A 1.53-mm2 Fully Integrated Wi-Fi 7 Front-End Module With 1.65-dB NF and 41.9% FBW in 0.25-μm GaAs p-HEMT Technology

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-04-08 DOI:10.1109/LMWT.2025.3553944

Pengfei Li;Kaixue Ma;Yudan Zhang;Jiaming Zhao;Hao Shi

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引用次数: 0

Abstract

This letter presents a highly integrated front-end module (FEM) in 0.25-

$\mu $

m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p-HEMT) process for Wi-Fi 7 applications. The design incorporates a wideband low-noise amplifier (LNA) with a feedforward capacitor structure (FCS) demonstrating 74% fractional bandwidth (FBW) and 1.65–2.3-dB noise figure, a three-stage nonlinear power amplifier (PA) with dynamic bias optimization achieving 16.2–16.5-dBm output power and 8.5% power-added efficiency (PAE) at −43-dB error vector magnitude (EVM) for 320-MHz 4096-QAM signals under digital predistortion (DPD) and a co-designed switch with absorptive electrostatic discharge (ESD) protection supporting human body model (HBM) 2 kV. The measured results show small-signal gains of 11.9–13.9 and 28.5–31.5 dB in receive (RX) and transmit (TX) modes across 4.9–7.5 GHz. Implemented in the smallest reported die area of

$0.9\times 1.7$

mm², this work demonstrates superior integration density and performance for next-generation Wi-Fi systems.

查看原文本刊更多论文

基于0.25 μm GaAs p-HEMT技术的1.53 mm2全集成Wi-Fi 7前端模块，NF为1.65 db， FBW为41.9%

本文介绍了一种用于Wi-Fi 7应用的高集成前端模块（FEM），采用0.25- $\mu $ m砷化镓（GaAs）伪晶高电子迁移率晶体管（p-HEMT）工艺。该设计集成了一个宽带低噪声放大器（LNA），具有前馈电容结构（FCS），具有74%分数带宽（FBW）和1.65 - 2.3 db噪声系数。在数字预失真（DPD）条件下，对320mhz 4096-QAM信号进行动态偏置优化，在- 43 db误差矢量幅度（EVM）下实现16.2 - 16.5 dbm输出功率和8.5%功率附加效率（PAE）的三级非线性功率放大器（PA），以及支持人体模型（HBM） 2kv的具有吸收静电放电（ESD）保护的共同设计开关。测量结果表明，在4.9-7.5 GHz的接收（RX）和发射（TX）模式下，小信号增益为11.9-13.9和28.5-31.5 dB。在最小的芯片面积（0.9 × 1.7 mm2）中实现，该工作为下一代Wi-Fi系统展示了卓越的集成密度和性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量