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A Broadband Digital Power Amplifier With 1-dB Psat Bandwidth of 5.5–9.5 GHz
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3509422
Hao Heng;Lanxin Jia;Zonglin Ye;Kailei Wang;Qian Xie;Jun Zhou;Zheng Wang
{"title":"A Broadband Digital Power Amplifier With 1-dB Psat Bandwidth of 5.5–9.5 GHz","authors":"Hao Heng;Lanxin Jia;Zonglin Ye;Kailei Wang;Qian Xie;Jun Zhou;Zheng Wang","doi":"10.1109/LMWT.2024.3509422","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3509422","url":null,"abstract":"This letter presents a broadband digital power amplifier (DPA) with a transformer-based dual-resonant transmission line (TDRT) matching network in 65-nm complementary metal-oxide-semiconductor (CMOS). The broadband TDRT is proposed and analyzed first, and then the design flow is introduced to achieve a broadband and compact output-matching network. With the contribution of TDRT, the proposed broadband DPA delivers a saturated power of 21.2 dBm with drain efficiency of 37.6% at 7 GHz, and achieves a 1-dB bandwidth of 5.5–9.5 GHz with a fractional bandwidth of 53.3%, whose drain efficiency is 27.7%–37.6% in this frequency range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475169
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3475169","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475169","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779387","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475171
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3475171","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475171","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779386","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Gradual-Width High-Q Self-Resonant Coil Based on Coplanar Waveguide
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3506987
Zixuan Yi;Kaiyu Yang;Xue-Xia Yang;Meiling Li;Dan Zeng
{"title":"A Gradual-Width High-Q Self-Resonant Coil Based on Coplanar Waveguide","authors":"Zixuan Yi;Kaiyu Yang;Xue-Xia Yang;Meiling Li;Dan Zeng","doi":"10.1109/LMWT.2024.3506987","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3506987","url":null,"abstract":"Self-resonant (SR) coils with high quality factor Q play a critical role for wireless energy transmission systems. In this article, a new single-layered spiral SR coil is introduced based on coplanar waveguide, which consists of two gradual-width spiral copper traces. Compared with traditional equal-width coils, the proposed coil increases the conductive area at specific location. This design significantly reduces loss during the current transmission, further improving Q of the coil. The simulation and experimental tests have confirmed that the proposed coil exhibits an outstanding Q of 436 at a resonant frequency of 13.58 MHz, which is the highest Q of the same frequency and size at present, and indicates a good application prospect for future inductive power transfer (IPT) transmission system.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"165-168"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling
IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3507045
Mohammad Sajid Nazir;Praveen Dwivedi;Ahtisham Pampori;Yun-Yueh Hsieh;Min-Li Chou;Yogesh Singh Chauhan
{"title":"Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling","authors":"Mohammad Sajid Nazir;Praveen Dwivedi;Ahtisham Pampori;Yun-Yueh Hsieh;Min-Li Chou;Yogesh Singh Chauhan","doi":"10.1109/LMWT.2024.3507045","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507045","url":null,"abstract":"This letter presents a comprehensive performance analysis and both linear and nonlinear modeling of dual-gate gallium nitride (GaN)-on-silicon (Si) depletion mode high electron mobility transistor (HEMT) devices across various switch topologies. We evaluate large-signal behavior to assess power handling capabilities in three configurations: series, shunt, and single-pole single-throw (SPST) at 6.5 GHz. For the SPST switch at 500 MHz, measurements reveal an <sc>on</small>-resistance (<inline-formula> <tex-math>$R_{text {on}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math>$2.7~Omega {cdot }text {mm}$ </tex-math></inline-formula>, <sc>off</small>-capacitance (<inline-formula> <tex-math>$C_{text {off}}$ </tex-math></inline-formula>) of 53.3 fF, peak insertion loss (IL) of 0.6 dB, and isolation (ISO) of 53.3 dB. These metrics are also evaluated across six different peripheries, ranging from NF<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> W =400 to <inline-formula> <tex-math>$6400~mu $ </tex-math></inline-formula> m. In addition, we introduce and validate a surface potential-based modeling framework for dual-gate RF GaN HEMTs using <sc>on</small>-wafer dc measurements, common-gate S-parameters, and large-signal measurements. Furthermore, we explore the potential single-pole-double-throw (SPDT) design by utilizing SPST switch S2P files in conjunction with model results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"221-224"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Generalized Design Approach for Asymmetric Coupled Line Couplers With Arbitrary Terminal Real Impedances and Arbitrary Power Division Ratio
IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3488738
Yan Zhang;Bin XIa;Jun-Fa Mao
{"title":"A Generalized Design Approach for Asymmetric Coupled Line Couplers With Arbitrary Terminal Real Impedances and Arbitrary Power Division Ratio","authors":"Yan Zhang;Bin XIa;Jun-Fa Mao","doi":"10.1109/LMWT.2024.3488738","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3488738","url":null,"abstract":"The introduction of asymmetric coupled lines (ACLs) features directional couplers with advantages such as great design flexibility, broadband, impedance transformation, and compact structure. This letter innovatively proposes a generalized design methodology for ACL couplers with arbitrary terminal real impedance and power division ratio (<inline-formula> <tex-math>$r_{p}$ </tex-math></inline-formula>). Using the decoupled branch-line model of ACLs, design equations between terminal real impedances, image impedances, and <inline-formula> <tex-math>$r_{p}$ </tex-math></inline-formula> are provided, unifying the analysis of branch-line hybrids and coupled line couplers. For verification, three coupled line couplers with <inline-formula> <tex-math>$r_{p}$ </tex-math></inline-formula> of 10 dB, 20 dB, and 30 dB, and fractional bandwidths of 48%, 38.5%, and 41.5%, respectively, were implemented.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"157-160"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave Sensor Array Based on Differential Mode Detection Strategy
IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3505961
Leijun Xu;Fanfan Li;Shengqi Zhang;Xue Bai;Qiang Wang;Jianfeng Chen
{"title":"Microwave Sensor Array Based on Differential Mode Detection Strategy","authors":"Leijun Xu;Fanfan Li;Shengqi Zhang;Xue Bai;Qiang Wang;Jianfeng Chen","doi":"10.1109/LMWT.2024.3505961","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3505961","url":null,"abstract":"A novel microwave sensor array utilizing a differential-mode detection strategy is introduced for localized material defect detection. Two types of modified split-ring resonators (SRRs) with unloaded Q-factor above 437 and 290, respectively, are utilized to construct the basic differential sensing elements. By arranging these elements with different sizes, a sensor array can be realized. Since the distinct resonant frequency of each element, multiple transmission zeros are included in the working range. Each resonance zero corresponds to an independent region of the material under test (MUT). Any local defect will cause a split in the corresponding resonant frequency. Therefore, detection results can be obtained simply by observing the split points in the resonance spectrum, eliminating the need for further calibration. This letter presents the coupling mechanisms of the proposed two basic sensing units and the operating principle of the proposed sensor array. A prototype operating from 2.4 to 4.6 GHz with five independent differential units has been designed and fabricated. Three different samples with local defects were used for validation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Miniaturized DC-110-GHz Attenuator Using Inductive π-Type Topology in 0.13-μm CMOS SOI
IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3507180
Nengxu Zhu;Jinxin Li;Yiting Zhang;Zhen Yang;Fanyi Meng
{"title":"A Miniaturized DC-110-GHz Attenuator Using Inductive π-Type Topology in 0.13-μm CMOS SOI","authors":"Nengxu Zhu;Jinxin Li;Yiting Zhang;Zhen Yang;Fanyi Meng","doi":"10.1109/LMWT.2024.3507180","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507180","url":null,"abstract":"This letter presents an ultrawideband miniaturized attenuator based on an inductive <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type topology. The proposed topology absorbs the parasitic capacitance as a part of the designed network and avoids using bulky interstage inductors for matching. Extended operational bandwidths are obtained in both reference and attenuation states for each attenuation cell. Fabricated with a high-performance 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m CMOS silicon on insulator (SOI) process, the four-bit attenuator achieves an insertion loss (IL) of 0.8–2.1 dB and an rms amplitude/phase error of <0.36 dB/5.4° over the dc-110 GHz. Its core area is only 0.0034 mm2, making it the smallest reported ultrawideband attenuator to date.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"153-156"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reconfigurable True-Time-Delay Phase Shifter Using Defected Ground Structure With Loaded Stubs
IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3506923
Yang Xu;He Zhu;Y. Jay Guo
{"title":"Reconfigurable True-Time-Delay Phase Shifter Using Defected Ground Structure With Loaded Stubs","authors":"Yang Xu;He Zhu;Y. Jay Guo","doi":"10.1109/LMWT.2024.3506923","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3506923","url":null,"abstract":"This letter presents a novel and high-performance reconfigurable true-time-delay (TTD) phase shifter. A compact dumbbell-shaped defected ground structure (DGS) is introduced to achieve a certain amount of TTD phase shift and low-transmission insertion loss. The p-i-n diode is used to control the on and off modes of the DGS unit. To enhance the impedance matching in both on and off modes, additional matching circuits are designed using microstrip stubs. Moreover, to realize a larger phase shift value, a six-unit DGS-reconfigurable TTD phase shifter is reported. The result reveals that the operating bandwidth ranges from 0.5 to 2.5 GHz, with a maximum phase shift of 120° and an insertion loss of less than 1 dB across the entire bandwidth. A prototype is simulated, fabricated, and successfully measured, and the measured results show excellent agreement with the simulation ones.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"161-164"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor 采用部分耦合变压器和大晶体管的w波段宽带CMOS LNA
IEEE microwave and wireless technology letters Pub Date : 2024-11-26 DOI: 10.1109/LMWT.2024.3499322
Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim
{"title":"W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor","authors":"Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim","doi":"10.1109/LMWT.2024.3499322","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3499322","url":null,"abstract":"This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"83-86"},"PeriodicalIF":0.0,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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