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High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network 基于阻抗调节网络的增强动态功率范围的高效宽带射频整流器
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3523763
Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang
{"title":"High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network","authors":"Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang","doi":"10.1109/LMWT.2024.3523763","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3523763","url":null,"abstract":"A high-efficiency rectifier designed to operate across a broad range of frequencies and power levels is proposed in this letter. The rectifier features a dual-branch impedance regulation network (IRN), two subrectifiers, and a load resistor. The IRN is used to construct specific impedance relationship between the upper and lower branches at different frequencies and power levels, demonstrating good matching performance across a wide bandwidth and dynamic power range (DPR). Theoretical analysis is carried out, and a prototype is implemented, fabricated, and measured for verification. At 1.8 GHz, the optimal efficiency is found over 70% at an input power level of 8 dBm. The frequency range of the prototype is from 1.4 to 2.5 GHz (beyond 70% of the optimal efficiency), and the calculated DPR of the prototype is 18 dB (from −5 to 13 dBm). The total size is <inline-formula> <tex-math>$0.22~lambda _{text {c}} times 0.24~lambda _{text {c}}$ </tex-math></inline-formula> (at 2 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"306-309"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning 基于强化学习的宽带微带到微带垂直过渡像素结构设计
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3519808
Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning
{"title":"Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning","authors":"Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning","doi":"10.1109/LMWT.2024.3519808","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519808","url":null,"abstract":"This article proposes a microstrip-to-microstrip (MS-to-MS) vertical transition with pixel structures and then proposes a knowledge-assisted proximal policy optimization (PPO), which is a reinforcement learning (RL) for the design of this transition. The transition requires fully connected structures and a novel mechanism to generate the pixel structures with fully connected shape is proposed and incorporated into PPO. The proposed method is compared with the particle swarm optimization (PSO) and the genetic algorithm (GA) and demonstrates benefits in improving design efficiency. The designed MS-to-MS transition is fabricated using the PCB process. Measurement results indicate that the designed MS-to-MS vertical transition operates in the band from 3.4 to 14.8 GHz with low insertion loss.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"274-277"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS 具有SiGe BiCMOS谐波抑制增强的d波段×8倍频器
IEEE microwave and wireless technology letters Pub Date : 2025-01-07 DOI: 10.1109/LMWT.2024.3515486
Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng
{"title":"A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS","authors":"Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng","doi":"10.1109/LMWT.2024.3515486","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515486","url":null,"abstract":"In this letter, a D-band frequency octupler (<inline-formula> <tex-math>$times 8$ </tex-math></inline-formula>) with high harmonic suppression is presented in a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe BiCMOS technology. To enhance the suppression of even harmonics among high harmonics, we have implemented and refined a waveform shaping technique that effectively elevates the second harmonic while suppressing the fourth, sixth, and higher even harmonics. Additionally, the transformer-based bandpass filters (BPFs) are integrated into the design of the <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier to enhance the suppression of nontarget frequency signals without compromising power consumption. To validate our proposed concept, a D-band <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier operating at 114.5–140 GHz is manufactured in a SiGe process. The circuit achieved an output power of −2.5 dBm with an input power of −2 dBm. Within the 3-dB bandwidth, the suppression of various harmonics exceeded 28 dBc and with the maximum suppression exceeding 38 dBc. The chip consumed 125 mW of power and occupied an area of <inline-formula> <tex-math>$0.63times 1.2$ </tex-math></inline-formula> mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"314-317"},"PeriodicalIF":0.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT 微波WPT用AlGaN/GaN GADs的2.4 GHz高效整流特性
IEEE microwave and wireless technology letters Pub Date : 2025-01-06 DOI: 10.1109/LMWT.2024.3522057
Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima
{"title":"High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT","authors":"Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima","doi":"10.1109/LMWT.2024.3522057","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522057","url":null,"abstract":"We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"310-313"},"PeriodicalIF":0.0,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies 毫米波频率下晶圆上器件最佳间距技术
IEEE microwave and wireless technology letters Pub Date : 2025-01-03 DOI: 10.1109/LMWT.2024.3522810
Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni
{"title":"A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies","authors":"Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni","doi":"10.1109/LMWT.2024.3522810","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522810","url":null,"abstract":"In this letter, we present a technique to determine efficient placement of nearby structures to the device-under-test (DUT) based on the DUT’s impedance, which is overlooked in the current layout guidelines. This technique involves sweeping both the impedance of the DUT and the spatial location of the nearby structure to create a map where the structure can be placed that would simultaneously minimize coupling to the DUT as well as the space between devices. The simulations were validated up to 110 GHz using gallium nitride (GaN) high-electron-mobility transistor (HEMT) measurements with and without a nearby line.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"370-373"},"PeriodicalIF":0.0,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method 显隐杂交间断伽辽金时域法中TF/SF源和网格比例的重要应用
IEEE microwave and wireless technology letters Pub Date : 2025-01-01 DOI: 10.1109/LMWT.2024.3521962
Xing Li;Li Xu;Li Liao;Bin Li
{"title":"Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method","authors":"Xing Li;Li Xu;Li Liao;Bin Li","doi":"10.1109/LMWT.2024.3521962","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521962","url":null,"abstract":"Based on our previous research on the explicit-implicit hybridizable discontinuous Galerkin time-domain (ex-imHDGTD) method, this letter gives two important applications in time-domain multiscale electromagnetics. The first is that the different ratios of both coarse and refined meshes are discussed, which shows that grid division strategy has a significant effect on the performance of ex-imHDGTD. The second is that a total-field/scattered-field (TF/SF) method is derived to impose the excitation on interfaces instead of boundary faces. Compared with the traditional hybridizable discontinuous Galerkin (HDG) method, the introduction of TF/SF changes the formulations of both local and global linear systems. Once applying this TF/SF in ex-imHDGTD, it is very easy for 3-D waveguide problems to obtain the transmitted and reflected waves. Note that this is the first time the TF/SF is used in the ex-imHDGTD method. Numerical results show that the proposed applications are feasible due to higher computational performances.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"262-265"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reflectionless Substrate Loaded Waveguide Bandstop Filter 无反射衬底负载波导带阻滤波器
IEEE microwave and wireless technology letters Pub Date : 2024-12-31 DOI: 10.1109/LMWT.2024.3517617
Boyoung Lee;Jongheun Lee;Juseop Lee
{"title":"Reflectionless Substrate Loaded Waveguide Bandstop Filter","authors":"Boyoung Lee;Jongheun Lee;Juseop Lee","doi":"10.1109/LMWT.2024.3517617","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517617","url":null,"abstract":"We present a new waveguide structure featuring reflectionless bandstop filtering and its design method. The reflectionless bandstop filtering is achieved simply by putting a substrate containing microstrip resonators on the bottom surface of a standard rectangular waveguide structure. Hence, whenever needed, a bandstop filtering functionality can be readily added without any structural change in an existing waveguide-based low-power wireless communications system. To verify the proposed structure and design method, reflectionless bandstop filters with one and three attenuation poles were designed, assembled, and evaluated through measurements.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"278-281"},"PeriodicalIF":0.0,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetrically Split-Cylinder Resonator With Air Gap for Measuring the Complex Permittivity of Film on a Substrate 用于测量衬底上薄膜复介电常数的气隙非对称裂柱谐振器
IEEE microwave and wireless technology letters Pub Date : 2024-12-31 DOI: 10.1109/LMWT.2024.3522129
Chengyong Yu;Xuan Ran;Yunpeng Zhang;Zhuoyue Zhang;Chong Gao;Jiawei Long;Xue Niu;Hu Zheng;En Li
{"title":"Asymmetrically Split-Cylinder Resonator With Air Gap for Measuring the Complex Permittivity of Film on a Substrate","authors":"Chengyong Yu;Xuan Ran;Yunpeng Zhang;Zhuoyue Zhang;Chong Gao;Jiawei Long;Xue Niu;Hu Zheng;En Li","doi":"10.1109/LMWT.2024.3522129","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522129","url":null,"abstract":"In this letter, a simple but very effective theoretical analysis is presented for the first time to model an asymmetric split-cylinder resonator (SCR) formed by the loading of multilayer samples. The fringing field effects at the flange can be effectively corrected by equating the multilayer structure to a single one, thus allowing the permittivity of the thin film on a substrate in the asymmetric SCR to be accurately extracted using a simple model of a multilayer dielectric-filled closed cavity. The validity of the proposed method has been investigated both numerically and experimentally at 10–20 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"290-293"},"PeriodicalIF":0.0,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 6.5-GHz Power-Efficient Two-Stage Feedforward Self-Interference Cancellation Receiver 一种6.5 ghz节能两级前馈自干扰消除接收机
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3519758
Teng-Shen Yang;Yi-Chieh Chang;Liang-Hung Lu
{"title":"A 6.5-GHz Power-Efficient Two-Stage Feedforward Self-Interference Cancellation Receiver","authors":"Teng-Shen Yang;Yi-Chieh Chang;Liang-Hung Lu","doi":"10.1109/LMWT.2024.3519758","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519758","url":null,"abstract":"This letter presents a two-stage feedforward (FF) power-efficient self-interference cancellation (SIC) frequency-division duplex (FDD) receiver at the 6.5-GHz band for 5G deployment. The first stage employs a transformer-feedback low-noise amplifier (LNA) that effectively reduces additional noise sources from the subsequent SIC stage, resulting in a low noise figure (NF) and low power consumption. In the second stage, the SIC path includes two passive mixers and a baseband variable gain amplifier (VGA) to attenuate the strong interfering signal from the transmitter. In addition, a passive-mixer-like transmission gate (PML-TG) is incorporated to ensure the synchronization of timing alignment between the main receiver path and the SIC path. Fabricated in a 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m technology, this work demonstrates 25 dB of SIC at 200-MHz offset with a signal bandwidth of 160 MHz. The proposed circuit can operate at a transmitter interference level of up to 20 dBm while consuming only 23.8 mW of dc power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"249-252"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Wideband Right-Angle CPWG-to-Waveguide Transition for Ku-Band Applications ku波段应用的宽带直角cpwg -波导转换设计
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3518843
Hoyong Kim;Gyoungdeuk Kim;Jihaeng Cho;Kyoungyoul Park;Sangkil Kim
{"title":"Design of a Wideband Right-Angle CPWG-to-Waveguide Transition for Ku-Band Applications","authors":"Hoyong Kim;Gyoungdeuk Kim;Jihaeng Cho;Kyoungyoul Park;Sangkil Kim","doi":"10.1109/LMWT.2024.3518843","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3518843","url":null,"abstract":"This letter presents a novel wideband planar coplanar waveguide with ground (CPWG)-to-rectangular waveguide (RWG) transition designed for Ku-band applications. The architecture employs a stacked patch structure integrated with shorting via walls, which are pivotal for mode conversion. The design incorporates dual matching techniques—mode and impedance matching—to extend the bandwidth. Specifically, the cross-slot magnetic currents induce an E-field that aligns with the TE10 mode of the waveguide, while the matching elements effectively suppress the undesirable higher order TM11 mode resonance. The transition operates over a bandwidth of 10.5–15.8 GHz (<inline-formula> <tex-math>$Delta f =39.7$ </tex-math></inline-formula>%) with corresponding total insertion losses (ILs) maintained below 1.33 dB. The transition demonstrates an IL of up to 0.7 dB within its operational bandwidth.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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