IEEE microwave and wireless technology letters最新文献_第7页

Miniaturized Low-Loss and Wideband Diplexer With Mixed Stacked Inductors Using Dual-RDL TGV Technology 采用双rdl TGV技术的小型低损耗宽带混合堆叠电感双工器

IEEE microwave and wireless technology letters Pub Date : 2025-04-14 DOI: 10.1109/LMWT.2025.3556960

Qi Zhang;Yazi Cao;Shichang Chen;Gaofeng Wang

{"title":"Miniaturized Low-Loss and Wideband Diplexer With Mixed Stacked Inductors Using Dual-RDL TGV Technology","authors":"Qi Zhang;Yazi Cao;Shichang Chen;Gaofeng Wang","doi":"10.1109/LMWT.2025.3556960","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3556960","url":null,"abstract":"In this letter, a miniaturized low-loss and wideband diplexer with mixed stacked inductors is proposed using the Dual-redistribution layer (dual-RDL) glass-based advanced packaging technology. The mixed using the 3-D stacked high-<italic>Q inductors and 2-D planar gradient inductors is introduced in the proposed diplexer for low insertion loss and compact chip size. Furthermore, a modified circuit topology is presented, which can generate multiple transmission zeros (TZs) outside of the two passbands. The proposed diplexer is realized using through glass via (TGV) technology and measuring with ground-source–ground (GSG) probe. From the measured results, it can achieve an insertion loss of less than 0.85 and 0.62 dB, and the isolation is better than 21.5 dB in the two operating bands (0.25–0.95 GHz and 1.71–2.69GHz). In particular, the proposed diplexer can achieve the wideband performance, and the measured fractional bandwidth (FBW) of the two passbands is 116.7% and 44.5%. Also, this design occupies an area of <inline-formula> <tex-math>$1.6times 0.8$ </tex-math></inline-formula> mm. In comparison with the previously reported designs, the proposed diplexer shows the superior advantages of smaller size, wideband, and lower insertion loss. The simulation and measured results show good consistency.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"997-1000"},"PeriodicalIF":0.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 112-Gb/s PAM-4 Optical Receiver With Sub-1.9- μArms Noise and <4% THD for Linear-Drive Pluggable Optics 用于线性驱动可插拔光学器件的112gb /s PAM-4光接收器，噪声低于1.9 μArms, THD <4%

IEEE microwave and wireless technology letters Pub Date : 2025-04-14 DOI: 10.1109/LMWT.2025.3550180

Wei Chen;Minhao Li;Ming Zhong;Yuan Li;Ying Wu;Pisen Zhou;Patrick Yin Chiang

{"title":"A 112-Gb/s PAM-4 Optical Receiver With Sub-1.9- μArms Noise and <4% THD for Linear-Drive Pluggable Optics","authors":"Wei Chen;Minhao Li;Ming Zhong;Yuan Li;Ying Wu;Pisen Zhou;Patrick Yin Chiang","doi":"10.1109/LMWT.2025.3550180","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3550180","url":null,"abstract":"This letter presents a <inline-formula> <tex-math>$4times 112$ </tex-math></inline-formula> Gb/s optical receiver with low noise and high output swing for linear-drive pluggable optics (LPOs). The receiver is implemented in 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe-BiCMOS technology with <inline-formula> <tex-math>${f} _{text {T}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${f} _{text {MAX}} =260$ </tex-math></inline-formula>/350 GHz. An inductive shunt-feedback (ISFB) transimpedance stage (TIS) employing <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-topology LC network is positioned as an input stage of optical receiver. This design achieves a wide bandwidth (BW) and low noise simultaneously, despite large photograph diode (PD) and packaging parasitic capacitance. Two current-splitting variable gain amplifiers (VGAs) with continuous-time linear equalizer (CTLE) function cascaded after TIS. These VGAs feature high reliability, compensate for BW loss, and provide a gain control range of −12 dB<inline-formula> <tex-math>$sim +18$ </tex-math></inline-formula> dB, accommodating input current up to 2 mApp. The measurement results show that optical receiver provides a maximum O/E transimpedance gain (O/E.<inline-formula> <tex-math>${Z} _{text {T}}$ </tex-math></inline-formula>) of 73.8 dB<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> with O/E.BW beyond 35 GHz, an input-referred noise (IRN) current of <inline-formula> <tex-math>$1.9~mu $ </tex-math></inline-formula>Arms, and the total harmonic distortion (THD) <4%> <tex-math>$2times 10^{-4}$ </tex-math></inline-formula> with 56-Gbaud PAM-4 SSPRQ. The optical receiver achieves a power efficiency of 1.65-pJ/bit and occupies an area of <inline-formula> <tex-math>$3.14times 1.04$ </tex-math></inline-formula> mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1089-1092"},"PeriodicalIF":0.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Interleaved 1×8 Dual-Polarized L-Band Phased Array With Digital Transmit/Receive Beamforming Using RFSoC 基于RFSoC的交错1×8双极化l波段相控阵数字发射/接收波束形成

IEEE microwave and wireless technology letters Pub Date : 2025-04-14 DOI: 10.1109/LMWT.2025.3554001

Peizhuo Yang;Alessio Tornese;Gong Chen;Koen Mouthaan

引用次数: 0

28-GHz Body-Effect-Controlled CMOS Bidirectional Active Mixer 28 ghz体效应控制CMOS双向有源混频器

IEEE microwave and wireless technology letters Pub Date : 2025-04-14 DOI: 10.1109/LMWT.2025.3553825

Juhui Jeong;Junghwan Han

引用次数: 0

AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications 用于毫米波应用的具有GeN栅介质的AlN/GaN mis_hemt

IEEE microwave and wireless technology letters Pub Date : 2025-04-11 DOI: 10.1109/LMWT.2025.3553152

Jianchao Wang;Kaiyu Wang;Ruizhe Zhang;Xiaoqiang He;Sheng Zhang;Jiaqi Guo;Jiebin Niu;Yankui Li;Weichao Wu;Weijun Luo;Xiaojuan Chen;Sen Huang;Xinhua Wang;Ke Wei;Xinyu Liu

{"title":"AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications","authors":"Jianchao Wang;Kaiyu Wang;Ruizhe Zhang;Xiaoqiang He;Sheng Zhang;Jiaqi Guo;Jiebin Niu;Yankui Li;Weichao Wu;Weijun Luo;Xiaojuan Chen;Sen Huang;Xinhua Wang;Ke Wei;Xinyu Liu","doi":"10.1109/LMWT.2025.3553152","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553152","url":null,"abstract":"In this work, a high-performance AlN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with germanium nitride (GeN) as a gate dielectric was fabricated. The gate dielectric was deposited using thermal evaporation and nitridation methods to prevent interface damage and fixed charges caused by plasma growth or sputtering. With the developed nitride-GeN dielectric, the MIS devices exhibit excellent electrical characteristics, including a negligible hysteresis of 0.05 V, a four-order reduction in gate leakage current, and an enhanced gate swing voltage. For a 150-nm gate length, the device achieved a maximum drain current density of 2.03A/mm and an effective current-gain cutoff frequency/maximum oscillation frequency (<inline-formula> <tex-math>$f_{mathrm {T}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f_{mathrm {MAX}}$ </tex-math></inline-formula>) of 81/131 GHz. At 30 GHz, it delivered a remarkable power density of 3.9 W/mm at <inline-formula> <tex-math>$V_{mathrm {DS}} =12$ </tex-math></inline-formula> V in the CW mode. These promising results indicate that GeN could be a new and attractive gate dielectric option for AlN/GaN HEMTs functioning in the Ka-band frequency range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"896-899"},"PeriodicalIF":0.0,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 16.6-to-34.1 GHz Dual-Core Quad-Mode Oscillator Achieving 202.3 dBc/Hz FoMT in 65nm CMOS 在65nm CMOS中实现202.3 dBc/Hz fft的16.6- 34.1 GHz双核四模振荡器

IEEE microwave and wireless technology letters Pub Date : 2025-04-11 DOI: 10.1109/LMWT.2025.3556280

Xin Yu;Xiaolong Liu

引用次数: 0

DC-20 GHz Ultrawideband High Linearity Phased Array Switch dc - 20ghz超宽带高线性相控阵开关

IEEE microwave and wireless technology letters Pub Date : 2025-04-11 DOI: 10.1109/LMWT.2025.3553684

Mengqing Yan;Yongqing Leng;Xin Qiu;Xingli Cui;Jing Liu

引用次数: 0

A 66–160 GHz Broadband Frequency Multiplier Chain (×6) With High Harmonic Suppression 高谐波抑制的66 - 160ghz宽带倍频链(×6

IEEE microwave and wireless technology letters Pub Date : 2025-04-09 DOI: 10.1109/LMWT.2025.3556003

Zi'ang Xu;Zihan Zhang;Junjie Zhang;Xiaoyu Zhang;Guangbo Wang;Jian Guo

引用次数: 0

A W-Band Pseudo-Differential CMOS Switching Rectifier for Wireless Power Transfer 一种用于无线电力传输的w波段伪差分CMOS开关整流器

IEEE microwave and wireless technology letters Pub Date : 2025-04-09 DOI: 10.1109/LMWT.2025.3553959

Mengru Yang;Pingyang He;Dixian Zhao

引用次数: 0

50-Way W-Band All Waveguide Radial Combiner Design 50路w波段全波导径向合成器设计

IEEE microwave and wireless technology letters Pub Date : 2025-04-09 DOI: 10.1109/LMWT.2025.3554515

Mohamed M. Fahmi;Michael E. MacDonald;Aly E. Fathy;Mohamed D. Abouzahra

{"title":"50-Way W-Band All Waveguide Radial Combiner Design","authors":"Mohamed M. Fahmi;Michael E. MacDonald;Aly E. Fathy;Mohamed D. Abouzahra","doi":"10.1109/LMWT.2025.3554515","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3554515","url":null,"abstract":"This letter presents a novel and challenging design of a 50-way all-waveguide W-band radial combiner, utilizing WR10 ports for all connections. The novelty lies in its pioneering design and implementation of the radial combiner structure, while the challenges stem from the complexities associated with high-frequency design, manufacturing precision, and the integration of multiple waveguide sections. The design begins with a radial combiner featuring rectangular waveguide peripheral ports and a circular waveguide intermediate port operating in the TE01 mode, which is particularly advantageous due to its low loss, attributed to its field distribution with minimal surface current density. A mode transducer is designed to convert the intermediate circular waveguide TE01 mode to the dominant TE10 mode in the WR10 rectangular waveguide. This transducer is integrated with the radial combiner to produce a standard WR10 waveguide output. The design follows a modular approach, dividing the process into separate optimally designed blocks, which are then integrated to form the final structure. Mechanical considerations are crucial at such high frequencies, and all features, such as matching disks and bifurcations, are designed to require only simple mechanical tooling. The design is thoroughly discussed, and an experimental prototype was fabricated and tested, demonstrating good performance without the need for tuning.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"792-795"},"PeriodicalIF":0.0,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0