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A 5-GHz Fractional-N Reference-Sampling PLL With Voltage-Averaging Fractional Phase Detector Achieving an Integer-N-Level Phase Noise 带平均电压分数阶鉴相器的5 ghz分数阶参考采样锁相环实现整数n级相位噪声
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3557230
Yanlong Zhang;Xiaoyu Yang;Hong Liao;Yan Wang;Guohe Zhang;Li Geng
{"title":"A 5-GHz Fractional-N Reference-Sampling PLL With Voltage-Averaging Fractional Phase Detector Achieving an Integer-N-Level Phase Noise","authors":"Yanlong Zhang;Xiaoyu Yang;Hong Liao;Yan Wang;Guohe Zhang;Li Geng","doi":"10.1109/LMWT.2025.3557230","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557230","url":null,"abstract":"A fractional phase detector (PD) architecture that can significantly reduce the quantization error of a fractional-<italic>N</i> phase-locked loop (PLL) is presented. It achieves instantaneous fractional phase detection by spatial averaging in the voltage domain through an array of reference-sampling PD (RSPD) cells. With this fractional PD, a prototype 5-GHz fractional-<italic>N</i> RSPLL is implemented in a 65-nm CMOS process. Measurement results show that the in-band and out-of-band phase noises are reduced by 21 and 33 dB, respectively, leading to a significant reduction of the integrated rms jitter from 6.35 ps to 456 fs, almost the same as that at the integer-<italic>N</i> mode (442 fs).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1069-1072"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Broadband Active Dual-Component Magnetic Probe for Near-Field Measurement 一种用于近场测量的宽带有源双分量磁探头
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3556668
Rong Zhou;Hainan Bai;Lei Wang;Zhangming Zhu
{"title":"A Broadband Active Dual-Component Magnetic Probe for Near-Field Measurement","authors":"Rong Zhou;Hainan Bai;Lei Wang;Zhangming Zhu","doi":"10.1109/LMWT.2025.3556668","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3556668","url":null,"abstract":"This work first presents a broadband active dual-component magnetic probe with high sensitivity for near-field measurements. The proposed active magnetic probe is mainly composed of two orthogonal short-circuit loops as signal receiving part, a pair of strip lines as signal transmission part, two low-noise amplifiers (LNAs) as signal enhancement part, and a pair of subminiature version A (SMA) connectors as signal output part. Note that two orthogonal short-circuit loops are used to simultaneously sense two magnetic-field components in different directions and improve detection efficiency. Moreover, a pair of broadband LNAs are integrated into the probe to enhance detection sensitivity. Finally, in order to verify the effectiveness of the design, the proposed active magnetic probe is manufactured on a four-layer printed circuit board (PCB) and characterized by a near-field test system. Measurement results demonstrate that the proposed active magnetic probe can not only measure two orthogonal magnetic components simultaneously but also has high detection sensitivity and wide working bandwidth from 0.3 to 20 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1097-1100"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Diplexer With Wide Stopband Based on Stacked Dual-Mode and Single-Mode SIW Cavities 基于堆叠双模和单模SIW腔的宽阻带紧凑型双工器
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3562591
Ziyu Zhou;Gang Dong;Xinqing Lei;Zhangming Zhu
{"title":"Compact Diplexer With Wide Stopband Based on Stacked Dual-Mode and Single-Mode SIW Cavities","authors":"Ziyu Zhou;Gang Dong;Xinqing Lei;Zhangming Zhu","doi":"10.1109/LMWT.2025.3562591","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3562591","url":null,"abstract":"This letter proposes a compact diplexer with a wide stopband based on stacked substrate-integrated waveguide (SIW) cavities. By vertically stacking the common dual-mode resonator (DMR) with multiple single-mode resonators (SMRs), the design achieves flexible bandwidth control for both channels while maintaining compactness. The proposed diplexer achieves enhanced wide-stopband performance through strategic suppression of TE<sub>102</sub>, TE<sub>103</sub>/TE<sub>301</sub>, TE<sub>302</sub>, and TE<sub>303</sub> modes in SMRs. A third-order diplexer is fabricated with a size of <inline-formula> <tex-math>$1.02lambda _{g}^{2}$ </tex-math></inline-formula>, extending the stopband up to <inline-formula> <tex-math>$3.57~f_{1}$ </tex-math></inline-formula> with a better than 20-dB rejection level.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"977-980"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Substrate Integrated Waveguide Filtering Rat-Race Coupler Using Dual-Mode Composite Cavity 基于双模复合腔的基板集成波导滤波大鼠型耦合器
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3561729
Jianxing Zhuang;Jun Huang;Fang Zhu
{"title":"Substrate Integrated Waveguide Filtering Rat-Race Coupler Using Dual-Mode Composite Cavity","authors":"Jianxing Zhuang;Jun Huang;Fang Zhu","doi":"10.1109/LMWT.2025.3561729","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3561729","url":null,"abstract":"This letter presents a compact substrate integrated waveguide (SIW) filtering rat-race coupler based on a dual-mode composite cavity (DMCC) and stacked SIW cavities (SIWCs). The dual-mode characteristics of the DMCC are systematically analyzed to guide the circuit realization. By incorporating two coupling windows between the DMCC and stacked SIWCs, the internal couplings for the TE<sub>101</sub> and folded TE<sub>101</sub> (FTE<sub>101</sub>) modes can be independently controlled, significantly reducing the design complexity of the SIW filtering rat-race coupler. To validate the design, a second-order SIW filtering rat-race coupler is designed, fabricated, and measured. The measured results agree well with the simulated ones.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1001-1004"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Transmission Line-Based Notch Structure With a Wide Range of Variation Notch Bandwidth 一种基于传输线的宽变化陷波带宽的陷波结构
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3560659
Song-Zhao Zhou;Zhi-Yuan Zong;Wen Wu;Da-Gang Fang
{"title":"A Transmission Line-Based Notch Structure With a Wide Range of Variation Notch Bandwidth","authors":"Song-Zhao Zhou;Zhi-Yuan Zong;Wen Wu;Da-Gang Fang","doi":"10.1109/LMWT.2025.3560659","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3560659","url":null,"abstract":"In this letter, a novel method is proposed to realize a wide range of variation notch bandwidth in a notch structure by changing the height of the mushroom-like resonator that is embedded in the dielectric layer of the transmission line (TL). The resonator consists of narrow strips and rectangular patches and is connected to the ground through metal vias, and a detailed analysis of its working mechanism and key parameters is provided based on the equivalent circuit. The <italic>Q</i> value of the resonant circuit shows that the notch bandwidth is relevant to the equivalent capacitance ratio, which explains that the notch bandwidth can be flexibly adjusted by adjusting the height of the resonator. Its applicability to other TLs is also discussed. Furthermore, the notch structure can be applied to various antennas without affecting their radiation characteristics. Three validation structures are fabricated: narrowband and broadband notched microstrip lines, and a dual-band notched antenna with low cross-polarization, all the measured results show effects consistent with simulation predictions.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"981-984"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Agile Additively Manufactured 5G/mm-Wave RF Front-End With Multilayer Conformality and Printed RF VIAs for Ultrawideband and Miniaturized Systems 一种敏捷增材制造的5G/毫米波射频前端，具有多层一致性和用于超宽带和小型化系统的印刷RF过孔
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3558479
Hani Al Jamal;Manos M. Tentzeris
{"title":"An Agile Additively Manufactured 5G/mm-Wave RF Front-End With Multilayer Conformality and Printed RF VIAs for Ultrawideband and Miniaturized Systems","authors":"Hani Al Jamal;Manos M. Tentzeris","doi":"10.1109/LMWT.2025.3558479","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3558479","url":null,"abstract":"This article presents the first fully additively manufactured (AM) multilayered RF front-end (RF-FE) for mm-wave frequencies (20–30 GHz), integrating active devices, passive printed structures, and RF signals routed on both outer layers. The system features flexible inkjet- and screen-printed RF vertical interconnects (VIAs) with insertion loss between 0.58 and 1.64 dB and minimal bending-induced degradation. Its multilayer architecture enables significant miniaturization, ideal for compact, low-cost, and sustainable mm-wave modules in wearable devices, autonomous UAVs, and smart cities. The design achieves inkjet-printed feature sizes down to <inline-formula> <tex-math>$60,mu $ </tex-math></inline-formula>m, critical for mm-wave filters, and incorporates a monopole antenna array with up to 9-dBi gain, demonstrating robust planar and conformal performance. Leveraging AM, this work establishes a pathway for miniaturized, flexible, and cost-effective RF systems, addressing key challenges in advanced communication and sensing applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"808-811"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 203-to-250GHz Staggered-Tuning Amplifier in 0.13-μm SiGe Technology 基于0.13 μm SiGe技术的203- 250ghz交错调谐放大器
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3560671
Xin Zhang;Zhiheng Liu;Fanyi Meng
{"title":"A 203-to-250GHz Staggered-Tuning Amplifier in 0.13-μm SiGe Technology","authors":"Xin Zhang;Zhiheng Liu;Fanyi Meng","doi":"10.1109/LMWT.2025.3560671","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3560671","url":null,"abstract":"An ultra-wideband four-stage 220GHz amplifier in a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe BiCMOS technology is proposed in this letter. The cascode topology is deployed as a unit amplifier to provide sufficient power gain. To broaden the bandwidth, the staggered-tuning model for the cascode amplifier is studied, analyzed, and applied in the amplifier design. The fabricated circuit achieves a peak gain of 15.5 dB at 210GHz, a 3-dB bandwidth of 47GHz, an output <inline-formula> <tex-math>$P_{text {1 dB}}$ </tex-math></inline-formula> of −9.7 dBm at 220GHz. The amplifier occupies a compact area of 0.154 mm<sup>2</sup>. The dc power consumption is 20.4mW at 2.4 V supply voltage.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1049-1052"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 11-pA/Hz 5-Gb/s Inductorless Optical Receiver for High-Density Parallel Interface Application 一种用于高密度并行接口的11pa /Hz 5gb /s无电感光接收机
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3553931
Wentao Zhong;Ang Hu;Jingsong Cui;Qin Hu;Dongsheng Liu;Xuecheng Zou
{"title":"A 11-pA/Hz 5-Gb/s Inductorless Optical Receiver for High-Density Parallel Interface Application","authors":"Wentao Zhong;Ang Hu;Jingsong Cui;Qin Hu;Dongsheng Liu;Xuecheng Zou","doi":"10.1109/LMWT.2025.3553931","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553931","url":null,"abstract":"This letter presents a 5-Gb/s inductorless optical receiver (ORX) used for high-density parallel interface application. In order to reduce the active area of single channel and mitigate the magnetic coupling effect, the on-chip inductor is limit-used. By adopting a regulated cascode (RGC) transimpedance amplifier (TIA) and an on-chip low dropout (LDO) regulator, the high-frequency noise and off-chip noise are reduced. A limiting amplifier (LA) utilizing the second-order amplifier cells with active feedback is employed, which can perform peaking characteristics at high frequencies and increase the gain-bandwidth (GBW) product. Implemented in 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m CMOS process, the ORX achieves a measured transimpedance gain of 74 dB <inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>, a −3-dB bandwidth of 3.65 GHz, and an average input-referred current noise density of 11 pA/<inline-formula> <tex-math>$sqrt {mathrm {Hz}} $ </tex-math></inline-formula>. The total area occupied by the ORX is 2.686 mm<sup>2</sup>, with a power consumption of 112.9 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1085-1088"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cognitive Broyden-Based Input Space Mapping for Design Optimization 基于认知broyden的设计优化输入空间映射
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3560909
José E. Rayas-Sánchez
{"title":"Cognitive Broyden-Based Input Space Mapping for Design Optimization","authors":"José E. Rayas-Sánchez","doi":"10.1109/LMWT.2025.3560909","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3560909","url":null,"abstract":"Cognition-driven design of RF and microwave circuits is an emerging and promising approach to efficient design optimization of computationally expensive fine models. Existing techniques for cognition-driven design have been developed for optimizing microwave filters without exploiting traditional coarse model representations, e.g., equivalent circuits. Instead, intermediate feature-space parameters have been used to establish other types of mappings in the design process. In this letter, a cognitive space mapping (SM) technique that fully exploits traditional coarse models is proposed for the first time. The proposed cognitive SM approach exploits a previous cognition-driven parameter extraction (PE) formulation at each SM iteration. This cognitive SM technique follows an algorithmic structure that is an extension of that one used by the Broyden-based input SM, better known as aggressive SM (ASM). A synthetic benchmark example illustrates the performance improvement of the proposed cognitive SM versus ASM.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"760-763"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications 手机用InGaP/GaAs HBT工艺中阻抗转换比优化的宽带类doherty负载调制平衡放大器
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3560289
Byeongcheol Yoon;Sooji Bae;Seungju Lee;Sungwoon Hwang;Jooyoung Jeon;Junghyun Kim
{"title":"A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications","authors":"Byeongcheol Yoon;Sooji Bae;Seungju Lee;Sungwoon Hwang;Jooyoung Jeon;Junghyun Kim","doi":"10.1109/LMWT.2025.3560289","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3560289","url":null,"abstract":"This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (<inline-formula> <tex-math>$Z_{0}$ </tex-math></inline-formula>) and matching network (MN). A prototype LMBA attains measured saturation power (<inline-formula> <tex-math>$P_{text {SAT}}$ </tex-math></inline-formula>), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2–5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (<inline-formula> <tex-math>$P_{text {avg}}$ </tex-math></inline-formula>) with 37.7% average CE (CE<sub>avg</sub>) at an adjacent channel leakage ratio (ACLR) of −33 dBc.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"848-851"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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