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IEEE microwave and wireless technology letters最新文献

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A Lightweight Coefficient Update Method for Linearization of Power Amplifiers With Frequent Power Variation 功率变化频繁的功率放大器线性化的轻量级系数更新方法
IEEE microwave and wireless technology letters Pub Date : 2024-10-14 DOI: 10.1109/LMWT.2024.3472110
Zixuan Long;Ying Liu;Zeqiang Ning;Shihai Shao;Qiang Xu;Wanzhi Ma;Youxi Tang
{"title":"A Lightweight Coefficient Update Method for Linearization of Power Amplifiers With Frequent Power Variation","authors":"Zixuan Long;Ying Liu;Zeqiang Ning;Shihai Shao;Qiang Xu;Wanzhi Ma;Youxi Tang","doi":"10.1109/LMWT.2024.3472110","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3472110","url":null,"abstract":"Transmitting power levels of transmitters in modern communication usually change frequently, which complicates the digital predistortion (DPD) linearization of radio frequency (RF) power amplifiers (PAs). By studying the nonlinear behavior of the PAs, we find that there is a certain relationship between the DPD coefficients at different power levels. Therefore, this letter proposes an improved DPD model that uses one compensation factor to accommodate for PA nonlinear behaviors at different power levels. When the PA output power changes, only the compensation factor is recalculated through a simple estimation process. Therefore, the proposed DPD model is suitable for fast updates of model coefficients in scenarios where transmitting powers change frequently. Experimental results demonstrate the effectiveness of the proposed model. Specifically, the proposed model is enough to maintain a −50 dBc adjacent channel leakage ratio (ACLR) when the PA power changes.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1383-1386"},"PeriodicalIF":0.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Cryogenic 2.9–8.6-GHz LNA With Bandwidth Extension Technique for Quantum Applications 用于量子应用的低温2.9 - 8.6 ghz窄带扩展技术
IEEE microwave and wireless technology letters Pub Date : 2024-10-11 DOI: 10.1109/LMWT.2024.3471888
Teng-Shen Yang;I-Hsun Chen;Liang-Hung Lu
{"title":"A Cryogenic 2.9–8.6-GHz LNA With Bandwidth Extension Technique for Quantum Applications","authors":"Teng-Shen Yang;I-Hsun Chen;Liang-Hung Lu","doi":"10.1109/LMWT.2024.3471888","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3471888","url":null,"abstract":"This work presents a wideband and power-efficient cryogenic low-noise amplifier (LNA) for quantum computing. Based on the inductive source-degeneration topology, a lossy output-feedback transformer (OFT) generates two slightly damping conjugate poles, which broaden the 3-dB bandwidth at higher frequencies and maintain low-noise performance. In addition, an input-matching transformer (IMT) is adopted to guarantee the input-matching bandwidth. Fabricated in a 0.18-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m CMOS technology, the proposed LNA exhibits a peak gain of 9.24 dB with a 3-dB bandwidth ranging from 2.9 to 7.8 GHz at room temperature (RT) (300 K). The minimum measured noise figure (NF) is 2.24 dB. At cryogenic temperature (CT) (4 K), the LNA shows a measured peak gain of 14.23 dB with a 3-dB bandwidth from 2.9 to 8.6 GHz, and the minimum measured NF is 0.6 dB. The power consumption of the LNA is 10 mW. To the best of the authors’ knowledge, the proposed LNA offers the widest bandwidth at 4 K among CMOS LNAs with power consumption below 10 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1363-1366"},"PeriodicalIF":0.0,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect 含扭结效应的GaN hemt可扩展大信号建模
IEEE microwave and wireless technology letters Pub Date : 2024-10-09 DOI: 10.1109/LMWT.2024.3471874
Jing Bai;Ao Zhang;Jianjun Gao
{"title":"Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect","authors":"Jing Bai;Ao Zhang;Jianjun Gao","doi":"10.1109/LMWT.2024.3471874","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3471874","url":null,"abstract":"An improved scalable large-signal model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEHEMT model is proposed. The derived DC model can accurately predict the current-voltage behavior including the kink effect over a wide range of bias points by introducing the parameter \u0000<inline-formula> <tex-math>$V_{textrm {kink}}$ </tex-math></inline-formula>\u0000 and new equations using fitting parameters. To ensure the scalability of the model, the scaling rules are modified. The proposed model has been validated by comparing the measured and modeled DC I–V characteristics and multibias scattering parameters (S-parameters) up to 40 GHz for GaN HEMTs with different gate widths including \u0000<inline-formula> <tex-math>$2times 25~mu $ </tex-math></inline-formula>\u0000m, \u0000<inline-formula> <tex-math>$2times 50~mu $ </tex-math></inline-formula>\u0000m, \u0000<inline-formula> <tex-math>$2times 75~mu $ </tex-math></inline-formula>\u0000m, and \u0000<inline-formula> <tex-math>$2times 100~mu $ </tex-math></inline-formula>\u0000m gate width (number of gate fingers \u0000<inline-formula> <tex-math>$times $ </tex-math></inline-formula>\u0000 unit gate width).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1339-1342"},"PeriodicalIF":0.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 0.22 mm² 0.5~4 GHz Active Single-Sideband Time Modulator With a Single Digital-Sequence Control 带单数字序列控制的0.22 mm²0.5~ 4ghz有源单边带时间调制器
IEEE microwave and wireless technology letters Pub Date : 2024-10-09 DOI: 10.1109/LMWT.2024.3471805
Guoxiao Cheng;Tao Wang;Zhihao Li;Jin-Dong Zhang;Qiaoyu Chen;Wen Wu
{"title":"A 0.22 mm² 0.5~4 GHz Active Single-Sideband Time Modulator With a Single Digital-Sequence Control","authors":"Guoxiao Cheng;Tao Wang;Zhihao Li;Jin-Dong Zhang;Qiaoyu Chen;Wen Wu","doi":"10.1109/LMWT.2024.3471805","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3471805","url":null,"abstract":"This letter proposes a novel single-sideband time modulator (STM) that uses a periodically controlled 4-bit active vector modulator with regularly controlled gate widths. Timing sequences for control bits are generated from a single digital sequence using a \u0000<inline-formula> <tex-math>$div 16$ </tex-math></inline-formula>\u0000 frequency divider. By precisely delaying the single digital sequence, the proposed active STM achieves high-precision and frequency-independent phase-shifting performance while enhancing the sideband suppression ratio (SSR) without raising insertion loss. Fabricated in 0.13-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000 m CMOS technology, it occupies a compact area of \u0000<inline-formula> <tex-math>$1.1times 0.2$ </tex-math></inline-formula>\u0000 mm2. Measured results show an equivalent 10-bit phase resolution, root mean square (rms) phase error of 0.13°~0.36°, and rms gain error of 0.05~0.31 dB in a frequency range of 0.5~4.0 GHz. The measured SSR is less than −23.5 dBc, and the instantaneous bandwidth is expanded to \u0000<inline-formula> <tex-math>$16~f_{text {P}}$ </tex-math></inline-formula>\u0000.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1375-1378"},"PeriodicalIF":0.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors 电气和电子工程师学会《微波与无线技术通讯》作者须知
IEEE microwave and wireless technology letters Pub Date : 2024-10-08 DOI: 10.1109/LMWT.2024.3463375
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3463375","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3463375","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709629","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Open Access Publishing IEEE 开放存取出版
IEEE microwave and wireless technology letters Pub Date : 2024-10-08 DOI: 10.1109/LMWT.2024.3463373
{"title":"IEEE Open Access Publishing","authors":"","doi":"10.1109/LMWT.2024.3463373","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3463373","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"1218-1218"},"PeriodicalIF":0.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709627","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication 电气和电子工程师学会《微波与无线技术通讯》出版物
IEEE microwave and wireless technology letters Pub Date : 2024-10-08 DOI: 10.1109/LMWT.2024.3463371
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3463371","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3463371","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709628","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Compact and Low-Complexity Harmonic-Controlled Dual-Band Rectifier for Wireless Power Transfer 小型低复杂度谐波双频无线电力传输整流器的设计
IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3466920
Danh Manh Nguyen;Dang-An Nguyen;Chulhun Seo
{"title":"Design of Compact and Low-Complexity Harmonic-Controlled Dual-Band Rectifier for Wireless Power Transfer","authors":"Danh Manh Nguyen;Dang-An Nguyen;Chulhun Seo","doi":"10.1109/LMWT.2024.3466920","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3466920","url":null,"abstract":"This letter presents a novel methodology for realizing a high-efficiency harmonic-controlled dual-band (dB) rectifier with compactness and low complexity. Specifically, the DB fundamental impedance matching network and the DB harmonic suppression filter are co-designed within a four-transmission lines (TLINs) structure, which reduces the design complexity and the overall circuit size resulting in low insertion loss for power conversion efficiency (PCE) maximization. A prototype is implemented using a Schottky diode model BAT15-03W at two separate frequencies of 2.45 and 5.8 GHz for verification. The measurement results show high peak PCE of 77.8% and 73.9% recorded at 2.34 and 5.62 GHz, respectively, while the realized rectifier has a small size of \u0000<inline-formula> <tex-math>$39times 21$ </tex-math></inline-formula>\u0000 mm. Compared to other state-of-the-art designs, the proposed rectifier exhibits advantages in terms of high PCE and compactness.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1395-1398"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Accuracy Indoor Ranging Using Microwave OFDM Signals 利用微波OFDM信号进行高精度室内测距
IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3468230
Mehmet Yazgan;Hüseyin Arslan;Stavros Vakalis
{"title":"High-Accuracy Indoor Ranging Using Microwave OFDM Signals","authors":"Mehmet Yazgan;Hüseyin Arslan;Stavros Vakalis","doi":"10.1109/LMWT.2024.3468230","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3468230","url":null,"abstract":"High-accuracy wireless ranging and positioning becomes necessary in many applications, and while many waveforms promise high accuracy, their performance in cluttered environments is not optimal. This article confers about the potential of high-accuracy wireless ranging using orthogonal frequency-division multiplexing (OFDM) signals. The excellent correlation properties of OFDM signals for high-accuracy ranging in real-life environments are discussed and the Cramer-Rao lower bound (CRLB) is derived for OFDM ranging independent of the transmitted information. Simulation results and experimental measurements at a carrier frequency of 1.4 GHz with 200 MHz of bandwidth are included. Range estimation is demonstrated with a standard deviation of 1.6 mm in a realistic laboratory environment with no anechoic walls.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1407-1410"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inverted Frequency-Coded Chipless RFID Tag Design Methodology Based on Parameter Optimization 基于参数优化的倒频编码无芯片RFID标签设计方法
IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3467311
Cong-Cuong Le;Trung-Kien Dao;Ngoc-Yen Pham;Thanh-Huong Nguyen
{"title":"Inverted Frequency-Coded Chipless RFID Tag Design Methodology Based on Parameter Optimization","authors":"Cong-Cuong Le;Trung-Kien Dao;Ngoc-Yen Pham;Thanh-Huong Nguyen","doi":"10.1109/LMWT.2024.3467311","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3467311","url":null,"abstract":"Frequency-coded chipless radio frequency identification (RFID) tag design frequently suffers from the mutual coupling effect among resonant components, which causes the frequency shifting phenomenon. It is very difficult to thoroughly resolve this problem because of design requirements, such as high capacity and limited space on a single tag. In this letter, a novel design method based on particle swarm optimization (PSO) in combination with empirical Taguchi method (TM) is proposed. With this methodology, the optimal design parameters are automatically searched and fitted to comply with the resonance requirements at the given encoding frequencies. The proposed method was demonstrated with the design process of an I-shaped slot tag structure.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1399-1402"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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