AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianchao Wang;Kaiyu Wang;Ruizhe Zhang;Xiaoqiang He;Sheng Zhang;Jiaqi Guo;Jiebin Niu;Yankui Li;Weichao Wu;Weijun Luo;Xiaojuan Chen;Sen Huang;Xinhua Wang;Ke Wei;Xinyu Liu
{"title":"AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications","authors":"Jianchao Wang;Kaiyu Wang;Ruizhe Zhang;Xiaoqiang He;Sheng Zhang;Jiaqi Guo;Jiebin Niu;Yankui Li;Weichao Wu;Weijun Luo;Xiaojuan Chen;Sen Huang;Xinhua Wang;Ke Wei;Xinyu Liu","doi":"10.1109/LMWT.2025.3553152","DOIUrl":null,"url":null,"abstract":"In this work, a high-performance AlN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with germanium nitride (GeN) as a gate dielectric was fabricated. The gate dielectric was deposited using thermal evaporation and nitridation methods to prevent interface damage and fixed charges caused by plasma growth or sputtering. With the developed nitride-GeN dielectric, the MIS devices exhibit excellent electrical characteristics, including a negligible hysteresis of 0.05 V, a four-order reduction in gate leakage current, and an enhanced gate swing voltage. For a 150-nm gate length, the device achieved a maximum drain current density of 2.03A/mm and an effective current-gain cutoff frequency/maximum oscillation frequency (<inline-formula> <tex-math>$f_{\\mathrm {T}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f_{\\mathrm {MAX}}$ </tex-math></inline-formula>) of 81/131 GHz. At 30 GHz, it delivered a remarkable power density of 3.9 W/mm at <inline-formula> <tex-math>$V_{\\mathrm {DS}} =12$ </tex-math></inline-formula> V in the CW mode. These promising results indicate that GeN could be a new and attractive gate dielectric option for AlN/GaN HEMTs functioning in the Ka-band frequency range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"896-899"},"PeriodicalIF":0.0000,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10963731/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, a high-performance AlN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with germanium nitride (GeN) as a gate dielectric was fabricated. The gate dielectric was deposited using thermal evaporation and nitridation methods to prevent interface damage and fixed charges caused by plasma growth or sputtering. With the developed nitride-GeN dielectric, the MIS devices exhibit excellent electrical characteristics, including a negligible hysteresis of 0.05 V, a four-order reduction in gate leakage current, and an enhanced gate swing voltage. For a 150-nm gate length, the device achieved a maximum drain current density of 2.03A/mm and an effective current-gain cutoff frequency/maximum oscillation frequency ( $f_{\mathrm {T}}$ / $f_{\mathrm {MAX}}$ ) of 81/131 GHz. At 30 GHz, it delivered a remarkable power density of 3.9 W/mm at $V_{\mathrm {DS}} =12$ V in the CW mode. These promising results indicate that GeN could be a new and attractive gate dielectric option for AlN/GaN HEMTs functioning in the Ka-band frequency range.
用于毫米波应用的具有GeN栅介质的AlN/GaN mis_hemt
本文以氮化锗(GeN)为栅极介质,制备了高性能的AlN/GaN金属绝缘体-半导体高电子迁移率晶体管(MIS-HEMT)。为了防止等离子体生长或溅射造成的界面损伤和固定电荷,采用热蒸发和氮化方法沉积栅极电介质。利用开发的氮化镓介电介质,MIS器件具有优异的电学特性,包括可忽略不计的0.05 V滞后,栅极泄漏电流降低四阶,栅极摆压增强。在150 nm栅极长度下,器件的最大漏极电流密度为2.03A/mm,有效电流增益截止频率/最大振荡频率($f_{\mathrm {T}}$ / $f_{\mathrm {MAX}}$)为81/131 GHz。在30 GHz时,在$V_{\ mathm {DS}} =12$ V的连续波模式下,它提供了3.9 W/mm的显著功率密度。这些有希望的结果表明,对于在ka频段范围内工作的AlN/GaN hemt, GeN可能是一种新的有吸引力的栅极介质选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信