在65nm CMOS中实现202.3 dBc/Hz fft的16.6- 34.1 GHz双核四模振荡器

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Xin Yu;Xiaolong Liu
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引用次数: 0

摘要

这项工作提出了一种毫米波(mm波)双核四模振荡器,其中包含一个无开关的第三环路,以扩展频率调谐范围(FTR),而不会引入额外的开关损耗或寄生。该设计耦合了两个相同的基于变压器的双频(低频和高频)压控振荡器(vco),可通过模式开关在偶数或奇数模式下配置。在高频段和低频段,无开关三次环路在偶模下为开路,在奇模下为短路,从而实现四种不同的频率模式。该振荡器采用65纳米CMOS工艺制造,FTR范围为16.6至34.1 GHz,相位噪声范围为- 122.4至- 130.0 dBc/Hz,偏移量为10 mhz,功耗为9.5-11mW。这导致峰值FoM为185.5 dBc/Hz, FoM为202.3 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 16.6-to-34.1 GHz Dual-Core Quad-Mode Oscillator Achieving 202.3 dBc/Hz FoMT in 65nm CMOS
This work presents a millimeter-wave (mm-wave) dual-core quad-mode oscillator incorporating a switch-less tertiary loop to extend the frequency tuning range (FTR) without introducing additional switch loss or parasitic. The design couples two identical transformer-based dual-band (low- and high-frequency) voltage-controlled oscillators (VCOs), which are configurable in either even or odd modes via mode switches. In the high- and low-frequency band, the switch-less tertiary loop functions as an open circuit in the even mode and a short circuit in the odd mode, enabling four distinct frequency modes. Fabricated in a 65-nm CMOS process, the proposed oscillator achieves an FTR from 16.6 to 34.1 GHz, with phase noise ranging from −122.4 to −130.0 dBc/Hz at a 10-MHz offset, while consuming 9.5–11mW of power. This results in a peak FoM of 185.5 dBc/Hz and FoMT of 202.3 dBc/Hz.
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