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IEEE microwave and wireless technology letters最新文献

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A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology 基于0.1 μm GaAs pHEMT技术的220 ghz有源下变频混频器
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3525762
Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu
{"title":"A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology","authors":"Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu","doi":"10.1109/LMWT.2025.3525762","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3525762","url":null,"abstract":"Terahertz (THz) mixers play a paramount role in high-speed communication and high-precision detection, yet are constrained by the typical need for advanced fabrication technologies and high-power THz local oscillator (LO) pump sources. This article presents the design and implementation of a single-ended subharmonic down-conversion mixer, leveraging a gate-pumped topology that operates with low LO input frequency and power requirements. The monolithic microwave integrated circuit (MMIC) of the mixer is fabricated in a 0.1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology and mounted to form a module. The mixer module exhibits a 3-dB radio frequency (RF) bandwidth (BW) of approximately 26 GHz, covering the range from 206 to 232 GHz. The performance supports the down-conversion of a 12-Gb/s optoelectronic THz communication system, offering a promising solution for cost-effective broadband THz converters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"354-357"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays 横向布置多继电器的广义pt对称无线电力传输系统
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3526140
Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng
{"title":"Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays","authors":"Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng","doi":"10.1109/LMWT.2025.3526140","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526140","url":null,"abstract":"The concept of parity-time (PT) symmetry, when applied in wireless power transfer (WPT) systems, helps to prevent a decrease in power delivery. In existing research on PT-symmetric WPT systems with laterally arranged multirelays, employed for expanding the lateral transfer region, only a special case has been considered for the coupling coefficient required to achieve PT symmetry. This strict special case condition increases the complexity and difficulty of implementing the system in reality. In this letter, a general condition of coupling coefficient for the PT-symmetric system with laterally arranged multirelays is analytically derived, by reducing a high-order Hamiltonian to an equivalent second-order one. The theoretical derivation is experimentally verified. An experimental system example with two relays demonstrates about a 100% increase in lateral transfer distance with stable power transfer, compared to the traditional system without relays. Our work paves the way for implementation of simpler high-order PT-symmetric systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"366-369"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap 基于变压器二次谐波陷阱的CMOS线性低噪声放大器
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3522299
Il Jun Kim;Min-Su Kim
{"title":"A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap","authors":"Il Jun Kim;Min-Su Kim","doi":"10.1109/LMWT.2024.3522299","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522299","url":null,"abstract":"This letter presents second-harmonic termination techniques for inductively source-degenerated cascode CMOS low-noise amplifiers (LNAs) with a transformer (TF)-based harmonic network. The proposed harmonic trap circuit terminates the second-order distortion generated in the common-source stage of the cascode structure, thereby improving the linearity of the LNA. In a transformed-based harmonic trap circuit, the primary inductor of the TF is used as the source-degenerated inductor for fundamental frequency gain and noise matching, and the secondary inductor along with an additional capacitor is used to terminate the second-harmonic frequency through LC resonance. The LNA is implemented using a 90-nm CMOS process and includes on-chip electrostatic discharge (ESD) protection circuits, making it suitable for commercialization. The fabricated LNA achieves a small signal gain of 18.48 dB, a noise figure (NF) of 1.1 dB, and an third input intercept point (IIP3) performance of -5.9 dBm at 2.62 GHz. The chip has an area of <inline-formula> <tex-math>$416times 879~mu $ </tex-math></inline-formula>m2 excluding the guard-ring layer, and it consumes 11.76 mW of power at a supply voltage of 1.2 V.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"338-341"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10837581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS 基于非对称电流分布的0.2 - 3.2 ghz有源Balun-LNA
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3525066
Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu
{"title":"A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS","authors":"Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu","doi":"10.1109/LMWT.2024.3525066","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525066","url":null,"abstract":"This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"326-329"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521605
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3521605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521605","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835206","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Welcome to the New Editor-in-Chief 欢迎来到新主编
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522597
Roberto Gómez García;Zhizhang David Chen
{"title":"Welcome to the New Editor-in-Chief","authors":"Roberto Gómez García;Zhizhang David Chen","doi":"10.1109/LMWT.2024.3522597","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522597","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"2-3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835209","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS” “40纳米CMOS变压器嵌入式网络gmax核心的d波段高增益低噪声放大器”的勘误表
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3515712
Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng
{"title":"Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”","authors":"Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng","doi":"10.1109/LMWT.2024.3515712","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515712","url":null,"abstract":"Presents corrections to the paper, Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"139-139"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835207","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521603
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3521603","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521603","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835838","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS 65纳米CMOS中192 dbc /Hz峰值波形的宽带谐波整形压控振荡器
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3520965
Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue
{"title":"A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS","authors":"Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue","doi":"10.1109/LMWT.2024.3520965","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3520965","url":null,"abstract":"In this brief, a class-<inline-formula> <tex-math>$F_{23}$ </tex-math></inline-formula> voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic (<inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula>) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between <inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3f_{0}$ </tex-math></inline-formula> to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of <inline-formula> <tex-math>$0.198~text {mm}^{2}$ </tex-math></inline-formula>, the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"322-325"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing 用于差分微波传感的四分之一模欺骗局域表面等离子体
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522375
Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu
{"title":"Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing","authors":"Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu","doi":"10.1109/LMWT.2024.3522375","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522375","url":null,"abstract":"In this letter, a differential microwave sensor designed based on quarter-mode spoof localized surface plasmons (SLSPs) is presented. The differential sensor consists of two independent sensors each exciting a symmetrically structured resonance unit, and the size of the differential sensor is reduced by a factor of one by the composition of two independent quarter modes. A prototype of this sensor has been fabricated, and measurements have been performed on dielectric substrates with different dielectric constants and on ethanol solutions with different concentrations. The experimental results show that the sensor has an average relative sensitivity of 1.64% and 0.18% when measuring solids and liquids respectively. This work is applicable to the detection of dielectric constant of solid materials and liquid concentration in industry.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"270-273"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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