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A Compact 3.5–11-GHz VGA With 32-dB Gain Tuning Range in 130-nm SiGe BiCMOS 紧凑型3.5-11-GHz VGA，在130纳米SiGe BiCMOS中具有32db增益调谐范围
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2025-04-30 DOI: 10.1109/LMWT.2025.3558848
Xu Wang;Kaixue Ma;Yuefeng Hou;Kejie Hu
{"title":"A Compact 3.5–11-GHz VGA With 32-dB Gain Tuning Range in 130-nm SiGe BiCMOS","authors":"Xu Wang;Kaixue Ma;Yuefeng Hou;Kejie Hu","doi":"10.1109/LMWT.2025.3558848","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3558848","url":null,"abstract":"This letter presents a compact ultrawideband variable gain amplifier (VGA) with large gain tuning range and low phase error implemented in 130-nm SiGe BiCMOS process. First, the series RLC-based feedback technique (SRFT) is used to efficiently expand the bandwidth, which is combined with inductorless passive switching attenuators to realize large gain tuning range with less inductors. Next, the phase compensation inductor is introduced between stages to decrease phase variation under different gain states. This design achieves 32-dB gain tuning range with 1-dB gain step in the operation band of 3.5–11 GHz, and the core area is only 0.47 mm<sup>2</sup>. The gain flatness is less than 1 dB, and the maximum rms phase error is 3.9° in the operation band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1234-1237"},"PeriodicalIF":3.4,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 26.5–38-GHz Ka-Band GaN-on-Si Low-Noise Amplifier With Variable Gain Control 具有可变增益控制的26.5 - 38 ghz ka波段GaN-on-Si低噪声放大器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2025-04-30 DOI: 10.1109/LMWT.2025.3563801
Zhihao Zhang;Jinfeng Chen;Kai Yu;Tong Wang;Gary Zhang
{"title":"A 26.5–38-GHz Ka-Band GaN-on-Si Low-Noise Amplifier With Variable Gain Control","authors":"Zhihao Zhang;Jinfeng Chen;Kai Yu;Tong Wang;Gary Zhang","doi":"10.1109/LMWT.2025.3563801","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3563801","url":null,"abstract":"A broadband 26.5–38-GHz low-noise amplifier (LNA) with variable gain (VG) functionality, utilizing 100-nm gallium nitride on silicon (GaN-on-Si) process for Ka-band, is proposed. To achieve adjustable gain while minimizing noise degradation within a controllable range, a structured design procedure for device periphery and bias condition is introduced. Furthermore, a hybrid matching methodology combining low-pass and high-pass networks with a dual feedback loop in the last two stages is implemented for bandwidth enhancement. A 3-bit digital Si-CMOS controller is incorporated to modulate the gate bias of the GaN amplifier. Operating at 5 V with a quiescent current (<inline-formula> <tex-math>$I_{mathrm {DQ}}$ </tex-math></inline-formula>) of 60 mA, the fabricated VG-LNA exhibits the measured gain of 26.9–29.9 dB, noise figure (NF) of 1.57–2.83 dB, and output power at 1-dB compression point (<inline-formula> <tex-math>$text{OP}_{mathrm {1 ~dB}}$ </tex-math></inline-formula>) of 9.2–16.5 dBm across 26.5–38 GHz. A reduction in <inline-formula> <tex-math>$I_{mathrm {DQ}}$ </tex-math></inline-formula> from 100 to 20 mA results in a decline in peak gain from 31 to 24.1 dB at 28 GHz, accompanied by an increase in the minimum NF from 1.57 to 2.03 dB, and a decrease in the maximum <inline-formula> <tex-math>$text{OP}_{mathrm {1~dB}}$ </tex-math></inline-formula> from 18 to 14.8 dBm. To the best of our knowledge, this is the first demonstration of a GaN LNA with VG control feature.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1214-1217"},"PeriodicalIF":3.4,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Filtering Patch Crossover With Improved Stopband Rejection Range and Reduced Size 一种改进阻带抑制范围和减小尺寸的滤波贴片交叉器
IEEE microwave and wireless technology letters Pub Date : 2025-04-29 DOI: 10.1109/LMWT.2025.3562170
Xin Zhou;Gang Zhang;Chaoyu Jiang;Zhuowei Zhang;Kam-Weng Tam
{"title":"A New Filtering Patch Crossover With Improved Stopband Rejection Range and Reduced Size","authors":"Xin Zhou;Gang Zhang;Chaoyu Jiang;Zhuowei Zhang;Kam-Weng Tam","doi":"10.1109/LMWT.2025.3562170","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3562170","url":null,"abstract":"This letter presents a new and straightforward design method for a patch filtering crossover that features an improved stopband performance and reduced size. A square patch with orthogonal mode TM<sub>10</sub> and TM<sub>01</sub> resonances is positioned at the intersection, while four half-mode patches with half-TM<sub>10</sub> mode resonances are arranged around the square patch. Isolation between channels is achieved through mode cancellation. Due to the unique excitation of the half-mode patch and the interweaving of spurious modes, the −20-dB stopband range has been extended to <inline-formula> <tex-math>$2.98f_{0}$ </tex-math></inline-formula>. A prototype has been designed, fabricated, and measured to validate the proposal, demonstrating good consistency between the simulated and measured results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"985-988"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a High-Efficiency Extended Continuous-Mode Inverse Class-GF Power Amplifier With Enhanced Bandwidth 增强带宽的高效扩展连续模逆gf类功率放大器的设计
IEEE microwave and wireless technology letters Pub Date : 2025-04-29 DOI: 10.1109/LMWT.2025.3559999
Zhenghua Wei;Qiang Liu;Guangxing Du;Guolin Li;Wang Liu
{"title":"Design of a High-Efficiency Extended Continuous-Mode Inverse Class-GF Power Amplifier With Enhanced Bandwidth","authors":"Zhenghua Wei;Qiang Liu;Guangxing Du;Guolin Li;Wang Liu","doi":"10.1109/LMWT.2025.3559999","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3559999","url":null,"abstract":"This letter provides an extended continuous-mode inverse class-GF (ECCGF<sup>−1</sup>) concise theory for the design of a high-efficiency power amplifier (PA) with enhanced bandwidth. Compared with the typical continuous-mode inverse class-GF (CCGF<sup>−1</sup>), a broader design space considering input nonlinearity is explored by simplified formulas based on the harmonic components of the drain current in class-GF<sup>−1</sup>. Moreover, the problem of current overshoot can be alleviated in ECCGF<sup>−1</sup>. For verification, a prototype is designed and fabricated by using a 10-W GaN HEMT device. The measured results show that the output power of 39.8–42.2 dBm, drain efficiency (DE) of 61%–78.6%, and gain of 9.8–12.2 dB are achieved over the relative bandwidth (RBW) of 136.8% from 0.6 to 3.2 GHz. In contrast with the other types of PA, the design exhibits a wider bandwidth and comparable efficiency.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1041-1044"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A K-Band Quartz Glass Absorptive Bandpass Filter With On-Chip Power-Divider-Like Architecture 一种k波段石英玻璃吸收带通滤波器，具有片上功率分压器结构
IEEE microwave and wireless technology letters Pub Date : 2025-04-29 DOI: 10.1109/LMWT.2025.3562586
Mingye Fu;Qianyin Xiang;Dinghong Jia;Quanyuan Feng
{"title":"A K-Band Quartz Glass Absorptive Bandpass Filter With On-Chip Power-Divider-Like Architecture","authors":"Mingye Fu;Qianyin Xiang;Dinghong Jia;Quanyuan Feng","doi":"10.1109/LMWT.2025.3562586","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3562586","url":null,"abstract":"In this letter, a novel integrated absorptive bandpass filter based on two-paths architecture with on chip power-divider-like three-port networks and filtering cores is presented. An imaginary impedance element is added in the middle of the absorptive resistor network for mitigating the common mode reflected waves in the stopband, and wideband reflection loss in the stopband is achieved. A quartz glass bandpass absorptive filter is designed and fabricated, with a die size of <inline-formula> <tex-math>$6.65 times 4.89$ </tex-math></inline-formula>mm. Measurement shows the filter is centered at 21.5 GHz with a 3-dB bandwidth (BW) of 3.3 GHz, an insertion loss (IL) of 1.8dB, and a wideband absorptive response from dc to 40 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"961-964"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiangle Complexity-Reduced Digital Predistortion for 5G/6G Massive MIMO Beamforming Transmitters 5G/6G大规模MIMO波束形成发射机多角度复杂性降低数字预失真
IEEE microwave and wireless technology letters Pub Date : 2025-04-29 DOI: 10.1109/LMWT.2025.3560633
Zehao Chen;Cuiping Yu;Ke Tang;Hao Li;Feifei Li;Xunnan Zhang;Yuanan Liu
{"title":"Multiangle Complexity-Reduced Digital Predistortion for 5G/6G Massive MIMO Beamforming Transmitters","authors":"Zehao Chen;Cuiping Yu;Ke Tang;Hao Li;Feifei Li;Xunnan Zhang;Yuanan Liu","doi":"10.1109/LMWT.2025.3560633","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3560633","url":null,"abstract":"This letter presents a multiangle digital predistortion (DPD) method for linearizing 5G/6G massive multiple-input–multiple-output (mMIMO) beamforming transmitters. The cascade structure composed of a main box and the subbox tuning network is applied to linearize the main beam and all power amplifiers (PAs). The main box is a proposed improved full basis-propagating selection (IFBPS) DPD model with low complexity and accurate modeling properties. The subbox tuning network can linearize the PAs by several heterogeneous DPDs corresponding to the clustering categories based on the threshold decision results. The measurements were carried out on the laboratory-made PAs based on a single-user two-stream and four-chain MIMO system. Compared with the state-of-the-art DPDs, the results show that the proposed method can improve linearization performance with lower complexity and keep the multiangle linearity of systems without updating the coefficients in real time.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1077-1080"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Flexible BPF Using Coaxial Open-Loop Dumbbell Branch Defected Conductor Structures 基于同轴开环哑铃支路缺陷导体结构的柔性BPF设计
IEEE microwave and wireless technology letters Pub Date : 2025-04-29 DOI: 10.1109/LMWT.2025.3557406
Yunan Han;Mengyao Cai;Jin Xu;Chunyue Cheng
{"title":"Design of a Flexible BPF Using Coaxial Open-Loop Dumbbell Branch Defected Conductor Structures","authors":"Yunan Han;Mengyao Cai;Jin Xu;Chunyue Cheng","doi":"10.1109/LMWT.2025.3557406","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557406","url":null,"abstract":"This letter introduces a flexible bandpass filter (BPF) that employs a coaxial structure, consisting of an inner substrate, an inner conductor featuring open-loop dumbbell-shaped defects, an outer conductor with a loop-shaped defect gap, and a transmission dielectric situated between the two conductors. For fabrication, the inner and outer defective conductor structures are manufactured using flexible printed circuit board (FPCB) technology and assembled to form the BPF with a diameter of 3.42 mm and a length of 80 mm for three cascaded resonators. Simulation and measurement results indicate that the insertion loss within the passband of 2.4–4.0 GHz is less than 1 dB, with a rejection of more than 20 dB below 1.2 GHz and above 4.6GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"965-968"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-Multiplexed Beam-Steering Antenna Arrays for Extended-Coverage RF Powering of Multiple CMOS Brain Implants 多CMOS脑植入物扩展覆盖射频供电的时复用波束导向天线阵列
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3559017
Mohammad Abdolrazzaghi;Roman Genov;George V. Eleftheriades
{"title":"Time-Multiplexed Beam-Steering Antenna Arrays for Extended-Coverage RF Powering of Multiple CMOS Brain Implants","authors":"Mohammad Abdolrazzaghi;Roman Genov;George V. Eleftheriades","doi":"10.1109/LMWT.2025.3559017","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3559017","url":null,"abstract":"This letter introduces a wireless powering system for multiple implantable devices located across a wide region of the human brain, addressing the spatial coverage challenges in traditional powering methods. We present an RF phased-array time-multiplexing technique that extends the powering coverage to as far as one hemisphere. The transmitter (TX) array is designed with optimal surface currents at 915 MHz to reach and beam-steer deep brain tissue. With transmitting 1 W, this method ensures safe and consistent power delivery over 18-cm lateral span and provides at least <inline-formula> <tex-math>$250~mu $ </tex-math></inline-formula>W to 6-cm deep receiver (RX) implants. In addition, we developed a dynamically biased 65-nm CMOS rectifier, featuring peak power conversion efficiency (PCE) of 72.6% at −2 dBm input power. The integration of phased-array multiplexing and an efficient CMOS rectifier offers a pathway toward arrays of smaller, battery-free neurostimulation implants, capable of simultaneous operation under stringent safety requirements and limited wearable power source size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"908-911"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Miniaturized IPD Filter With Multiple Flexible Transmission Zeros and High Attenuation 具有多个灵活传输零点和高衰减的小型化IPD滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3561157
Lin Gu;Xinyu Zhou;Yuandan Dong
{"title":"Miniaturized IPD Filter With Multiple Flexible Transmission Zeros and High Attenuation","authors":"Lin Gu;Xinyu Zhou;Yuandan Dong","doi":"10.1109/LMWT.2025.3561157","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3561157","url":null,"abstract":"In this letter, a miniaturized integrated passive device (IPD) bandpass filter (BPF) with multiple flexibly controllable transmission zeros (TZs), high attenuation, and low loss is proposed. The proposed novel <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type filtering unit incorporates dual <italic>LC</i> series resonant circuits that allow precise placement of two TZs, enhancing the BPF’s selectivity and expanding the stopband bandwidth. Since the branches generating TZs are not the main energy paths, adding multiple TZs causes minimal loss. A three-stage BPF, based on this <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type filtering unit, demonstrates high selectivity and attenuation by introducing three TZs on each side of the passband. At the same time, it possesses the advantage of low loss. Manufactured using the GaAs-based IPD technology, the filter exhibits excellent agreement between the simulated and measured results, showcasing its potential for applications requiring ultraminiaturization and high performance in wireless communication systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"989-992"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Back-Off Range Extension of Doherty Power Amplifier Using Parasitic Capacitance Compensation 利用寄生电容补偿的Doherty功率放大器退关范围扩展
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2025-04-28 DOI: 10.1109/LMWT.2025.3557507
Fu Cheng Yuan;Bai Hua Zeng;Shao Yong Zheng
{"title":"Back-Off Range Extension of Doherty Power Amplifier Using Parasitic Capacitance Compensation","authors":"Fu Cheng Yuan;Bai Hua Zeng;Shao Yong Zheng","doi":"10.1109/LMWT.2025.3557507","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557507","url":null,"abstract":"Efficiencies of a Doherty power amplifier (DPA) at output back-off (OBO) levels are limited by the parasitic parameters of transistors. To deal with this issue, an effective approach is proposed in this letter to enhance efficiency and the OBO range of a DPA. An equivalent negative capacitance network (ENCN) is utilized to compensate for reactive impedances of the carrier amplifier, which can significantly boost efficiency at the deep back-off. For validation, an asymmetric DPA utilizing the out-phased current combining method is designed to achieve an extended OBO range. When the operating frequency is 2.55 GHz in continuous-wave measurement, the implemented DPA can obtain drain efficiencies of 54.8% at 11.6-dB OBO level and 74.4% at saturation (43.1 dBm), respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1198-1201"},"PeriodicalIF":3.4,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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