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Toward 5G Wireless Power Harvesting: A Promising Broadbeam Equiconvex Lens-Integrated mmWave Harvester for Smart City Environments 迈向5G无线能量收集：用于智慧城市环境的有前途的宽带等凸透镜集成毫米波收集器
IEEE microwave and wireless technology letters Pub Date : 2025-03-28 DOI: 10.1109/LMWT.2025.3570677
Marvin Joshi;Kexin Hu;Charles A. Lynch;Manos M. Tentzeris
{"title":"Toward 5G Wireless Power Harvesting: A Promising Broadbeam Equiconvex Lens-Integrated mmWave Harvester for Smart City Environments","authors":"Marvin Joshi;Kexin Hu;Charles A. Lynch;Manos M. Tentzeris","doi":"10.1109/LMWT.2025.3570677","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3570677","url":null,"abstract":"For the first time, the authors propose a 3-D lens-enabled, broadbeam energy harvester capable of mW-level of harvested power across a wide angular coverage. The design incorporates a 25-rectenna “pixel” array, each featuring a circularly polarized antenna with a highly sensitive half-wave rectifier, and an equiconvex 3-D dielectric lens to enhance power capture and angular coverage. In a proof-of-concept testing, the harvester achieved a peak power capture of 6.5 mW and maintained mW level of harvested power, at incident power densities as low as 0.1 mW/cm<sup>2</sup>, across a broad solid angle of 2.68sr, representing the highest combined harvested power across angular coverage among mmWave harvesters. With 5G/mm-Wave EIRP of <inline-formula> <tex-math>$mathrm {75~dBm}$ </tex-math></inline-formula>, the harvester can theoretically capture 6.5 mW at 40 m and sustain 1 mW out to 80 m. With broadbeam coverage and efficient energy harvesting, this system enables advanced smart city applications while reducing reliance on traditional power sources.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"904-907"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Transfer Learning-Based CNN–Transformer Framework for Efficient Behavior Prediction of Microwave Passive Components 基于迁移学习的cnn -变压器框架用于微波无源元件的有效行为预测
IEEE microwave and wireless technology letters Pub Date : 2025-03-28 DOI: 10.1109/LMWT.2025.3551419
Cong Zhang;Fan Wu;Xiaoqiang Zhu;Huadong Ma;Yuanan Liu
{"title":"A Transfer Learning-Based CNN–Transformer Framework for Efficient Behavior Prediction of Microwave Passive Components","authors":"Cong Zhang;Fan Wu;Xiaoqiang Zhu;Huadong Ma;Yuanan Liu","doi":"10.1109/LMWT.2025.3551419","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551419","url":null,"abstract":"As the design of microwave components becomes increasingly complex, traditional full-wave electromagnetic (EM) simulations have become time-consuming and resource-intensive. This letter introduces an innovative approach for predicting the behavior of microwave components. The method categorizes design parameters into two main groups: structural parameters for basic geometric shapes and free-form control parameters for more intricate, irregular designs. A convolutional neural network (CNN) based on a transformer model is also developed, leveraging transfer learning to enhance prediction accuracy, efficiency, and generalization. Experimental results demonstrate high-precision predictions, offering a novel solution for the efficient design and optimization of microwave components.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"630-633"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 3.5-/28-GHz Dual-Band IPD Bandpass Filter Using GaAs Process for 5G Application 基于GaAs工艺的5G 3.5 / 28ghz双频IPD带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-03-27 DOI: 10.1109/LMWT.2025.3552089
Guangxu Shen;Bijing Wen;Zizhe He;Na Ji;Wenjie Feng;Wenquan Che
{"title":"A 3.5-/28-GHz Dual-Band IPD Bandpass Filter Using GaAs Process for 5G Application","authors":"Guangxu Shen;Bijing Wen;Zizhe He;Na Ji;Wenjie Feng;Wenquan Che","doi":"10.1109/LMWT.2025.3552089","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552089","url":null,"abstract":"In this letter, a dual-band bandpass filter (BPF) is proposed with a large frequency ratio, utilizing gallium arsenide (GaAs)-based integrated passive device (IPD) technology. To address the challenge of integrating microwave (MW) and millimeter-wave (mm-Wave) bands with a large frequency ratio, a parallel topology is introduced. This topology combines an MW BPF with a wide upper stopband and a mm-Wave BPF with a wide lower stopband. The enhanced stopband suppression will naturally realize an open circuit to the adjacent filtering channel, and the conventional T-junction is removed for size reduction. To realize a wide upper stopband, a quasi-lumped BPF and two low-pass stubs are co-designed. To enhance the suppression of lower and inter stopband, lumped metal–insulator–metal (MIM) capacitors are added to the feeding line of mm-Wave BPF. For demonstration, a 3.5-/28-GHz dual-band BPF is designed, fabricated, and measured. All simulation and measurement results are in good agreement, validating the proposed structures.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"686-689"},"PeriodicalIF":0.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Fully Integrated Ka-Band FMCW Radar SoC With Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS 全集成ka波段FMCW雷达SoC，带基带加速器，用于40纳米CMOS生命体征监测
IEEE microwave and wireless technology letters Pub Date : 2025-03-27 DOI: 10.1109/LMWT.2025.3551781
Pengfei Diao;Chenyu Xu;Ning Jiang;Xiaofei Liao;Bo Wang;Peng Zhang;Ning Zhang;Yang Li;Qisong Wu;Dixian Zhao
{"title":"A Fully Integrated Ka-Band FMCW Radar SoC With Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS","authors":"Pengfei Diao;Chenyu Xu;Ning Jiang;Xiaofei Liao;Bo Wang;Peng Zhang;Ning Zhang;Yang Li;Qisong Wu;Dixian Zhao","doi":"10.1109/LMWT.2025.3551781","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551781","url":null,"abstract":"This letter presents a fully integrated Ka-band frequency-modulated continuous-wave (FMCW) radar system-on-chip (SoC). To enable compact-size, low-cost, and quick-to-deploy sensors, the FMCW radar transceiver (TRX), radar processor, and microcontroller unit (MCU) are all integrated to reduce the cost and complexity of board-level circuits. Benefiting from the baseband accelerator (BBA) that features a universal vital signs monitoring algorithm, the single-chip sensor can run the full radar signal-processing stack efficiently. Fabricated in 40-nm CMOS, the measured 3-dB bandwidth of this SoC ranges from 30.3 to 39.7 GHz and the noise figure (NF) is 8 dB. The achieved saturated output power is higher than 14.4 dBm with a continuous modulation bandwidth of 1.8 GHz. In the vital signs monitoring experiments, the heartbeat (i.e., 75.60 bpm) and respiratory (i.e., 25.20 bpm) signals can be correctly detected. Operated with a clock of 200 MHz, the power consumption of the SoC is 920 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"884-887"},"PeriodicalIF":0.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Miniaturized Dual-Band Bandpass Filter Using Triple-Mode Dielectric Waveguide Resonators With Adjustable Capacity in Transmission Zeros 采用三模介质波导谐振器的小型化双带带通滤波器，传输零点容量可调
IEEE microwave and wireless technology letters Pub Date : 2025-03-27 DOI: 10.1109/LMWT.2025.3550814
Fan Liu;Xin Liu;Zhewang Ma;Li-An Bian;Pin Wen;Kai-Da Xu
{"title":"Miniaturized Dual-Band Bandpass Filter Using Triple-Mode Dielectric Waveguide Resonators With Adjustable Capacity in Transmission Zeros","authors":"Fan Liu;Xin Liu;Zhewang Ma;Li-An Bian;Pin Wen;Kai-Da Xu","doi":"10.1109/LMWT.2025.3550814","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3550814","url":null,"abstract":"In this letter, a miniaturized dual-band bandpass filter (BPF) using triple-mode dielectric waveguide resonators (DWRs) with two adjustable transmission zeros (TZs) is presented. In the triple-mode DWR, three TM modes are divided into two groups and utilized to generate a dual-band response. Specifically, the fundamental TM110 modes are utilized to construct the lower passband, which contains two poles, while the degenerate TM120 and TM210 modes form a cascaded quadruplet (CQ) unit that generates the upper passband with four poles. Both positive and negative couplings within the upper passband are readily achieved by simply adjusting the positions of two coupling holes. A TZ pair near the upper passband is introduced with significant flexibility and can be arbitrarily positioned. Finally, a dual-band BPF with a symmetric TZ pair using the DWR is designed and fabricated. Good agreement between the simulated and measured responses validates the design idea.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"670-673"},"PeriodicalIF":0.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4–420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11 ± 2 dB Gain 增益为11±2db的20nm InGaAs-on-Si HEMT技术4 - 420ghz分布式放大器MMIC
IEEE microwave and wireless technology letters Pub Date : 2025-03-26 DOI: 10.1109/LMWT.2025.3551639
Fabian Thome;Arnulf Leuther
{"title":"A 4–420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11 ± 2 dB Gain","authors":"Fabian Thome;Arnulf Leuther","doi":"10.1109/LMWT.2025.3551639","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551639","url":null,"abstract":"This letter presents a distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) achieving a bandwidth (BW) of 4–420 GHz with a small-signal gain of 11 ± 2 dB. This sets a new BW record for ultrawideband amplifier MMICs. DA MMIC utilizes the Fraunhofer IAF 20-nm gatelength InGaAs-on-Si high-electron-mobility transistor (HEMT) technology and features ten gain cells. Each cell contains an RF cascode using two-finger transistors with a total gate width (TGW) of 16 μm. The measured noise figure (NF) is in the range of 3.2–7.7 dB (<202 GHz) and 2.8–6.7 dB when biased for lownoise (LN) conditions. Especially, the high-frequency NF shows a remarkable performance, e.g., achieving an average NF of 4.7 and 5 dB (163–202 GHz) for LN and standard bias, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"844-847"},"PeriodicalIF":0.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10941702","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A V-Band Divide-by-6 Injection-Locked Frequency Divider Using Current-Reused Topology With Second Injection and Harmonic Boosting 基于二次注入和谐波升压电流复用拓扑的v波段分频器
IEEE microwave and wireless technology letters Pub Date : 2025-03-26 DOI: 10.1109/LMWT.2025.3549756
Po-Yuan Chen;Hong-Yeh Chang
{"title":"A V-Band Divide-by-6 Injection-Locked Frequency Divider Using Current-Reused Topology With Second Injection and Harmonic Boosting","authors":"Po-Yuan Chen;Hong-Yeh Chang","doi":"10.1109/LMWT.2025.3549756","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3549756","url":null,"abstract":"This letter presents a V-band injection-locked frequency divider (ILFD) with high input sensitivity and wide locking range (LR), implemented in 90-nm CMOS technology. The proposed divide-by-6 ILFD employs a modified current-reused topology with second injection and harmonic boosting to enhance the overall LR while maintaining high sensitivity. This architecture consists of two stages: a front-stage divide-by-2 ILFD, followed by a back-stage divide-by-3 ILFD. At an input power of 0 dBm, the measured maximum LR reaches up to 8.1 GHz, covering frequencies from 54.7 to 62.8 GHz. This design achieves the highest LR <inline-formula> <tex-math>$times {n}$ </tex-math></inline-formula> and has comparable figure of merits (FoMs) among the reported CMOS microwave and millimeter-wave (mm-wave) ILFDs, when operated at lower input powers. Notably, this proposed ILFD offers a unique combination of features: wide LR with a low dc power consumption of 12.2 mW, competitive input sensitivity, and a high division ratio up to six.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"702-705"},"PeriodicalIF":0.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks 一种全ai无源网络的d波段InP功率放大器
IEEE microwave and wireless technology letters Pub Date : 2025-03-26 DOI: 10.1109/LMWT.2025.3566666
Song Hang Chai;Hyunsu Chae;Hao Yu;David Z. Pan;Sensen Li
{"title":"A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks","authors":"Song Hang Chai;Hyunsu Chae;Hao Yu;David Z. Pan;Sensen Li","doi":"10.1109/LMWT.2025.3566666","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3566666","url":null,"abstract":"This work presents a high-efficiency D-band power amplifier (PA) implemented in 250-nm indium phosphide (InP) technology. A key innovation is the integration of artificial intelligence (AI) into the radio frequency power amplifier (RFPA) design flow for the automated generation of passive networks—a traditionally labor- and computation-intensive process. By utilizing a machine learning (ML) model as a surrogate for time-consuming electromagnetic (EM) solvers, this approach enables rapid exploration of a broader design space, improving productivity and uncovering potentially nonintuitive structures. The physics augmentation in the ML model mitigates its dependence on big training datasets, achieving an <italic>S</i>-parameter prediction error of less than 0.5 dB at the target frequency of 125 GHz. Using fully AI-generated passive networks, the PA delivers a saturated output power (<inline-formula> <tex-math>${P} _{text {sat}}$ </tex-math></inline-formula>) of 15.3 dBm and a peak power-added efficiency (PAE) of 26%. Additionally, it achieves a peak gain of 12.7 dB and a 3-dB bandwidth spanning 110–140 GHz and demonstrates its capability to support high-order quadrature amplitude modulation (QAM) signals at tens of Gb/s data rates.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"824-827"},"PeriodicalIF":0.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Ka-Band Four-Antenna Four-Simultaneous Beams Transmitter for Phased Array Applications in 55-nm CMOS 一种用于55纳米CMOS相控阵应用的紧凑型ka波段四天线四同步波束发射器
IEEE microwave and wireless technology letters Pub Date : 2025-03-26 DOI: 10.1109/LMWT.2025.3547936
Bin Li;Xiaodong Cui;Hanyang Luo;Shubo Dun;Geliang Yang
{"title":"A Compact Ka-Band Four-Antenna Four-Simultaneous Beams Transmitter for Phased Array Applications in 55-nm CMOS","authors":"Bin Li;Xiaodong Cui;Hanyang Luo;Shubo Dun;Geliang Yang","doi":"10.1109/LMWT.2025.3547936","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3547936","url":null,"abstract":"This letter presents a Ka-band four-antenna transmitter supporting four simultaneous beams for phased array applications. To alleviate the design challenge of large chip area caused by the multibeam splitting and to facilitate array design, the architecture of the transmitter features a compact passive multibeam splitting network (MBSN) combined with a modified gm-based phase shifter (PS) array. Implemented in a 55-nm CMOS process, the transmitter consumes a current of 760 mA with a 1.2-V supply. From 27 to 31 GHz, the transmitter achieves a 360° phase shifting range with a 6-bit resolution, and the root mean square (rms) phase and gain errors are less than 3° and 0.5 dB, respectively. The full transmit path achieves a gain of 21 dB with less than ±1-dB variation and an output-referred 1-dB gain compression point (OP<inline-formula> <tex-math>$_{1,text {dB}}$ </tex-math></inline-formula>) of >2 dBm. The chip size, including pads, is only <inline-formula> <tex-math>$2.7times 3.6$ </tex-math></inline-formula> mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"738-741"},"PeriodicalIF":0.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 335-GHz Subharmonic Quadrature Mixer MMIC Based on GaAs Schottky Diode Technology 基于GaAs肖特基二极管技术的335 ghz亚谐波正交混频器MMIC
IEEE microwave and wireless technology letters Pub Date : 2025-03-26 DOI: 10.1109/LMWT.2025.3551334
Songzhuo Liu;Gang Gao;Bin Niu;Weihua Yu
{"title":"A 335-GHz Subharmonic Quadrature Mixer MMIC Based on GaAs Schottky Diode Technology","authors":"Songzhuo Liu;Gang Gao;Bin Niu;Weihua Yu","doi":"10.1109/LMWT.2025.3551334","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551334","url":null,"abstract":"This letter presents a 335-GHz quadrature mixer with monolithic microwave integrated circuit (MMIC) utilizing the GaAs Schottky diode technology. By using two identical double-sideband (DSB) subharmonic mixer units and a 90° phase shift line co-designed with an on-chip double-RF probe, a quadrature phase relationship downconversion is achieved on a single GaAs chip. The conversion loss of the mixer is approximately 16 dB in the 330–350-GHz frequency range. The amplitude imbalance is less than 3 dB within the 333–342-GHz range, while the phase imbalance is less than 10° in the 330–340-GHz range. The quadrature mixer exhibits a reasonable performance with an MMIC structure and the smallest chip area compared with mixers made by two substrates.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"714-717"},"PeriodicalIF":0.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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