Xin Fang;Yuan Chun Li;Zhentian Wu;Lixia Yang;Hao-Ran Zhu;Zhixiang Huang
{"title":"Dual-Mode Cavity Filter With Reconfigurable Bandwidth and Frequency","authors":"Xin Fang;Yuan Chun Li;Zhentian Wu;Lixia Yang;Hao-Ran Zhu;Zhixiang Huang","doi":"10.1109/LMWT.2025.3549761","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3549761","url":null,"abstract":"A frequency- and bandwidth-tunable filter based on dual-mode movable microstrip-cavity structure is proposed in this letter. The TE101 and TE011 modes of the cavity are employed as the resonant modes. To realize frequency and absolute bandwidth (ABW) tunings, a microstrip feeding line with a movable metal ground is introduced. By moving the metal ground, the external couplings of the two modes are controlled simultaneously. Dielectric posts are inserted into the cavity to independently change the frequencies of the two modes. In this approach, a dual-mode filter with reconfigurable frequency and ABW is obtained using single-cavity resonator. From the measurement, over the frequency tuning range from 8.5 to 10 GHz, variable ABWs are achieved and the insertion loss is kept below 1 dB in the tuning procedure. Hence, the proposed design possesses high-performance filtering response and wide tuning ranges, making it competitive in the multiband radio frequency (RF) front end.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"662-665"},"PeriodicalIF":0.0,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comments on “Two-Layer Three-Way Horst Power Divider and Combiner Based on Microstrip Line With Fixed Characteristic Impedance”","authors":"Myun-Joo Park","doi":"10.1109/LMWT.2025.3545729","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3545729","url":null,"abstract":"It is shown that the analysis by Zerfaine et al. (2023) is based on the incorrect <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> expression and leads to erroneous results. The <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> errors are proved through the exact solution of the analysis equations by Zerfaine et al. (2023) and the correct <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> expression is provided.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"754-755"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Filtering Ultra-Low-Noise Amplifier Based on HISL Platform for Ku-Band Satellite Communication","authors":"Yuhao Hu;Kaixue Ma;Yongqiang Wang;Yi Wu","doi":"10.1109/LMWT.2025.3553095","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553095","url":null,"abstract":"This letter presents a filtering low-noise amplifier (LNA) based on novel hybrid integrated suspended line (HISL) platform for <italic>Ku</i>-band satellite communication (SATCOM). Based on the equivalent model established to characterize the optimal noise impedance of the used transistor, a bandpass filtering input matching network (IMN) is designed using the terminated coupled line structure (TCLS). Good noise matching of the entire passband is achieved due to the equivalent model-based design method. High out-of-band rejection is achieved due to multiple controllable transmission zeros (TZs) generated by TCLS, which greatly improves the flexibility and scalability of design. According to the measured results, the proposed LNA achieves a maximum gain of 25.3dB and an ultralow noise of 0.611.06dB from 9.2 to 13.1GHz. The rejection level is larger than 69 and 56dBc for the lower and higher bands, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"718-721"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jinghang Qin;Wenbo Liu;Dawei Yin;Tao Wang;Tianqi Wang;Yang Liu
{"title":"A Frequency Selective High-Efficiency Broadband RF Rectifier Using Dual-Branch Structure","authors":"Jinghang Qin;Wenbo Liu;Dawei Yin;Tao Wang;Tianqi Wang;Yang Liu","doi":"10.1109/LMWT.2025.3552401","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552401","url":null,"abstract":"This letter proposes a broadband, high-efficiency radio frequency (RF) rectifier with a frequency selective topology and simple structure for wireless power transmission (WPT). The rectifier comprises two subrectifying units, without any additional matching circuits at the input end. Using its frequency selective topology, the two subrectifying units operate in the low- and high-frequency bands, respectively, ensuring efficiency and expanding the operating bandwidth. The design was validated through fabrication, and the measured results align closely with simulation data. Measurements indicate a fractional bandwidth of 84.4% (1.3–3.2 GHz), with a power conversion efficiency (PCE) exceeding 60%, peaking at 71% at an input power of 8 dBm. The efficiency remains above 50% across the 1.3–3.3-GHz range at an input power of 5 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"654-657"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Virtual Magnetic Wall and Its Application in Half-Mode Cavity Resonators","authors":"Zhengjun Du;Jin Pan;Ma Boyuan","doi":"10.1109/LMWT.2025.3551800","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551800","url":null,"abstract":"This letter presents a novel methodology for the design and evaluation of virtual magnetic walls (VMWs), specifically tailored for half-mode (HM) cavity resonators. The proposed method overcomes the limitation of small open apertures (OAs) with aspect ratios (ARs) exceeding 10, which is common in traditional HM designs. The approach results in a 37% reduction in both volume and weight compared to traditional full-mode (FM) counterparts. Due to their compact and lightweight nature, HM cavity resonators are particularly well-suited for the development of bandpass filters (BPFs). A four-pole HM BPF was designed, fabricated, and measured. Experimental results confirm the effectiveness of the proposed design and highlight its practical advantages in improving stopband selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"646-649"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park
{"title":"Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance","authors":"Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park","doi":"10.1109/LMWT.2025.3553444","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553444","url":null,"abstract":"In this study, we design a CMOS wideband low-noise amplifier (LNA) with staggered tuning technique. In a wideband LNA, a design technique that can secure the gain flatness using <italic>RC</i> feedback and inductor for resonance is proposed. The common-source (CS) structure with an <italic>RC</i> feedback and an inductor is analyzed using equivalent circuits, and it was verified that the gain could be flattened by adjusting the resonance frequency and the resistance of the <italic>RC</i> feedback. In addition, a high-pass filter (HPF) structure and an adaptive bias circuit (ABC) are applied to obtain a reasonable noise figure (NF) and linearity in a wide frequency range. A designed wideband LNA is fabricated using 65-nm RFCMOS process. As a measured result, the 1-dB bandwidth is approximately 15.6GHz from 20.1 to 35.7GHz. The 3-dB bandwidth is measured at 18.4 GHz. In the range of 25–35 GHz, the NF is lower than 3.45 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"722-725"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array","authors":"Po-Yuan Chen;Hong-Yeh Chang","doi":"10.1109/LMWT.2025.3552410","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552410","url":null,"abstract":"In this letter, a <italic>Q</i>-band ultralow jitter subharmonically injection-locked frequency quadrupler (SILFQ) with frequency-tracking loop (FTL) and 2-bit switched-capacitor array (SCA) is proposed using 90-nm CMOS process. To comprehensively enhance the overall performance of local oscillator (LO) generation, the proposed SILFQ not only employs FTL to adaptively control the locking mechanism over variations but also integrates an unprecedented combination of SCA and frequency multiplier to effectively broaden the overall locking range. The proposed SILFQ with SCA demonstrates a measured locking range of 6.4 GHz. With FTL, the measured phase noise at 1-MHz offset and root-mean-square (rms) jitter integrated from 1 kHz to 40 MHz are −128.8 dBc/Hz and 10.1 fs, respectively. The jitter degradation between injection and output signal is merely within 4 fs. The dc power consumption is 37.4 mW, with a differential output power of −2 dBm and a compact chip size of 0.7 mm<sup>2</sup>. Featuring several excellent figure of merits (FoMs), this design is well-suited for advanced millimeter-wave (mm-wave) applications due to its superior circuit performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"864-867"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager
{"title":"AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers","authors":"Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager","doi":"10.1109/LMWT.2025.3552495","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552495","url":null,"abstract":"This article presents a deep-learning-based approach for designing Class F power amplifiers (PAs). We use convolutional neural networks (CNNs) to predict the scattering parameters of pixelated electromagnetic (EM) layouts. Using a CNN-based surrogate model and an evolutionary algorithm, we synthesize complex Class F output networks. As a proof of concept, we implement a gallium nitride (GaN) HEMT Class F PA, achieving a measured output power of 41.6 dBm and a drain efficiency of 74% at 2.9 GHz. The prototype also linearly reproduces a 20-MHz modulated signal with an 8.5-dB peak-to-average power ratio (PAPR), achieving an adjacent channel leakage ratio (ACLR) of −50.7 dBc with digital predistortion (DPD). To the best of our knowledge, this is the first deep-learning-based Class F PA design using pixelated layout structures.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"690-693"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10948016","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin
{"title":"Tunable Loss Reflectionless Filtering Attenuator With Ultrawide Bandwidth and Extended Tunable Attenuation Range","authors":"Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin","doi":"10.1109/LMWT.2025.3551311","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551311","url":null,"abstract":"In this letter, a novel tunable loss reflectionless filtering attenuator with ultrawide bandwidth and extended tunable attenuation range is proposed for the first time. The ultrawide bandwidth benefits from the application of unequal-width three-coupled line structures. In order to achieve both in-band and out-of-band reflectionless performance, a pair of absorptive sections are loaded at both ports to eliminate out-of-band reflections. Moreover, the unequal-width three-coupled line structure loaded by p-i-n diodes is utilized to realize a wide tunable attenuation range. For demonstration, an ultrawideband (UWB) reflectionless filtering attenuator prototype is fabricated, where the measured results agree well with the corresponding simulations. The measured results show that the reflectionless filtering attenuator features a fractional bandwidth of 104.9% and can realize the attenuation of 2.5–26.4 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"666-669"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li
{"title":"Subwavelength 8 × 8 Butler Matrix With Pixel Metamaterial for Space Limited Systems","authors":"Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li","doi":"10.1109/LMWT.2025.3552854","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552854","url":null,"abstract":"In this letter, a subwavelength <inline-formula> <tex-math>$8times 8$ </tex-math></inline-formula> Butler matrix (BM) with inverse-designed pixel metamaterial is proposed for space limited systems. With inverse-designed metamaterial, the broadband asymmetric 3-dB couplers with arbitrary phase difference are constructed, which eliminates the space for phase delay lines in BM, significantly reducing the overall size. Finally, a prototype of the proposed BM is fabricated and measured, which exhibits a bandwidth of 21.6% by occupying a compact size of <inline-formula> <tex-math>$0.95lambda _{0}times 0.70lambda _{0}times 0.01lambda _{0}$ </tex-math></inline-formula>. With a subwavelength scale, the proposed ultracompact BM can be easily integrated with antenna array for applications in compact multibeam systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"642-645"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}