Zhenghua Wei;Qiang Liu;Guangxing Du;Guolin Li;Wang Liu
{"title":"增强带宽的高效扩展连续模逆gf类功率放大器的设计","authors":"Zhenghua Wei;Qiang Liu;Guangxing Du;Guolin Li;Wang Liu","doi":"10.1109/LMWT.2025.3559999","DOIUrl":null,"url":null,"abstract":"This letter provides an extended continuous-mode inverse class-GF (ECCGF<sup>−1</sup>) concise theory for the design of a high-efficiency power amplifier (PA) with enhanced bandwidth. Compared with the typical continuous-mode inverse class-GF (CCGF<sup>−1</sup>), a broader design space considering input nonlinearity is explored by simplified formulas based on the harmonic components of the drain current in class-GF<sup>−1</sup>. Moreover, the problem of current overshoot can be alleviated in ECCGF<sup>−1</sup>. For verification, a prototype is designed and fabricated by using a 10-W GaN HEMT device. The measured results show that the output power of 39.8–42.2 dBm, drain efficiency (DE) of 61%–78.6%, and gain of 9.8–12.2 dB are achieved over the relative bandwidth (RBW) of 136.8% from 0.6 to 3.2 GHz. In contrast with the other types of PA, the design exhibits a wider bandwidth and comparable efficiency.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1041-1044"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a High-Efficiency Extended Continuous-Mode Inverse Class-GF Power Amplifier With Enhanced Bandwidth\",\"authors\":\"Zhenghua Wei;Qiang Liu;Guangxing Du;Guolin Li;Wang Liu\",\"doi\":\"10.1109/LMWT.2025.3559999\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter provides an extended continuous-mode inverse class-GF (ECCGF<sup>−1</sup>) concise theory for the design of a high-efficiency power amplifier (PA) with enhanced bandwidth. Compared with the typical continuous-mode inverse class-GF (CCGF<sup>−1</sup>), a broader design space considering input nonlinearity is explored by simplified formulas based on the harmonic components of the drain current in class-GF<sup>−1</sup>. Moreover, the problem of current overshoot can be alleviated in ECCGF<sup>−1</sup>. For verification, a prototype is designed and fabricated by using a 10-W GaN HEMT device. The measured results show that the output power of 39.8–42.2 dBm, drain efficiency (DE) of 61%–78.6%, and gain of 9.8–12.2 dB are achieved over the relative bandwidth (RBW) of 136.8% from 0.6 to 3.2 GHz. In contrast with the other types of PA, the design exhibits a wider bandwidth and comparable efficiency.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 7\",\"pages\":\"1041-1044\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10980162/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10980162/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文提供了一个扩展的连续模式反类- gf (ECCGF−1)简明理论,用于设计具有增强带宽的高效功率放大器(PA)。与典型的连续模逆变型gf (CCGF−1)相比,通过基于gf−1类漏极电流谐波分量的简化公式,探索了考虑输入非线性的更广阔设计空间。此外,在ECCGF−1中可以缓解电流过调的问题。为了验证,使用10 w GaN HEMT器件设计和制造了原型。测量结果表明,在0.6 ~ 3.2 GHz的相对带宽(RBW)为136.8%的范围内,输出功率为39.8 ~ 42.2 dBm,漏极效率(DE)为61% ~ 78.6%,增益为9.8 ~ 12.2 dB。与其他类型的PA相比,该设计具有更宽的带宽和相当的效率。
Design of a High-Efficiency Extended Continuous-Mode Inverse Class-GF Power Amplifier With Enhanced Bandwidth
This letter provides an extended continuous-mode inverse class-GF (ECCGF−1) concise theory for the design of a high-efficiency power amplifier (PA) with enhanced bandwidth. Compared with the typical continuous-mode inverse class-GF (CCGF−1), a broader design space considering input nonlinearity is explored by simplified formulas based on the harmonic components of the drain current in class-GF−1. Moreover, the problem of current overshoot can be alleviated in ECCGF−1. For verification, a prototype is designed and fabricated by using a 10-W GaN HEMT device. The measured results show that the output power of 39.8–42.2 dBm, drain efficiency (DE) of 61%–78.6%, and gain of 9.8–12.2 dB are achieved over the relative bandwidth (RBW) of 136.8% from 0.6 to 3.2 GHz. In contrast with the other types of PA, the design exhibits a wider bandwidth and comparable efficiency.