{"title":"具有可变增益控制的26.5 - 38 ghz ka波段GaN-on-Si低噪声放大器","authors":"Zhihao Zhang;Jinfeng Chen;Kai Yu;Tong Wang;Gary Zhang","doi":"10.1109/LMWT.2025.3563801","DOIUrl":null,"url":null,"abstract":"A broadband 26.5–38-GHz low-noise amplifier (LNA) with variable gain (VG) functionality, utilizing 100-nm gallium nitride on silicon (GaN-on-Si) process for Ka-band, is proposed. To achieve adjustable gain while minimizing noise degradation within a controllable range, a structured design procedure for device periphery and bias condition is introduced. Furthermore, a hybrid matching methodology combining low-pass and high-pass networks with a dual feedback loop in the last two stages is implemented for bandwidth enhancement. A 3-bit digital Si-CMOS controller is incorporated to modulate the gate bias of the GaN amplifier. Operating at 5 V with a quiescent current (<inline-formula> <tex-math>$I_{\\mathrm {DQ}}$ </tex-math></inline-formula>) of 60 mA, the fabricated VG-LNA exhibits the measured gain of 26.9–29.9 dB, noise figure (NF) of 1.57–2.83 dB, and output power at 1-dB compression point (<inline-formula> <tex-math>$\\text{OP}_{\\mathrm {1 ~dB}}$ </tex-math></inline-formula>) of 9.2–16.5 dBm across 26.5–38 GHz. A reduction in <inline-formula> <tex-math>$I_{\\mathrm {DQ}}$ </tex-math></inline-formula> from 100 to 20 mA results in a decline in peak gain from 31 to 24.1 dB at 28 GHz, accompanied by an increase in the minimum NF from 1.57 to 2.03 dB, and a decrease in the maximum <inline-formula> <tex-math>$\\text{OP}_{\\mathrm {1~dB}}$ </tex-math></inline-formula> from 18 to 14.8 dBm. To the best of our knowledge, this is the first demonstration of a GaN LNA with VG control feature.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1214-1217"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 26.5–38-GHz Ka-Band GaN-on-Si Low-Noise Amplifier With Variable Gain Control\",\"authors\":\"Zhihao Zhang;Jinfeng Chen;Kai Yu;Tong Wang;Gary Zhang\",\"doi\":\"10.1109/LMWT.2025.3563801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband 26.5–38-GHz low-noise amplifier (LNA) with variable gain (VG) functionality, utilizing 100-nm gallium nitride on silicon (GaN-on-Si) process for Ka-band, is proposed. To achieve adjustable gain while minimizing noise degradation within a controllable range, a structured design procedure for device periphery and bias condition is introduced. Furthermore, a hybrid matching methodology combining low-pass and high-pass networks with a dual feedback loop in the last two stages is implemented for bandwidth enhancement. A 3-bit digital Si-CMOS controller is incorporated to modulate the gate bias of the GaN amplifier. Operating at 5 V with a quiescent current (<inline-formula> <tex-math>$I_{\\\\mathrm {DQ}}$ </tex-math></inline-formula>) of 60 mA, the fabricated VG-LNA exhibits the measured gain of 26.9–29.9 dB, noise figure (NF) of 1.57–2.83 dB, and output power at 1-dB compression point (<inline-formula> <tex-math>$\\\\text{OP}_{\\\\mathrm {1 ~dB}}$ </tex-math></inline-formula>) of 9.2–16.5 dBm across 26.5–38 GHz. A reduction in <inline-formula> <tex-math>$I_{\\\\mathrm {DQ}}$ </tex-math></inline-formula> from 100 to 20 mA results in a decline in peak gain from 31 to 24.1 dB at 28 GHz, accompanied by an increase in the minimum NF from 1.57 to 2.03 dB, and a decrease in the maximum <inline-formula> <tex-math>$\\\\text{OP}_{\\\\mathrm {1~dB}}$ </tex-math></inline-formula> from 18 to 14.8 dBm. To the best of our knowledge, this is the first demonstration of a GaN LNA with VG control feature.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 8\",\"pages\":\"1214-1217\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10980629/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10980629/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 26.5–38-GHz Ka-Band GaN-on-Si Low-Noise Amplifier With Variable Gain Control
A broadband 26.5–38-GHz low-noise amplifier (LNA) with variable gain (VG) functionality, utilizing 100-nm gallium nitride on silicon (GaN-on-Si) process for Ka-band, is proposed. To achieve adjustable gain while minimizing noise degradation within a controllable range, a structured design procedure for device periphery and bias condition is introduced. Furthermore, a hybrid matching methodology combining low-pass and high-pass networks with a dual feedback loop in the last two stages is implemented for bandwidth enhancement. A 3-bit digital Si-CMOS controller is incorporated to modulate the gate bias of the GaN amplifier. Operating at 5 V with a quiescent current ($I_{\mathrm {DQ}}$ ) of 60 mA, the fabricated VG-LNA exhibits the measured gain of 26.9–29.9 dB, noise figure (NF) of 1.57–2.83 dB, and output power at 1-dB compression point ($\text{OP}_{\mathrm {1 ~dB}}$ ) of 9.2–16.5 dBm across 26.5–38 GHz. A reduction in $I_{\mathrm {DQ}}$ from 100 to 20 mA results in a decline in peak gain from 31 to 24.1 dB at 28 GHz, accompanied by an increase in the minimum NF from 1.57 to 2.03 dB, and a decrease in the maximum $\text{OP}_{\mathrm {1~dB}}$ from 18 to 14.8 dBm. To the best of our knowledge, this is the first demonstration of a GaN LNA with VG control feature.