紧凑型3.5-11-GHz VGA,在130纳米SiGe BiCMOS中具有32db增益调谐范围

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Xu Wang;Kaixue Ma;Yuefeng Hou;Kejie Hu
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引用次数: 0

摘要

本文介绍了一种在130纳米SiGe BiCMOS工艺中实现的具有大增益调谐范围和低相位误差的紧凑型超宽带可变增益放大器(VGA)。首先,采用基于rlc的串联反馈技术(SRFT)有效地扩展带宽,并与无源开关衰减器相结合,以较少的电感实现大的增益调谐范围。其次,在级间引入相位补偿电感,以减小不同增益状态下的相位变化。本设计在3.5-11 GHz工作频段实现了32db增益调谐范围和1db增益步进,核心区面积仅为0.47 mm2。增益平坦度小于1 dB,工作频带的最大均方根相位误差为3.9°。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Compact 3.5–11-GHz VGA With 32-dB Gain Tuning Range in 130-nm SiGe BiCMOS
This letter presents a compact ultrawideband variable gain amplifier (VGA) with large gain tuning range and low phase error implemented in 130-nm SiGe BiCMOS process. First, the series RLC-based feedback technique (SRFT) is used to efficiently expand the bandwidth, which is combined with inductorless passive switching attenuators to realize large gain tuning range with less inductors. Next, the phase compensation inductor is introduced between stages to decrease phase variation under different gain states. This design achieves 32-dB gain tuning range with 1-dB gain step in the operation band of 3.5–11 GHz, and the core area is only 0.47 mm2. The gain flatness is less than 1 dB, and the maximum rms phase error is 3.9° in the operation band.
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