一种基于单片d模氮化镓的降压变换器,具有新型的电阻-电容复用死区调整结构,用于包络跟踪功率放大器

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Chunyue Bo;Chenhao Li;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo
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引用次数: 0

摘要

本文报道了一种采用全耗尽模式(d模式)氮化镓(GaN) hemt的单片高效降压变换器,该变换器集成了死区产生驱动电路和功率级。提出了一种新的电阻-电容多路复用(RCM)结构,其中电阻具有上拉和死区调整的功能,电容具有移电平和死区调整的功能。因此,可以在不引入额外并联电容器的情况下调整死区时间,使RCM结构能够锐化功率级栅极信号的上升沿和下降沿,从而提高开关频率和效率。该降压达到90.7%的峰值效率,在112.5 MHz的开关频率下提供11.6 W的输出功率。该电路提供功率放大器作为包络跟踪电源调制器,用于验证包络跟踪功率放大器的可靠性。与固定电源电压的PA相比,ET-PA的总效率提高了14.3%。据作者所知,这是第一个带有集成死区时间发生器的单片全d模式gan -based buck的报告。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Monolithic D-Mode GaN-Based Buck Converter With Novel Resistor–Capacitor-Multiplexing Dead-Time Adjustment Structure for Envelope-Tracking Power Amplifier Application
This letter reports a monolithic high-efficiency buck converter using all depletion-mode (d-mode) gallium nitride (GaN) HEMTs which integrates a dead-time generating driving circuit and a power stage. A novel resistor-capacitor-multiplexing (RCM) structure is proposed, where the resistor functions for both pull-up and dead-time adjustment, and the capacitor is used for both level-shifting and dead-time adjustment. Therefore, dead-time can be adjusted without introducing additional paralleled capacitors, enabling the RCM structure to sharpen the rising and falling edge of the power stage’s gate signal, thereby improving both switching frequency and efficiency. This buck achieves a peak efficiency of 90.7%, delivering an output power reaching 11.6 W at a switching frequency of 112.5 MHz. A power amplifier (PA) is supplied by the proposed circuit serving as an envelope-tracking supply modulator (ETSM) for the verification of envelope-tracking power amplifier(ET-PA). The overall efficiency of the ET-PA was increased by 14.3% compared with the PA with fixed supply voltage. To the best of the authors’ knowledge, this is the first report of a monolithic all-d-mode-GaN-based buck with an integrated dead-time generator.
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