{"title":"融合Leontovich边界条件和标量二维有限元法计算h平面波导器件的盖子和侧壁损耗","authors":"Hui Jiang;Juan Córcoles;Jorge A. Ruiz-Cruz","doi":"10.1109/LMWT.2025.3557266","DOIUrl":null,"url":null,"abstract":"This letter introduces a 2-D finite-element method (FEM) for <italic>H</i>-plane waveguide devices, initially formulated for the ideal lossless case and then extended to include conductor losses. A scalar formulation naturally incorporates the Leontovich boundary condition on both the lid and lateral walls, with a first-order wavenumber correction at the lid walls and an additional matrix for lateral wall losses. Numerical results including an inductive filter and a K-band diplexer show excellent agreement with both analytic (when possible) and commercial software simulations based on 3D-FEM, confirming the method’s accuracy and efficiency for practical waveguide device analysis and design.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"764-767"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fusing Leontovich Boundary Conditions and Scalar 2-D FEM to Compute Lid and Lateral Wall Losses in H-Plane Waveguide Devices\",\"authors\":\"Hui Jiang;Juan Córcoles;Jorge A. Ruiz-Cruz\",\"doi\":\"10.1109/LMWT.2025.3557266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter introduces a 2-D finite-element method (FEM) for <italic>H</i>-plane waveguide devices, initially formulated for the ideal lossless case and then extended to include conductor losses. A scalar formulation naturally incorporates the Leontovich boundary condition on both the lid and lateral walls, with a first-order wavenumber correction at the lid walls and an additional matrix for lateral wall losses. Numerical results including an inductive filter and a K-band diplexer show excellent agreement with both analytic (when possible) and commercial software simulations based on 3D-FEM, confirming the method’s accuracy and efficiency for practical waveguide device analysis and design.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"764-767\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10969515/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10969515/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fusing Leontovich Boundary Conditions and Scalar 2-D FEM to Compute Lid and Lateral Wall Losses in H-Plane Waveguide Devices
This letter introduces a 2-D finite-element method (FEM) for H-plane waveguide devices, initially formulated for the ideal lossless case and then extended to include conductor losses. A scalar formulation naturally incorporates the Leontovich boundary condition on both the lid and lateral walls, with a first-order wavenumber correction at the lid walls and an additional matrix for lateral wall losses. Numerical results including an inductive filter and a K-band diplexer show excellent agreement with both analytic (when possible) and commercial software simulations based on 3D-FEM, confirming the method’s accuracy and efficiency for practical waveguide device analysis and design.