融合Leontovich边界条件和标量二维有限元法计算h平面波导器件的盖子和侧壁损耗

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Hui Jiang;Juan Córcoles;Jorge A. Ruiz-Cruz
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引用次数: 0

摘要

这封信介绍了h平面波导器件的二维有限元方法(FEM),最初是为理想的无损情况制定的,然后扩展到包括导体损耗。标量公式自然地结合了盖子和侧壁上的莱昂托维奇边界条件,在盖子壁上进行了一阶波数校正,并为侧壁损失添加了一个额外的矩阵。包括电感滤波器和k波段双工器在内的数值结果与基于3D-FEM的解析(在可能的情况下)和商业软件仿真结果非常吻合,证实了该方法在实际波导器件分析和设计中的准确性和有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fusing Leontovich Boundary Conditions and Scalar 2-D FEM to Compute Lid and Lateral Wall Losses in H-Plane Waveguide Devices
This letter introduces a 2-D finite-element method (FEM) for H-plane waveguide devices, initially formulated for the ideal lossless case and then extended to include conductor losses. A scalar formulation naturally incorporates the Leontovich boundary condition on both the lid and lateral walls, with a first-order wavenumber correction at the lid walls and an additional matrix for lateral wall losses. Numerical results including an inductive filter and a K-band diplexer show excellent agreement with both analytic (when possible) and commercial software simulations based on 3D-FEM, confirming the method’s accuracy and efficiency for practical waveguide device analysis and design.
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