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Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3526625
Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi
{"title":"Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems","authors":"Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi","doi":"10.1109/LMWT.2025.3526625","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526625","url":null,"abstract":"Existing method to linearize PAs in multiple-input multiple-output (MIMO) systems either rely on deploying over-the-air (OTA) antenna arrays in the far-field or neglect the effects of interchannel. To address these issues, this letter proposes a two-stage digital predistortion (DPD) approach with neural-network (NN)-assisted virtual beamforming (VB) for interchannel effects in MIMO systems. The main DPD compensates for distortion of PAs, while the sub-DPD compensates for distortion of the interchannel effects. An experimental test was performed using a uniform linear array (ULA) at 3.5 GHz. Based on experimental results, the proposed method achieves up to 5.37-dBc improvement in adjacent channel power ratio (ACPR), closely replicates the linearization performance of OTA, and eliminates the need for remote OTA deployment.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"346-349"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3527522
Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su
{"title":"A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology","authors":"Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su","doi":"10.1109/LMWT.2025.3527522","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527522","url":null,"abstract":"In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"330-333"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2024.3525340
Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei
{"title":"A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology","authors":"Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei","doi":"10.1109/LMWT.2024.3525340","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525340","url":null,"abstract":"In this letter, a high-efficiency 485–525 GHz frequency balanced tripler using three-port matching technology (TPMT) is reported. In comparison to traditional balanced tripler, the TPMT uses an on-chip capacitor connected to a biased microstrip line (Ms) at the bias port, which not only provides dc and RF isolation but also functions as part of the diode matching. The impedance of bias port participates in the matching process of the diode, effectively reducing the parasitic effect associated with the on-chip capacitance and thereby enhancing the efficiency of the tripler. In addition, this study adopts the on-chip power combining technology to improve the power handling capability of the frequency tripler and minimize the effects of assembly errors. At room temperature, the measured results show that the tripler has an efficiency of 4.2%–13.42% over the 485–525 GHz band at 70–172-mW input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"302-305"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526823
Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang
{"title":"Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang","doi":"10.1109/LMWT.2025.3526823","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526823","url":null,"abstract":"In this letter, a novel high-performance planar balanced and single-ended dual-path (BSDP) filtering crossover is proposed, which achieves not only cross-transmission and great common-mode (CM) suppression but also enhanced isolation and frequency selectivity. The constraint rules of S-parameters are provided, and the circuit structure is simplified and analyzed based on the classical even- and odd-mode method. The freely selected electrical parameters of the BSDP crossover are considered and explored to control the filtering transmission bandwidths of the balanced path and single-ended (SE) path, independently. To verify the viability of this design, a microstrip prototype is manufactured and measured with enhanced wideband isolation and sharp filtering selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"286-289"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3527029
Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez
{"title":"Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band","authors":"Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez","doi":"10.1109/LMWT.2025.3527029","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527029","url":null,"abstract":"This letter presents for the first time an innovative waveguide structure, the multigap-waveguide (MGWG), utilizing liquid crystal (LC) technology to develop a continuously tunable phase shifter at Ka-band. In contrast to existing LC phase shifters, this design eliminates the need for polymer films or thin-film stepped impedance structures to control LC molecules. The inclusion of a gap waveguide flange ensures an individual electrical biasing of the four electrodes. The proposed design achieves a maximum differential phase of 281° in the frequency range from 24 to 38.5 GHz, with insertion losses ranging from 2.1 to 3.1 dB. The maximum figure of merit (FoM) is 105°/dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"294-297"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10843103","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526415
Konstantinos Delimaris;Grigorios P. Zouros
{"title":"Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias","authors":"Konstantinos Delimaris;Grigorios P. Zouros","doi":"10.1109/LMWT.2025.3526415","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526415","url":null,"abstract":"In this letter, the cutoff frequencies of multilayered fully anisotropic circular waveguides with metallic walls are calculated in the general case, in which the waveguide’s anisotropic material is magnetized by an external magnetic bias which is obliquely oriented with respect to the waveguide’s axis. This is a generalization of cases where the bias is aligned to the waveguide’s axis and the material features gyrotropic behavior. This problem is solvable via a coupled-field volume integral equation-cylindrical Dini series expansion (CFVIE-CDSE) method, previously used for the calculation of electromagnetic (EM) scattering by anisotropic cylinders with oblique magnetic bias, by combining formerly constructed modified tensorial Green’s functions (GFs) to account for the boundary conditions (BCs) on the metallic walls. We validate the extended CFVIE-CDSE method with the HFSS commercial software and we study a microwave application of a G-610 aluminum garnet ferrite-loaded waveguide, magnetized under oblique magnetic bias, where we compute the complex cutoff frequencies.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"266-269"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2024.3524123
Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen
{"title":"A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control","authors":"Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen","doi":"10.1109/LMWT.2024.3524123","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3524123","url":null,"abstract":"In this letter, a linearity-enhanced Doherty power amplifier (DPA) design strategy based on input second-harmonics control is proposed. By combining the load modulation process and analyzing the gain compression and phase changes caused by introducing input harmonics, suitable harmonic parameters are determined. The proposed method helps to reduce amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortion. Moreover, this method has a minimal impact on efficiency. To verify this method, a linearity-enhanced DPA is designed to operate within 3.2–3.7 GHz. Test results exhibit AM-AM distortion within 0.75 dB, AM-PM distortion within 3°, and the adjacent channel power ratio (ACPR) better than −40 dBc under 80-MHz modulated signal excitation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"350-353"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3525762
Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu
{"title":"A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology","authors":"Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu","doi":"10.1109/LMWT.2025.3525762","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3525762","url":null,"abstract":"Terahertz (THz) mixers play a paramount role in high-speed communication and high-precision detection, yet are constrained by the typical need for advanced fabrication technologies and high-power THz local oscillator (LO) pump sources. This article presents the design and implementation of a single-ended subharmonic down-conversion mixer, leveraging a gate-pumped topology that operates with low LO input frequency and power requirements. The monolithic microwave integrated circuit (MMIC) of the mixer is fabricated in a 0.1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology and mounted to form a module. The mixer module exhibits a 3-dB radio frequency (RF) bandwidth (BW) of approximately 26 GHz, covering the range from 206 to 232 GHz. The performance supports the down-conversion of a 12-Gb/s optoelectronic THz communication system, offering a promising solution for cost-effective broadband THz converters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"354-357"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3526140
Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng
{"title":"Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays","authors":"Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng","doi":"10.1109/LMWT.2025.3526140","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526140","url":null,"abstract":"The concept of parity-time (PT) symmetry, when applied in wireless power transfer (WPT) systems, helps to prevent a decrease in power delivery. In existing research on PT-symmetric WPT systems with laterally arranged multirelays, employed for expanding the lateral transfer region, only a special case has been considered for the coupling coefficient required to achieve PT symmetry. This strict special case condition increases the complexity and difficulty of implementing the system in reality. In this letter, a general condition of coupling coefficient for the PT-symmetric system with laterally arranged multirelays is analytically derived, by reducing a high-order Hamiltonian to an equivalent second-order one. The theoretical derivation is experimentally verified. An experimental system example with two relays demonstrates about a 100% increase in lateral transfer distance with stable power transfer, compared to the traditional system without relays. Our work paves the way for implementation of simpler high-order PT-symmetric systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"366-369"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3522299
Il Jun Kim;Min-Su Kim
{"title":"A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap","authors":"Il Jun Kim;Min-Su Kim","doi":"10.1109/LMWT.2024.3522299","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522299","url":null,"abstract":"This letter presents second-harmonic termination techniques for inductively source-degenerated cascode CMOS low-noise amplifiers (LNAs) with a transformer (TF)-based harmonic network. The proposed harmonic trap circuit terminates the second-order distortion generated in the common-source stage of the cascode structure, thereby improving the linearity of the LNA. In a transformed-based harmonic trap circuit, the primary inductor of the TF is used as the source-degenerated inductor for fundamental frequency gain and noise matching, and the secondary inductor along with an additional capacitor is used to terminate the second-harmonic frequency through LC resonance. The LNA is implemented using a 90-nm CMOS process and includes on-chip electrostatic discharge (ESD) protection circuits, making it suitable for commercialization. The fabricated LNA achieves a small signal gain of 18.48 dB, a noise figure (NF) of 1.1 dB, and an third input intercept point (IIP3) performance of -5.9 dBm at 2.62 GHz. The chip has an area of <inline-formula> <tex-math>$416times 879~mu $ </tex-math></inline-formula>m2 excluding the guard-ring layer, and it consumes 11.76 mW of power at a supply voltage of 1.2 V.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"338-341"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10837581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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