IEEE microwave and wireless technology letters最新文献_第2页

A 0.28 THz Super-Harmonic Self-Injection-Locked Radar for Vibration Sensing and Phase Imaging 用于振动传感和相位成像的0.28太赫兹超谐波自注入锁定雷达

IEEE microwave and wireless technology letters Pub Date : 2025-02-21 DOI: 10.1109/LMWT.2025.3542319

Wei Sun;Sidharth Thomas;Aydin Babakhani

引用次数: 0

Single-Layer High-Directivity Tight-Coupling Directional Coupler Based on Postwall CPW 基于后壁CPW的单层高指向性紧耦合定向耦合器

IEEE microwave and wireless technology letters Pub Date : 2025-02-21 DOI: 10.1109/LMWT.2025.3538502

Feiyu Ge;Hongxin Zhao;Shunli Li;Xiaoxing Yin

引用次数: 0

Miniaturized Dielectric Waveguide Bandpass Filter Using Strongly Coupled Resonator Quintuplet 基于强耦合谐振腔五元态的微型化介质波导带通滤波器

IEEE microwave and wireless technology letters Pub Date : 2025-02-20 DOI: 10.1109/LMWT.2025.3538464

Wei Qin;Wei Huang;Wen-Wen Yang;Jian-Xin Chen

引用次数: 0

A True-Differential Attenuator With Phase Error Compensation for Low-Power Phased Array Systems 低功率相控阵系统中带相位误差补偿的真差分衰减器

IEEE microwave and wireless technology letters Pub Date : 2025-02-19 DOI: 10.1109/LMWT.2025.3541885

Nengxu Zhu;Xin Zhang;Yiting Zhang;Zhen Yang;Bing Liu;Zenglong Zhao;Fanyi Meng

引用次数: 0

A 7–13-GHz Broadband High-Efficiency MMIC Power Amplifier Using Second Harmonic Inductively Tuning Network 使用二次谐波感应调谐网络的 7-13-GHz 宽带高效 MMIC 功率放大器

IEEE microwave and wireless technology letters Pub Date : 2025-02-18 DOI: 10.1109/LMWT.2025.3540466

Xiangdong Wang;Mo Li;Qiyu Wang;Liwei Luo;Yang Liu;Jian Zhang

{"title":"A 7–13-GHz Broadband High-Efficiency MMIC Power Amplifier Using Second Harmonic Inductively Tuning Network","authors":"Xiangdong Wang;Mo Li;Qiyu Wang;Liwei Luo;Yang Liu;Jian Zhang","doi":"10.1109/LMWT.2025.3540466","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3540466","url":null,"abstract":"This letter presents a three-stage 7–13-GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) power amplifier (PA) implemented in a commercial 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaAs pHEMT process. A novel second harmonic tuning method based on the RC model of the transistor is proposed for the efficiency maximization in a broadband range. In the output matching network (MNO), an inductive tuning network (ITN) is adopted to resonate with the parasitic capacitance seen from the intrinsic drain plane. With this method, the second harmonic is effectively tuned to an open-circuit state, which minimizes the overlaps of the drain current and voltage waveforms, thus greatly improving the efficiency. To achieve a broadband performance, a low-pass matching structure (LPMS) is employed to shift the matching trajectory of the fundamental impedance to nearby <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula> by compensating the reactance of the fundamental impedance with negligible effect on the tuning of the second harmonic. Over the frequency range of 7–13 GHz, the MMIC PA delivers a saturated output power (<inline-formula> <tex-math>$P_{text {SAT}}$ </tex-math></inline-formula>) of 35.0–36.5 dBm with a power-added efficiency (PAE) of 42%–47.4% in the continuous wave (CW) mode and a <inline-formula> <tex-math>${P}_{text {SAT}}$ </tex-math></inline-formula> of 35.5–36.9 dBm with a PAE of 43.8%–49.6% in the pulse mode.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"484-487"},"PeriodicalIF":0.0,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Transformation of Normalization Standard of Smith Chart for Microwave Networks With Multiple Impedance Transmission Lines 多阻抗传输线微波网络Smith图归一化标准的变换

IEEE microwave and wireless technology letters Pub Date : 2025-02-17 DOI: 10.1109/LMWT.2025.3540447

Zixuan Yi;Peipei Hu;Xue-Xia Yang;Meiling Li;Dan Zeng

引用次数: 0

Design of the SISL Waveguide Filter With Co-Designed Magnetic-Coupled SISL Resonators Using Hybrid SISL and AF-SIW Technologies 采用混合SISL和AF-SIW技术，协同设计磁耦合SISL谐振器的SISL波导滤波器设计

IEEE microwave and wireless technology letters Pub Date : 2025-02-17 DOI: 10.1109/LMWT.2025.3539694

Yun He;Kaixue Ma

引用次数: 0

Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes 基于低导通GaN肖特基势垒二极管的毫瓦和微瓦微波整流器的设计与制造

IEEE microwave and wireless technology letters Pub Date : 2025-02-14 DOI: 10.1109/LMWT.2025.3538337

Qiu-Xuan Li;Yang Li;Tao Liu;Ren-Pin Huang;Xia Zhu;Peng-Bo Liu;Xiao Wang;Zhi-Wei Chen;Jie You;Zhang-Cheng Liu;Jin-Ping Ao

{"title":"Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes","authors":"Qiu-Xuan Li;Yang Li;Tao Liu;Ren-Pin Huang;Xia Zhu;Peng-Bo Liu;Xiao Wang;Zhi-Wei Chen;Jie You;Zhang-Cheng Liu;Jin-Ping Ao","doi":"10.1109/LMWT.2025.3538337","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3538337","url":null,"abstract":"Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (<inline-formula> <tex-math>$V_{mathrm {on}}$ </tex-math></inline-formula>) of 0.32 V, a cutoff frequency (<inline-formula> <tex-math>$f_{T}$ </tex-math></inline-formula>) of 139.47 GHz, a breakdown voltage (<inline-formula> <tex-math>$V_{text {b}}$ </tex-math></inline-formula>) of 30 V, and <inline-formula> <tex-math>$f_{T} times V_{text {b}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$V_{mathrm {on}}$ </tex-math></inline-formula> figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"444-447"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uniplanar Conformal Center-Split M-Unit Cell Based SSPP Broadband Bandpass Filter for B5G Radio Stripe Networks B5G无线条纹网络中基于单平面共形中心分裂m单元的SSPP宽带带通滤波器

IEEE microwave and wireless technology letters Pub Date : 2025-02-14 DOI: 10.1109/LMWT.2025.3539017

Bhushan Ballav Pathak;Ramanand Sagar Sangam;Rakhesh Singh Kshetrimayum;Jiasheng Hong;Matthew A. Morgan

{"title":"Uniplanar Conformal Center-Split M-Unit Cell Based SSPP Broadband Bandpass Filter for B5G Radio Stripe Networks","authors":"Bhushan Ballav Pathak;Ramanand Sagar Sangam;Rakhesh Singh Kshetrimayum;Jiasheng Hong;Matthew A. Morgan","doi":"10.1109/LMWT.2025.3539017","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3539017","url":null,"abstract":"In this letter, a single-layer flexible broadband bandpass filter using spoof surface plasmon polariton (SSPP) is presented. The filter consists of center-split M-shaped unit cells arranged on either side of the central metal CPW line. In the proposed design, interdigital structures are placed in the arms of the unit cell to control the lower cutoff frequency, whereas the SSPP structures of unit cells can adjust the higher cutoff frequency. The filter has a height of <inline-formula> <tex-math>$0.002lambda _{g}$ </tex-math></inline-formula> and a volume of <inline-formula> <tex-math>$0.0052lambda _{g}^{3}$ </tex-math></inline-formula>, where <inline-formula> <tex-math>$lambda _{g}$ </tex-math></inline-formula> represents the guided wavelength at the operating bandwidth’s central frequency. The measured passband has a relative bandwidth of 59% with an insertion loss (IL) of 1.2 dB. The characteristics of the presented filter, such as low volume, flexibility, ultrathin profile, and wide bandwidth, make it an excellent contender for applications in beyond fifth-generation (5G) radio stripe networks (RSNs).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"392-395"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A High Selectivity and Steep Attenuation Integrated Passive Device On-Chip Filter With Semi-Lumped π-Type Topology and Cross-Coupling Technique 基于半集总π型拓扑和交叉耦合技术的高选择性陡衰减集成无源器件片上滤波器

IEEE microwave and wireless technology letters Pub Date : 2025-02-14 DOI: 10.1109/LMWT.2025.3538697

Hao-Ran Zhu;Wen-Tao Wang;Lv-Bo Ma;Tao Ni

引用次数: 0