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IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-03-13 DOI: 10.1109/LMWT.2025.3558176
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3558176","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3558176","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11003199","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication
IEEE microwave and wireless technology letters Pub Date : 2025-03-13 DOI: 10.1109/LMWT.2025.3558154
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2025.3558154","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3558154","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11003175","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Erratum to “A 70–89.8-GHz LNA With Transformer-Based T-Shape Matching and Pole-Tuning Techniques” “基于变压器的t形匹配和极点调谐技术的70 - 89.8 ghz LNA”的勘误
IEEE microwave and wireless technology letters Pub Date : 2025-03-12 DOI: 10.1109/LMWT.2025.3537214
Junyuan Tu;Guangyin Feng;Xiang Yi
{"title":"Erratum to “A 70–89.8-GHz LNA With Transformer-Based T-Shape Matching and Pole-Tuning Techniques”","authors":"Junyuan Tu;Guangyin Feng;Xiang Yi","doi":"10.1109/LMWT.2025.3537214","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3537214","url":null,"abstract":"Presents corrections to the paper, Erratum to “A 70–89.8-GHz LNA With Transformer-Based T-Shape Matching and Pole-Tuning Techniques”.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"374-374"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10924448","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2025-03-12 DOI: 10.1109/LMWT.2025.3540676
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2025.3540676","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3540676","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10924451","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-03-12 DOI: 10.1109/LMWT.2025.3540678
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3540678","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3540678","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10924449","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A C-Band CMOS Window-Shaped-Inductor-Based LC-VCO With Wideband Dual Common-Mode Resonance Technique 一种基于c波段窗形电感的宽带双共模谐振LC-VCO
IEEE microwave and wireless technology letters Pub Date : 2025-03-10 DOI: 10.1109/LMWT.2025.3545916
Wendi Chen;Dixian Zhao
{"title":"A C-Band CMOS Window-Shaped-Inductor-Based LC-VCO With Wideband Dual Common-Mode Resonance Technique","authors":"Wendi Chen;Dixian Zhao","doi":"10.1109/LMWT.2025.3545916","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3545916","url":null,"abstract":"This letter proposes a C-band dual-mode window-shaped-inductor-based LC-VCO using a wideband dual common-mode (CM) resonance technique. The proposed inductor with mode-switching functionality enables dual-mode operation to extend the frequency tuning range (TR). To reduce phase noise (PN), the dual CM resonance technique is employed, which provides high input impedance across the whole second harmonic band. Fabricated in a 65-nm CMOS process, the proposed oscillator exhibits 58.6% TR from 4.02 to 7.35 GHz. In <inline-formula> <tex-math>$1/f^{2}$ </tex-math></inline-formula> region, the peak PN at 10-MHz offset is −151 dBc/Hz, corresponding to a figure-of-merit (FoM) of 192.7 dBc/Hz and FoMT of 208.1 dBc/Hz. In <inline-formula> <tex-math>$1/f^{3}$ </tex-math></inline-formula> region, the VCO exhibits a low flicker PN corner of 320–370 kHz across the band. The VCO consumes about 12 mW and occupies a core area of 0.22 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"597-600"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 206–220-GHz Compact Fundamental Oscillator With up to 7-dBm Output Power and 7.4% Peak DC-to-RF Efficiency in a 130-nm SiGe Technology
IEEE microwave and wireless technology letters Pub Date : 2025-03-10 DOI: 10.1109/LMWT.2025.3546162
Arjith Chandra Prabhu;Janusz Grzyb;Marcel Andree;Holger Rücker;Ullrich R. Pfeiffer
{"title":"A 206–220-GHz Compact Fundamental Oscillator With up to 7-dBm Output Power and 7.4% Peak DC-to-RF Efficiency in a 130-nm SiGe Technology","authors":"Arjith Chandra Prabhu;Janusz Grzyb;Marcel Andree;Holger Rücker;Ullrich R. Pfeiffer","doi":"10.1109/LMWT.2025.3546162","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546162","url":null,"abstract":"This letter presents a 206.5–220.5-GHz fundamental differential Colpitts oscillator in a cascode topology implemented in a 130-nm SiGe HBT technology with <inline-formula> <tex-math>$f_{t}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f {_{max }}$ </tex-math></inline-formula> of 350/450 GHz. Base inductors at the common-base (CB) stages are used to provide an inductive load at the output of the common-emitter (CE) stage, hence, boosting the output power by 27%. The resonant tank is embedded straight on top of the devices, reducing layout parasitics and resulting in a compact and efficient oscillator core layout. The oscillator provides a peak output power of 7 dBm at 208 GHz, 7.4% peak dc-to-RF efficiency at 220 GHz, and 6.55% tuning range (TR). At peak efficiency, the oscillator delivers an output power of 5.7 dBm with 50-mW dc power consumption and a phase noise (PN) of −90.2/−110 dBc/Hz at 1-/10-MHz offset, respectively. To the best of the authors’ knowledge, the presented oscillator has the best PN figure-of-merit (FoM) of −182.1 dBc/Hz at 1-MHz offset in a SiGe/CMOS technology above 200 GHz. It occupies a total area of 0.086 mm2, including the RF pad, and an ultracompact core size of 0.0049 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"573-576"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10918680","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Scalable ANN-Based Large-Signal Model for GaN HEMTs Using Transfer Learning
IEEE microwave and wireless technology letters Pub Date : 2025-03-10 DOI: 10.1109/LMWT.2025.3546453
Lei Huang;Shuman Mao;Wenhao Zheng;Bowen Tang;Huanpeng Wang;Qingzhi Wu;Min Tang;Yuehang Xu
{"title":"A Scalable ANN-Based Large-Signal Model for GaN HEMTs Using Transfer Learning","authors":"Lei Huang;Shuman Mao;Wenhao Zheng;Bowen Tang;Huanpeng Wang;Qingzhi Wu;Min Tang;Yuehang Xu","doi":"10.1109/LMWT.2025.3546453","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546453","url":null,"abstract":"Traditional linear scaling artificial neural network (ANN)-based compact models face significant challenges in achieving high accuracy for device modeling. To overcome this limitation, a transfer-learning (TL)-assisted approach is proposed to develop a scalable ANN-based model that incorporates nonlinear scaling of intrinsic parameters. Unlike the linear scaling method, the weights and biases of the output layer are selected and non-linearly scaled for devices with varying gate widths and finger numbers through transfer learning. To effectively integrate these nonlinear scaling parameters into the model, a nonlinear regression technique is employed. The validation results demonstrate that the proposed method provides accurate characterization of both the S-parameters and large-signal performance. Notably, in power sweep evaluations, the proposed method achieves an improvement of more than 8% in power-added efficiency (PAE) accuracy compared with the conventional linear scaling approach.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"501-504"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
End-to-End Joint Optimization for PAPR Reduction and Digital Predistortion Based on Neural Network
IEEE microwave and wireless technology letters Pub Date : 2025-03-10 DOI: 10.1109/LMWT.2025.3546643
Qianqian Zhang;Renlong Han;Chengye Jiang;Junsen Wang;Hao Chang;Falin Liu
{"title":"End-to-End Joint Optimization for PAPR Reduction and Digital Predistortion Based on Neural Network","authors":"Qianqian Zhang;Renlong Han;Chengye Jiang;Junsen Wang;Hao Chang;Falin Liu","doi":"10.1109/LMWT.2025.3546643","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546643","url":null,"abstract":"The combination of crest factor reduction (CFR) and digital predistortion (DPD) can mitigate the average efficiency reduction of power amplifiers (PAs) due to high peak-to-average power ratio (PAPR) signals. A common CFR method is time-domain (TD) clipping, which causes irreversible signal impairment. To this end, an end-to-end (E2E) joint optimization method based on neural networks (NNs) is proposed in this letter. The E2E architecture consists of a transmitter network, a DPD model, and a PA model, enabling integrated processing of signal transmitted, transmission, and reception. The proposed method uses multiobjective joint optimization to reduce the PAPR of the TD signal through constellation point geometric shaping (GS) in the frequency domain, while simultaneously training the DPD model. While considering the interaction between PAPR reduction and DPD techniques, this approach can reduce PAPR without signal impairment and can allow them to work together to achieve high-quality signal transmission.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"509-512"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harmonic-Tuned Power Amplifier Using Artificial Intelligence-Assisted Topology Generation Algorithm
IEEE microwave and wireless technology letters Pub Date : 2025-03-07 DOI: 10.1109/LMWT.2025.3544730
Pei Wen Shu;Xinyu Zhou;Tushar Shama;Liheng Zhou;Wing Shing Chan
{"title":"Harmonic-Tuned Power Amplifier Using Artificial Intelligence-Assisted Topology Generation Algorithm","authors":"Pei Wen Shu;Xinyu Zhou;Tushar Shama;Liheng Zhou;Wing Shing Chan","doi":"10.1109/LMWT.2025.3544730","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544730","url":null,"abstract":"Numerical optimization techniques are widely used in microwave circuits but are limited to fixed topologies, constraining their achievable performance and suffering from suboptimal designs. This letter presents a novel topological algorithm that can automatically synthesize practical circuit layouts that can satisfy prescribed specifications without preselecting the topology. To achieve this goal, the proposed method integrates a pixelated circuit generation strategy with the differential evolution algorithm (DEA). A new objective function is also developed to match the fundamental impedances while controlling harmonic responses. Good agreement between simulation and measurements for a wideband high-efficiency power amplifier (PA) validates the proposed algorithm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"561-564"},"PeriodicalIF":0.0,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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