用于16nm FinFET工艺宽带应用的10 - 60ghz带3.2 - 4.4 db NF的LNA

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-06-19 DOI:10.1109/LMWT.2025.3577982

Ahmed Helaly;Mohammed Helal;Gabriel M. Rebeiz

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引用次数: 0

摘要

本文介绍了一种采用CMOS FinFET技术实现的10 - 60 ghz低噪声放大器（LNA）。LNA由四个增益交错级联码级组成，以覆盖宽带。采用电阻反馈和多极负载实现宽带工作。采用高耦合系数平衡器产生差分输出信号。LNA测量的小信号峰值增益为23 dB，噪声系数（NF）为3.2-4.4 dB。LNA还在该频段的中心频率处实现了0 dBm的输出参考1 db压缩点，消耗的总功率为32 mW，占用的有效面积为0.8 × 0.29~\text {mm}^{2}$。应用领域是覆盖5G多个频段的相控阵和多标准接收机。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10–60-GHz LNA With 3.2–4.4-dB NF for Wideband Applications in 16-nm FinFET Process

This letter presents a 10–60-GHz low-noise amplifier (LNA) implemented in CMOS FinFET technology. The LNA consists of four gain-staggered cascode stages to cover the wide bandwidth. Resistive feedback and multipole loads are used to achieve wideband operation. A high coupling coefficient balun is used to generate a differential output signal. The LNA has a measured small-signal peak gain of 23 dB with a noise figure (NF) of 3.2–4.4 dB. The LNA also achieves an output-referred 1-dB compression point of 0 dBm at the center frequency of the band and consumes a total power of 32 mW occupying an active area of

$0.8\times 0.29~\text {mm}^{2}$

. Application areas are phased arrays covering multiple 5G bands and multistandard receivers.

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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