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Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
IEEE microwave and wireless technology letters Pub Date : 2024-12-17 DOI: 10.1109/LMWT.2024.3514739
Junlin Mi;Ruinan Fan;Liping Yan;Yuhao Feng;Changjun Liu
{"title":"Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier","authors":"Junlin Mi;Ruinan Fan;Liping Yan;Yuhao Feng;Changjun Liu","doi":"10.1109/LMWT.2024.3514739","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514739","url":null,"abstract":"This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator (VCO). The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator (SIR). Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier (PA) operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41–2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"241-244"},"PeriodicalIF":0.0,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-Band High Intermediate-Frequency Subharmonic Mixer Utilizing a Novel T-Type Duplexer
IEEE microwave and wireless technology letters Pub Date : 2024-12-17 DOI: 10.1109/LMWT.2024.3506826
Changfei Yao;Wenjie Ma;Hao Lin
{"title":"A W-Band High Intermediate-Frequency Subharmonic Mixer Utilizing a Novel T-Type Duplexer","authors":"Changfei Yao;Wenjie Ma;Hao Lin","doi":"10.1109/LMWT.2024.3506826","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3506826","url":null,"abstract":"This letter presents the design of a W-band subharmonic mixer (SHM) featuring a novel T-type duplexer structure. The structural modifications of the duplexer effectively reduce the discontinuities and parasitic effects in the microstrip lines, enhancing the transmission performance of both the local oscillator (LO) and intermediate-frequency (IF) signals. By optimizing the internal microstrip layout of the duplexer and shortening the length (L) of the open-circuited stub, the interference of the resonance point on IF output performance is eliminated. The SHM is fabricated and tested, and the results indicate that with the LO frequency fixed at 40 GHz, the conversion loss (CL) in the radio frequency (RF) range of 89–99 GHz is between 8.1 and 14.7 dB, with a minimum CL of 8.1 dB at 90 GHz, and a high IF output frequency range of 9–19 GHz, with an effective bandwidth of 10 GHz, is achieved. The potential application is as the first-stage frequency conversion module in the downconversion chain of a W-band multichannel transceiver.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"233-236"},"PeriodicalIF":0.0,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A S-/C-Band 6-bit Passive Phase Shifter With an X-Shape Merged 180° and 90° Cell
IEEE microwave and wireless technology letters Pub Date : 2024-12-11 DOI: 10.1109/LMWT.2024.3511920
Genyin Ma;Fanyi Meng
{"title":"A S-/C-Band 6-bit Passive Phase Shifter With an X-Shape Merged 180° and 90° Cell","authors":"Genyin Ma;Fanyi Meng","doi":"10.1109/LMWT.2024.3511920","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3511920","url":null,"abstract":"This letter presents a 6-bit passive phase shifter (PS) for 3.7–5.3-GHz (S-/C-Band) phase-array communications. The PS adopts several cascaded switchable phase-shifting cells, in topologies of <inline-formula> <tex-math>$Pi $ </tex-math></inline-formula>-type, T-type, and the proposed X-shape structure. The 180° and 90° phase-shifting cells are merged and co-designed, whose switch configuration resembles the X-shape. It allows the reduction of one switch transistor and its associated insertion losses in the RF path. The proposed 6-bit PS is designed and fabricated in a 55-nm bulk CMOS. The measured results reveal an insertion loss (IL) of 8.5–9.5 dB, a root-mean-square (rms) phase error of 3.50°–5.15°, and an rms amplitude error of 0.23–0.51 dB. The chip occupies an area of 0.80 mm2 and consumes negligible power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Transistor-Based Dual-Band Rectifier With Harmonic-Controlled Dual Transmission Line
IEEE microwave and wireless technology letters Pub Date : 2024-12-11 DOI: 10.1109/LMWT.2024.3507015
Rui Zhang;Guohua Liu;Jianwei Zhou;Jiaqi Zhang
{"title":"A Transistor-Based Dual-Band Rectifier With Harmonic-Controlled Dual Transmission Line","authors":"Rui Zhang;Guohua Liu;Jianwei Zhou;Jiaqi Zhang","doi":"10.1109/LMWT.2024.3507015","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507015","url":null,"abstract":"This letter proposes a high-efficiency dual-band rectifier based on transistors, introducing a novel output-matching network that integrates harmonic control into the dual-band fundamental impedance-matching design. This approach ensures that the input impedance aligns with the dual-band fundamentals while also effectively expanding the bandwidth of the dual-band rectifier. Additionally, the dual transmission lines modulate the harmonic components of both frequencies into a purely reactive impedance, while the T-section optimizes the imaginary part of the harmonic input impedance for both frequencies. To validate the effectiveness of this method, a high-efficiency dual-band rectifier operating at 0.9 and 2.45 GHz is designed and fabricated using CGH40010F GaN HEMT. Measurement results show that at an input power of 40 dBm and a dc load of <inline-formula> <tex-math>$60~Omega $ </tex-math></inline-formula>, the rectifier achieves efficiencies of 82% at 0.9 GHz and 78% at 2.45 GHz, which maintains a bandwidth of 100 MHz. The circuit size is <inline-formula> <tex-math>$6.6times 4.6$ </tex-math></inline-formula> cm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1–5 GHz 3.5-bit GaN MMIC Variable Attenuator With 55 dB Range
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3508475
Seth Johannes;Kenneth E. Kolodziej;Zoya Popović
{"title":"1–5 GHz 3.5-bit GaN MMIC Variable Attenuator With 55 dB Range","authors":"Seth Johannes;Kenneth E. Kolodziej;Zoya Popović","doi":"10.1109/LMWT.2024.3508475","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3508475","url":null,"abstract":"This letter presents a 3.5-bit variable attenuator (VA) MMIC that operates from 1–5 GHz. The MMIC is implemented in the Qorvo 250 nm BCB2 GaN-on-SiC process. An attenuation range of 55 dB in steps of 5 dB is achieved with resistive T networks and HEMT switch devices. The bit values are implemented with 5, 10, and 20/40 networks. The 20 and 40 dB resistive networks are combined into a single network, with the attenuation level determined by a switchable shunt resistance, resulting in an additional half bit. For the desired <inline-formula> <tex-math>$10~Omega $ </tex-math></inline-formula> and <inline-formula> <tex-math>$1~Omega $ </tex-math></inline-formula> shunt resistance values of the 20 and 40 dB T networks, the <inline-formula> <tex-math>$R_{mathrm { on}}$ </tex-math></inline-formula> of the shunt switch devices are used, balancing the <inline-formula> <tex-math>$R_{mathrm { on}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$C_{mathrm { off}}$ </tex-math></inline-formula> of the device. The VA demonstrates all 11 attenuation states with a return loss better than 10 dB across all states within a 5:1 frequency range and a minimum input P1dB of 34 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Triple-Band Bandpass Filter Based on Triple-Mode Metal Block Resonators
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3509141
Jun-Jie Yan;Fu-Chang Chen;Rui-Cong Lin
{"title":"A Triple-Band Bandpass Filter Based on Triple-Mode Metal Block Resonators","authors":"Jun-Jie Yan;Fu-Chang Chen;Rui-Cong Lin","doi":"10.1109/LMWT.2024.3509141","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3509141","url":null,"abstract":"This letter presents a design methodology for triple-band bandpass filters. A triple-mode resonator comprising two metal blocks is proposed to configure the topology. Compared with the traditional triple-band cavity filters, the most noteworthy attribute of the proposed resonator is the ability to independently tune the resonance and coupling of one of the three modes, making the design procedure simple and fast. In addition, the use of metal blocks can further reduce the size of the filter. To verify the proposed design method, a third-order triple-band filter with an identical bandwidth is designed, fabricated, and measured. The measured results are in good agreement with the simulations.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"173-176"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Switched Flexible Dual-Mode Bandpass Filter Tuned by Organic Electrochemical Transistor
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3507753
Zhiliang Wang;Xiang Li;Chen Shen;Xiang Zeng;Peng Guo;Lin Qin;Zhenguo Wang
{"title":"A Switched Flexible Dual-Mode Bandpass Filter Tuned by Organic Electrochemical Transistor","authors":"Zhiliang Wang;Xiang Li;Chen Shen;Xiang Zeng;Peng Guo;Lin Qin;Zhenguo Wang","doi":"10.1109/LMWT.2024.3507753","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507753","url":null,"abstract":"A frequency tunable flexible bandpass filter (BPF) based on electrical tuning of organic electrochemical transistors (OECTs) is designed and fabricated. Microstrip BPF is prepared by screen printing technology. OECTs are integrated on the flexible filter by means of spin coating and pouring. The center frequency of the BPF can be dynamically offset from 3.48 to 3.75 GHz at a bias voltage of 1.2 V. In addition, the consistency of bending and flatness tests demonstrates the high reliability of the proposed method and the application potential in the field of wireless communication and wearable devices.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Analytical Model for Calculating the Shielding Effectiveness of Dielectric-Embedded Multilayer Metal Meshes
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3507077
Meng Chen;Xinbo He;Bing Wei
{"title":"An Analytical Model for Calculating the Shielding Effectiveness of Dielectric-Embedded Multilayer Metal Meshes","authors":"Meng Chen;Xinbo He;Bing Wei","doi":"10.1109/LMWT.2024.3507077","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507077","url":null,"abstract":"The transmission characteristics of the multilayer metal meshes are often studied using numerical methods, which consume a significant amount of computational time and hardware resources. Analytical models can quickly obtain electromagnetic properties, but currently, there are few analytical algorithms for researching dielectric-embedded multilayer metal meshes. In this letter, an analytical model for the wideband shielding effectiveness of infinite dielectric-embedded multilayer metal meshes is presented. By modifying the multiple reflection loss in the multiconductor shielding theory and the total shielding effectiveness after filling multilayer metal meshes with the dielectric, it is possible to analyze the transmission characteristics of both multilayer metal meshes and dielectric-embedded multilayer metal meshes. The results show that the modified model provides good accuracy for the shielding effectiveness of infinite multilayer metal meshes and dielectric-embedded multilayer metal meshes, which is consistent with the results of computer simulation technology (CST) in a wide frequency range. Furthermore, the calculation of the presented analytical model is less than 3000 of the numerical algorithm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"141-144"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Interlaced-Double-Ridge Waveguide Balanced Filter With Wideband CM Suppression
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3510760
Cheng-Yang Zhang;Xu Shi;Ya-Hui Zhu;Ying Xue;Jian-Xin Chen
{"title":"A Compact Interlaced-Double-Ridge Waveguide Balanced Filter With Wideband CM Suppression","authors":"Cheng-Yang Zhang;Xu Shi;Ya-Hui Zhu;Ying Xue;Jian-Xin Chen","doi":"10.1109/LMWT.2024.3510760","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3510760","url":null,"abstract":"In this letter, a novel compact balanced bandpass filter (BPF) based on an interlaced-double-ridge waveguide (IDRWG) resonator is proposed. By modifying the two ridges of the traditional double-ridge waveguide (DRWG) resonator to an interlaced-ridge structure, the IDRWG resonator achieves a lower fundamental frequency (<inline-formula> <tex-math>$f_{r0}$ </tex-math></inline-formula>), implying that a compact filter can be constructed. Here, the anti-phase property of the two interlaced ridges is maintained. Accordingly, a compact IDRWG balanced filter with low differential-mode (DM) loss can be realized. At the same time, the first harmonic (<inline-formula> <tex-math>$f_{r1}$ </tex-math></inline-formula>) of the IDRWG resonator acts as a common-mode (CM) resonance. By optimizing the dimensions of the resonator, the ratio of <inline-formula> <tex-math>$f_{r1}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f_{r0}$ </tex-math></inline-formula> can be enlarged, leading to wideband CM suppression of the balanced filter. Demonstrated results show good agreement between simulated and measured performance, with the balanced BPF centered at 2.5 GHz exhibiting about 20% bandwidth, insertion loss (IL) of <0.37>60 dB from 0 to 8.2 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"169-172"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Broadband Digital Power Amplifier With 1-dB Psat Bandwidth of 5.5–9.5 GHz
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3509422
Hao Heng;Lanxin Jia;Zonglin Ye;Kailei Wang;Qian Xie;Jun Zhou;Zheng Wang
{"title":"A Broadband Digital Power Amplifier With 1-dB Psat Bandwidth of 5.5–9.5 GHz","authors":"Hao Heng;Lanxin Jia;Zonglin Ye;Kailei Wang;Qian Xie;Jun Zhou;Zheng Wang","doi":"10.1109/LMWT.2024.3509422","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3509422","url":null,"abstract":"This letter presents a broadband digital power amplifier (DPA) with a transformer-based dual-resonant transmission line (TDRT) matching network in 65-nm complementary metal-oxide-semiconductor (CMOS). The broadband TDRT is proposed and analyzed first, and then the design flow is introduced to achieve a broadband and compact output-matching network. With the contribution of TDRT, the proposed broadband DPA delivers a saturated power of 21.2 dBm with drain efficiency of 37.6% at 7 GHz, and achieves a 1-dB bandwidth of 5.5–9.5 GHz with a fractional bandwidth of 53.3%, whose drain efficiency is 27.7%–37.6% in this frequency range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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