IEEE microwave and wireless technology letters最新文献

{"title":"Third-Order General Chebyshev LC Bandpass Filters With Two Transmission Zeros in Triplet","authors":"Likang Xiao;Fei Xiao","doi":"10.1109/LMWT.2025.3544824","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544824","url":null,"abstract":"As spectrum source is limited, more and more emerging wireless technologies require complex filtering responses for efficient spectrum allocation. In this article, direct synthesis technique (DST) we proposed is utilized to synthesize third-order general Chebyshev LC wideband bandpass filters with two transmission zeros (TZs). The TZs can be flexibly shifted, so that filter responses are easily controlled to meet different requirement. These filters are realized in the forms of crossing coupling or triplet, and each element value is analytically determined by the DST. Element values can be easily and flexibly adjusted for engineering realization. At the same time, both source and load impedances can also be flexibly adjusted, so that these filters can act as impedance transformers at the same time. These triplets could also act as the building blocks for modular synthesis of higher order filters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"513-516"},"PeriodicalIF":0.0,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of Third-Order Dual-Band BPF With a Tunable Lower Band Using Third-Harmonic Dual-Null-Points Loading Scheme on λ/4 UIR","authors":"Jing Cai;Wei Qin;Qing-Yuan Lu;Jian-Xin Chen","doi":"10.1109/LMWT.2025.3545809","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3545809","url":null,"abstract":"This letter presents a reconfigurable third-order dual-band bandpass filter (BPF) that features independent frequency tuning of a lower passband with constant absolute bandwidth (CABW) and a fixed upper passband. A combline structure using a third-harmonic (<inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>) dual-null-point semi-lumped loading scheme on quarter-wavelength (<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>/4) uniform impedance resonator (UIR) is proposed. This configuration enables frequency tuning of the lower band at fundamental frequency (<inline-formula> <tex-math>${f} _{1}$ </tex-math></inline-formula>) and the fixing of the upper band at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula> by series-loading varactors at the current null point (CNP) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. Meanwhile, the coupling coefficient of the lower band can be controlled to meet the requirements of CABW by parallel-loading lumped inductors between each two resonators and located at their voltage null points (VNPs) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. The mutual independence of parallel- and series-loading at the VNP and CNP is advantageous, as both lumped loadings do not affect the upper band entirely, including frequency and ABW. Based on these, the fabricated BPF exhibits a frequency-tuning range (TR) of 52.1% with a CABW of <inline-formula> <tex-math>$150~pm ~6$ </tex-math></inline-formula> MHz in the lower band, while the upper band maintains a fixed frequency and an ABW of 150 MHz, which shows good agreements between simulated and measured results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"517-520"},"PeriodicalIF":0.0,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unlocking Nonlinear 850-nm VCSEL Dynamics for AI Computing in Radio-Over-Fiber Networks","authors":"Siqi Wang;Jacopo Nanni;Giovanni Tartarini;Aziz Benlarbi-Delai","doi":"10.1109/LMWT.2025.3544396","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544396","url":null,"abstract":"The paradigm of joint communication and computation (J2C) is proposed to integrate artificial intelligence (AI) features within mobile front-haul infrastructures that exploit analog radio-over-fiber (ARoF) technology. The nonlinearity of a vertical cavity surface emitting laser (VCSEL)-based ARoF system is used for processing the transmitted data. In a classical communication system, the data connected at one side of the network is transmitted through the network to the other side for being processed. In this letter, we discover that nonlinear properties of VCSEL enable the neural network computing when signals are transmitted in the network, drastically reducing the computing consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"585-588"},"PeriodicalIF":0.0,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Ka-Band Gm-Boosted PS-VGA With Low Phase Variation by Main-Path Inductor Compensation","authors":"Hao Wang;Tongde Huang;Ziyi Hu;Hanzhang Cao;Jin Jin;Hongqi Tao;Wen Wu","doi":"10.1109/LMWT.2025.3544602","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544602","url":null,"abstract":"A vector-summing phase shifter (VSPS) with gm-boosted structure followed by a variable gain amplifier (VGA) with low phase variation, i.e., PS-VGA, was demonstrated at 27–31 GHz. Triple-coupling transformer (TCT) technique was employed in VSPS for gm boosting and noise reduction. A novel phase compensation technique of main-path inductor compensation (MPIC) was proposed in VGA to greatly suppress the phase variation by mitigating the impact of OFF-state drain–source capacitance (<inline-formula> <tex-math>${C} _{text {ds-}text {OFF}}$ </tex-math></inline-formula>). The fabricated PS-VGA in 65-nm 1P9M CMOS technology has achieved a 360° phase shifting range with 6-bit phase resolution and a 15.5-dB gain range with 0.5-dB gain step. The measured root-mean-square (rms) phase error for VSPS is 0.46°–1.58°. The measured rms gain error for VGA is 0.06–0.11 dB along with a phase variation of less than 3.85°. To the best of our knowledge, the measured phase variation is the lowest one for VGA with a wide gain range (>15 dB). The total power consumption of PS-VGA is 28.0 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"577-580"},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hierarchical Multistate Optimization Based on Bayesian Nested Improved Meta-Heuristic Algorithm for Reconfigurable Bandpass Filter","authors":"Jian Shi;Jiayan Gan;Jiancheng Dong;Xu Zhu;Bin Liu;Tao Yang;Sheng Wang;Jihong Shen","doi":"10.1109/LMWT.2025.3543515","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3543515","url":null,"abstract":"This letter proposes a hierarchical multistate optimization (HMO) method for the microstrip reconfigurable bandpass filter (RBPF). HMO algorithm nests the inner global optimization algorithm within the outer global optimization algorithm. The Bayesian optimization (BO) algorithm is used to optimize the outer nontunable parameters, and the improved meta-heuristic algorithm is nested to optimize the tunable parameters. The proposed optimization method was applied to two microstrip RBPFs with seven fixed parameters, four sensitive tunable variables, and three tunable states. The method achieved a 42.1%–80.2% reduction in the loss function value, thereby validating its effectiveness.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"505-508"},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A V-Band Power Amplifier With 1-dB Step Saturated Power Control for Multimode Radar Applications","authors":"Jiangbo Chen;Shengjie Wang;Nayu Li;Chunyi Song;Qun Jane Gu;Zhiwei Xu","doi":"10.1109/LMWT.2025.3543260","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3543260","url":null,"abstract":"This letter presents a V-band high-efficiency power amplifier (PA) with 1-dB step saturated output power (<inline-formula> <tex-math>${P} _{mathbf {sat}}$ </tex-math></inline-formula>) control resolution to support different radar applications. The power control is accomplished by digitally programming the transistor width of the 6-bit power-stage <inline-formula> <tex-math>${g} _{mathbf {m}}$ </tex-math></inline-formula> arrays. The two-way current-combining technique improves the output power and efficiency with a compact area. The PA is fabricated in 65-nm CMOS and occupies a compact core area of 0.079 mm<inline-formula> <tex-math>$^{mathbf {2}}$ </tex-math></inline-formula>. It achieves a <inline-formula> <tex-math>${P} _{mathbf {sat}}$ </tex-math></inline-formula> of 13.6 dBm with a 28.5% peak power-added efficiency (PAE) at 60.5 GHz. The measured <inline-formula> <tex-math>${P} _{mathbf {sat}}$ </tex-math></inline-formula> is >11.6 dBm at 55–67 GHz and has a 7-dB tuning range with a 1-dB step. The measured <inline-formula> <tex-math>${P} _{mathbf {sat}}$ </tex-math></inline-formula> control error is <0.21 dB with calibration.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"565-568"},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Low-Loss Ultrawideband 3-dB Coupler Using Hybrid Integrated Suspended Line (HISL) With Multiple Inner Boards","authors":"Lei Chen;Yongqiang Wang;Jianquan Hu;Kaixue Ma","doi":"10.1109/LMWT.2025.3544611","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544611","url":null,"abstract":"This letter presents the hybrid integrated suspended line (HISL) platform with multiple inner boards. By employing cutting-out dielectric and multiple-inner board technology, low loss and modal phase velocity balance can be achieved simultaneously. The utilization of HISL platforms helps enhance the mechanical strength of the entire structure. The loss and the modal phase velocity of the structure and the influence of various physical dimensions on the odd- and even-mode impedance are analyzed. Based on the proposed HISL platform with multiple inner boards, a low-loss ultrawideband 2–18-GHz 3-dB coupler utilizing nonuniform technology is designed. The proposed coupler exhibits low measured insertion loss, achieving better than 0.3 dB at the center frequency. Additionally, both measured isolation and return loss are better than 15 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"541-544"},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 28-/39-GHz CMOS LO Generator With Implicit Second and Third Harmonic Extraction Techniques for Multiband 5G mm-Wave Applications","authors":"Kaitian Yang;Xiaolong Liu","doi":"10.1109/LMWT.2025.3543345","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3543345","url":null,"abstract":"This work presents a low-phase-noise millimeter-wave (mm-wave) local oscillator (LO) generator employing implicit second and third harmonic extraction techniques. The proposed harmonic extraction approach effectively improves phase noise performance in the mm-wave frequency range while maintaining the wide tuning range. Fabricated in a 65-nm CMOS process, the proposed LO generator achieves a wide frequency tuning range from 22 to 29.1 and 33 to 43.6 GHz. It consumes 7.4 and 8.8 mW for the second and third harmonic outputs, respectively. The second harmonic output achieves a phase noise of −131.1 dBc/Hz at a 10-MHz offset from a carrier frequency of 25.1 GHz, corresponding to a peak figure of merit (FoM) of 190.4 dBc/Hz. For the third harmonic output at 33.6 GHz, the phase noise is −128.4 dBc/Hz at a 10-MHz offset, resulting in a peak FoM of 189.5 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"593-596"},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Distributed Attenuator Using DTMOS-With-RB- and Diode-Connected-FET-Based Varistor Units","authors":"Jhin-Sheng Huang;Yo-Sheng Lin","doi":"10.1109/LMWT.2025.3544660","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544660","url":null,"abstract":"A passive distributed attenuator with high linearity and a wide attenuation range is presented. It consists of four parallel varistor units and three sections of series <inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>/8-transmission line (TL)-based <inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>/6 and 50-<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> synthetic TLs. Each varistor unit consists of a cascode of DTMOS-with-<inline-formula> <tex-math>${R} _{text {B}}$ </tex-math></inline-formula> FETs (DFET) M1/M2 in parallel with a cascode of DFET M3 and diode-connected FET M4 and then in series with TL2 for phase compensation of parasitic capacitance. In the low-attenuation state (<inline-formula> <tex-math>${V} _{text {ct}} =0$ </tex-math></inline-formula> V), input 1-dB compression point (IP1dB) boosting is attained due to the cascode of M1/M2 and the slowdown of M1 turn-on by the leakage suppression of <inline-formula> <tex-math>${R} _{text {B}}$ </tex-math></inline-formula>. In the high-attenuation state (<inline-formula> <tex-math>${V} _{text {ct}} =2$ </tex-math></inline-formula> V), low gain expansion (smaller than 1 dB for <inline-formula> <tex-math>${P} _{text {in}}$ </tex-math></inline-formula> up to 20 dBm) is achieved since the varistor unit is equivalent to a parallel resistance (R) of <inline-formula> <tex-math>$70~Omega $ </tex-math></inline-formula> for <inline-formula> <tex-math>${V} _{text {in}}$ </tex-math></inline-formula> of −4 to 4 V. This is attributed to the cascode of M3/M4 providing a second conduction path at <inline-formula> <tex-math>${V} _{text {in}}$ </tex-math></inline-formula> that is larger than <inline-formula> <tex-math>${V} _{text {ct}} - {V}_{text {th}}$ </tex-math></inline-formula> (1.7 V), where M2 enters the high R saturation region from the low R linear region. The attenuator achieves IP1dB,att (<inline-formula> <tex-math>${P} _{text {in}}$ </tex-math></inline-formula> at 1-dB attenuation range reduction) of 20 dBm, one of the best IP1dB,att results ever reported for (Bi)CMOS attenuators. For 4-bit attenuation control (−4 to −19 dB) with 1 dB/step, the attenuator achieves an rms gain error of 0.01–0.5 dB and an rms phase error of 4.5°–5.9° for 37–41 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"581-584"},"PeriodicalIF":0.0,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Sequential Rotation Filtering Network for High Circular Polarization Purity Antenna Array","authors":"Sifan Wu;Jianxing Li;Jiahui Yao;Yuanxi Cao;Kai-Da Xu","doi":"10.1109/LMWT.2025.3544387","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3544387","url":null,"abstract":"This letter introduces a sequential rotation filtering network (SRFN), enabling a <inline-formula> <tex-math>$16times 16$ </tex-math></inline-formula> antenna array to achieve high circular polarization (CP) purity and enhanced frequency selectivity. The proposed SRFN integrates filtering, power dividing, and phase shifting functions, providing phase states of 0°, 90°, 180°, and 270° at the four output ports with 7th-order filtering response. Moreover, four sets of <inline-formula> <tex-math>$8times 8$ </tex-math></inline-formula> subarrays are arranged orthogonally and connected to the outputs of the SRFN. Finally, a <inline-formula> <tex-math>$16times 16$ </tex-math></inline-formula> antenna array is monolithically fabricated using the 3-D printing technology. Measurement results demonstrate an operating bandwidth (return loss >10 dB) of 27.7–29.6 GHz, with the radiation gain ranging from 29.5 to 30.5 dBic. Due to the proposed SRFN, the in-band axial ratio (AR) remains lower than 0.5 dB, while the out-of-band realized gain suppression exceeds 30 dB/GHz. The proposed SRFN methodology serves as an integrated feeding network for antenna arrays requiring high CP purity and frequency selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"428-431"},"PeriodicalIF":0.0,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}