{"title":"A K-Band Quartz Glass Absorptive Bandpass Filter With On-Chip Power-Divider-Like Architecture","authors":"Mingye Fu;Qianyin Xiang;Dinghong Jia;Quanyuan Feng","doi":"10.1109/LMWT.2025.3562586","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3562586","url":null,"abstract":"In this letter, a novel integrated absorptive bandpass filter based on two-paths architecture with on chip power-divider-like three-port networks and filtering cores is presented. An imaginary impedance element is added in the middle of the absorptive resistor network for mitigating the common mode reflected waves in the stopband, and wideband reflection loss in the stopband is achieved. A quartz glass bandpass absorptive filter is designed and fabricated, with a die size of <inline-formula> <tex-math>$6.65 times 4.89$ </tex-math></inline-formula>mm. Measurement shows the filter is centered at 21.5 GHz with a 3-dB bandwidth (BW) of 3.3 GHz, an insertion loss (IL) of 1.8dB, and a wideband absorptive response from dc to 40 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"961-964"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a Flexible BPF Using Coaxial Open-Loop Dumbbell Branch Defected Conductor Structures","authors":"Yunan Han;Mengyao Cai;Jin Xu;Chunyue Cheng","doi":"10.1109/LMWT.2025.3557406","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557406","url":null,"abstract":"This letter introduces a flexible bandpass filter (BPF) that employs a coaxial structure, consisting of an inner substrate, an inner conductor featuring open-loop dumbbell-shaped defects, an outer conductor with a loop-shaped defect gap, and a transmission dielectric situated between the two conductors. For fabrication, the inner and outer defective conductor structures are manufactured using flexible printed circuit board (FPCB) technology and assembled to form the BPF with a diameter of 3.42 mm and a length of 80 mm for three cascaded resonators. Simulation and measurement results indicate that the insertion loss within the passband of 2.4–4.0 GHz is less than 1 dB, with a rejection of more than 20 dB below 1.2 GHz and above 4.6GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"965-968"},"PeriodicalIF":0.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Abdolrazzaghi;Roman Genov;George V. Eleftheriades
{"title":"Time-Multiplexed Beam-Steering Antenna Arrays for Extended-Coverage RF Powering of Multiple CMOS Brain Implants","authors":"Mohammad Abdolrazzaghi;Roman Genov;George V. Eleftheriades","doi":"10.1109/LMWT.2025.3559017","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3559017","url":null,"abstract":"This letter introduces a wireless powering system for multiple implantable devices located across a wide region of the human brain, addressing the spatial coverage challenges in traditional powering methods. We present an RF phased-array time-multiplexing technique that extends the powering coverage to as far as one hemisphere. The transmitter (TX) array is designed with optimal surface currents at 915 MHz to reach and beam-steer deep brain tissue. With transmitting 1 W, this method ensures safe and consistent power delivery over 18-cm lateral span and provides at least <inline-formula> <tex-math>$250~mu $ </tex-math></inline-formula>W to 6-cm deep receiver (RX) implants. In addition, we developed a dynamically biased 65-nm CMOS rectifier, featuring peak power conversion efficiency (PCE) of 72.6% at −2 dBm input power. The integration of phased-array multiplexing and an efficient CMOS rectifier offers a pathway toward arrays of smaller, battery-free neurostimulation implants, capable of simultaneous operation under stringent safety requirements and limited wearable power source size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"908-911"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturized IPD Filter With Multiple Flexible Transmission Zeros and High Attenuation","authors":"Lin Gu;Xinyu Zhou;Yuandan Dong","doi":"10.1109/LMWT.2025.3561157","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3561157","url":null,"abstract":"In this letter, a miniaturized integrated passive device (IPD) bandpass filter (BPF) with multiple flexibly controllable transmission zeros (TZs), high attenuation, and low loss is proposed. The proposed novel <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type filtering unit incorporates dual <italic>LC</i> series resonant circuits that allow precise placement of two TZs, enhancing the BPF’s selectivity and expanding the stopband bandwidth. Since the branches generating TZs are not the main energy paths, adding multiple TZs causes minimal loss. A three-stage BPF, based on this <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type filtering unit, demonstrates high selectivity and attenuation by introducing three TZs on each side of the passband. At the same time, it possesses the advantage of low loss. Manufactured using the GaAs-based IPD technology, the filter exhibits excellent agreement between the simulated and measured results, showcasing its potential for applications requiring ultraminiaturization and high performance in wireless communication systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"989-992"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Back-Off Range Extension of Doherty Power Amplifier Using Parasitic Capacitance Compensation","authors":"Fu Cheng Yuan;Bai Hua Zeng;Shao Yong Zheng","doi":"10.1109/LMWT.2025.3557507","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557507","url":null,"abstract":"Efficiencies of a Doherty power amplifier (DPA) at output back-off (OBO) levels are limited by the parasitic parameters of transistors. To deal with this issue, an effective approach is proposed in this letter to enhance efficiency and the OBO range of a DPA. An equivalent negative capacitance network (ENCN) is utilized to compensate for reactive impedances of the carrier amplifier, which can significantly boost efficiency at the deep back-off. For validation, an asymmetric DPA utilizing the out-phased current combining method is designed to achieve an extended OBO range. When the operating frequency is 2.55 GHz in continuous-wave measurement, the implemented DPA can obtain drain efficiencies of 54.8% at 11.6-dB OBO level and 74.4% at saturation (43.1 dBm), respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1198-1201"},"PeriodicalIF":3.4,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 5-GHz Fractional-N Reference-Sampling PLL With Voltage-Averaging Fractional Phase Detector Achieving an Integer-N-Level Phase Noise","authors":"Yanlong Zhang;Xiaoyu Yang;Hong Liao;Yan Wang;Guohe Zhang;Li Geng","doi":"10.1109/LMWT.2025.3557230","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3557230","url":null,"abstract":"A fractional phase detector (PD) architecture that can significantly reduce the quantization error of a fractional-<italic>N</i> phase-locked loop (PLL) is presented. It achieves instantaneous fractional phase detection by spatial averaging in the voltage domain through an array of reference-sampling PD (RSPD) cells. With this fractional PD, a prototype 5-GHz fractional-<italic>N</i> RSPLL is implemented in a 65-nm CMOS process. Measurement results show that the in-band and out-of-band phase noises are reduced by 21 and 33 dB, respectively, leading to a significant reduction of the integrated rms jitter from 6.35 ps to 456 fs, almost the same as that at the integer-<italic>N</i> mode (442 fs).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1069-1072"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Broadband Active Dual-Component Magnetic Probe for Near-Field Measurement","authors":"Rong Zhou;Hainan Bai;Lei Wang;Zhangming Zhu","doi":"10.1109/LMWT.2025.3556668","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3556668","url":null,"abstract":"This work first presents a broadband active dual-component magnetic probe with high sensitivity for near-field measurements. The proposed active magnetic probe is mainly composed of two orthogonal short-circuit loops as signal receiving part, a pair of strip lines as signal transmission part, two low-noise amplifiers (LNAs) as signal enhancement part, and a pair of subminiature version A (SMA) connectors as signal output part. Note that two orthogonal short-circuit loops are used to simultaneously sense two magnetic-field components in different directions and improve detection efficiency. Moreover, a pair of broadband LNAs are integrated into the probe to enhance detection sensitivity. Finally, in order to verify the effectiveness of the design, the proposed active magnetic probe is manufactured on a four-layer printed circuit board (PCB) and characterized by a near-field test system. Measurement results demonstrate that the proposed active magnetic probe can not only measure two orthogonal magnetic components simultaneously but also has high detection sensitivity and wide working bandwidth from 0.3 to 20 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1097-1100"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Compact Diplexer With Wide Stopband Based on Stacked Dual-Mode and Single-Mode SIW Cavities","authors":"Ziyu Zhou;Gang Dong;Xinqing Lei;Zhangming Zhu","doi":"10.1109/LMWT.2025.3562591","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3562591","url":null,"abstract":"This letter proposes a compact diplexer with a wide stopband based on stacked substrate-integrated waveguide (SIW) cavities. By vertically stacking the common dual-mode resonator (DMR) with multiple single-mode resonators (SMRs), the design achieves flexible bandwidth control for both channels while maintaining compactness. The proposed diplexer achieves enhanced wide-stopband performance through strategic suppression of TE<sub>102</sub>, TE<sub>103</sub>/TE<sub>301</sub>, TE<sub>302</sub>, and TE<sub>303</sub> modes in SMRs. A third-order diplexer is fabricated with a size of <inline-formula> <tex-math>$1.02lambda _{g}^{2}$ </tex-math></inline-formula>, extending the stopband up to <inline-formula> <tex-math>$3.57~f_{1}$ </tex-math></inline-formula> with a better than 20-dB rejection level.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"977-980"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Substrate Integrated Waveguide Filtering Rat-Race Coupler Using Dual-Mode Composite Cavity","authors":"Jianxing Zhuang;Jun Huang;Fang Zhu","doi":"10.1109/LMWT.2025.3561729","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3561729","url":null,"abstract":"This letter presents a compact substrate integrated waveguide (SIW) filtering rat-race coupler based on a dual-mode composite cavity (DMCC) and stacked SIW cavities (SIWCs). The dual-mode characteristics of the DMCC are systematically analyzed to guide the circuit realization. By incorporating two coupling windows between the DMCC and stacked SIWCs, the internal couplings for the TE<sub>101</sub> and folded TE<sub>101</sub> (FTE<sub>101</sub>) modes can be independently controlled, significantly reducing the design complexity of the SIW filtering rat-race coupler. To validate the design, a second-order SIW filtering rat-race coupler is designed, fabricated, and measured. The measured results agree well with the simulated ones.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 7","pages":"1001-1004"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Agile Additively Manufactured 5G/mm-Wave RF Front-End With Multilayer Conformality and Printed RF VIAs for Ultrawideband and Miniaturized Systems","authors":"Hani Al Jamal;Manos M. Tentzeris","doi":"10.1109/LMWT.2025.3558479","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3558479","url":null,"abstract":"This article presents the first fully additively manufactured (AM) multilayered RF front-end (RF-FE) for mm-wave frequencies (20–30 GHz), integrating active devices, passive printed structures, and RF signals routed on both outer layers. The system features flexible inkjet- and screen-printed RF vertical interconnects (VIAs) with insertion loss between 0.58 and 1.64 dB and minimal bending-induced degradation. Its multilayer architecture enables significant miniaturization, ideal for compact, low-cost, and sustainable mm-wave modules in wearable devices, autonomous UAVs, and smart cities. The design achieves inkjet-printed feature sizes down to <inline-formula> <tex-math>$60,mu $ </tex-math></inline-formula>m, critical for mm-wave filters, and incorporates a monopole antenna array with up to 9-dBi gain, demonstrating robust planar and conformal performance. Leveraging AM, this work establishes a pathway for miniaturized, flexible, and cost-effective RF systems, addressing key challenges in advanced communication and sensing applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"808-811"},"PeriodicalIF":0.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}