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IEEE MTT-S 75th Anniversary Special Issue - 2027 Microwaves Shape Future IEEE MTT-S 75周年特刊- 2027微波塑造未来
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-10-09 DOI: 10.1109/LMWT.2026.3737354
{"title":"IEEE MTT-S 75th Anniversary Special Issue - 2027 Microwaves Shape Future","authors":"","doi":"10.1109/LMWT.2026.3737354","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3737354","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1700-1700"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11731753","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-10-09 DOI: 10.1109/LMWT.2026.3737341
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2026.3737341","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3737341","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11731740","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149130839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
5.8-GHz Al0.6Sc0.4N Film Bulk Acoustic Resonator With High Electromechanical Coupling Coefficient of 23.9% 具有高机电耦合系数23.9%的5.8 ghz Al0.6Sc0.4N薄膜体声谐振器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-11 DOI: 10.1109/LMWT.2026.3689349
Chongyang Huo;Chen Li;Ruidong Qin;Wentong Dou;Bozuo Jing;Xuanqi Huang;Zhiqiang Mu;Wenjie Yu
{"title":"5.8-GHz Al0.6Sc0.4N Film Bulk Acoustic Resonator With High Electromechanical Coupling Coefficient of 23.9%","authors":"Chongyang Huo;Chen Li;Ruidong Qin;Wentong Dou;Bozuo Jing;Xuanqi Huang;Zhiqiang Mu;Wenjie Yu","doi":"10.1109/LMWT.2026.3689349","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3689349","url":null,"abstract":"The evolution of wireless communication technologies demands RF filters with significantly wide bandwidths. For aluminum nitride (AlN)-based bulk acoustic wave (BAW) technology, increasing the Sc doping concentration is the primary strategy to enhance the electromechanical coupling coefficient (<inline-formula> <tex-math>$k^{2}_{eff}$ </tex-math></inline-formula>), which is critical for bandwidth performance. This study presents the epitaxial growth of high-quality, single-crystalline Al<sub>0.6</sub>Sc<sub>0.4</sub>N piezoelectric thin films using a two-step method integrating metal–organic chemical vapor deposition (MOCVD) and physical vapor deposition (PVD), along with <italic>in situ</i> inductively coupled plasma (ICP) pretreatment to suppress abnormally oriented grains (AOGs) growth. Leveraging high-quality Al<sub>0.6</sub>Sc<sub>0.4</sub>N film, we successfully fabricated high-performance film bulk acoustic resonators (FBARs). The optimized resonator achieves a resonant frequency of 5.8 GHz, a maximum quality factor (<inline-formula> <tex-math>$Q_{max}$ </tex-math></inline-formula>) of 386, and a record <inline-formula> <tex-math>$k^{2}_{eff}$ </tex-math></inline-formula> of 23.9%, representing the highest reported value among AlScN resonators to date and a fourfold increase compared to pure AlN BAW resonators. In addition, the resonator also exhibits a record performance metric of <inline-formula> <tex-math>$f_{s} cdot k^{2}_{eff}$ </tex-math></inline-formula> together with a competitive <inline-formula> <tex-math>$k^{2}_{eff} cdot Q$ </tex-math></inline-formula> among the reported AlScN BAW resonators. These results validate the huge potential of high-Sc-concentration AlScN for next-generation wireless communication applications, including 6G and Wi-Fi 6E/7/8.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1599-1602"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149130920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 30 GHz Inductively Coupled VCO With a FoMT of −191.8 dBc/Hz in 40-nm CMOS 40nm CMOS中fmt为−191.8 dBc/Hz的30ghz电感耦合压控振荡器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-04-28 DOI: 10.1109/LMWT.2026.3684874
Ioannis-Dimitrios Psycharis;Vasileios Tsourtis;Grigorios Kalivas
{"title":"A 30 GHz Inductively Coupled VCO With a FoMT of −191.8 dBc/Hz in 40-nm CMOS","authors":"Ioannis-Dimitrios Psycharis;Vasileios Tsourtis;Grigorios Kalivas","doi":"10.1109/LMWT.2026.3684874","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3684874","url":null,"abstract":"This letter reports an inductively coupled voltage-controlled oscillator (VCO) operating at millimeter-wave (mm-wave) frequencies. The VCO core incorporates a dual-tapped transformer, an NMOS cross-coupled pair, a varactor, and a four-bit binary-weighted capacitor bank. Independent biasing of the drain and gate of the cross-coupled pair is achieved through the transformer center taps, preventing the core transistors from entering the deep triode region. Low phase-noise (PN) performance is obtained by maximizing the LC-tank quality factor and by incorporating a tail filter. In addition, the oscillator figure-of-merit (FoM) and FoM<sub>T</sub> are evaluated as a function of the gate bias voltage. The proposed VCO was designed and fabricated in a 40-nm CMOS process. On-die measurements indicate a tuning range of 15.9% from 25.47 to 29.88 GHz, with a PN of −107.66 dBc/Hz at 1-MHz offset from a 25.47-GHz carrier. The VCO dissipates 6.3 mW from a 1.1-V supply and achieves a FoM of −187 dBc/Hz and a FoM<sub>T</sub> of −191.8 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1671-1674"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Balanced Double-Ridge Waveguide Coupler With Inherent Wideband Common-Mode Suppression 具有固有宽带共模抑制的平衡双脊波导耦合器设计
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3692782
Ying Xue;Xin-Yue Fang;Ya-Hui Zhu;Lei Wang;Wei Qin;Jian-Xin Chen
{"title":"Design of Balanced Double-Ridge Waveguide Coupler With Inherent Wideband Common-Mode Suppression","authors":"Ying Xue;Xin-Yue Fang;Ya-Hui Zhu;Lei Wang;Wei Qin;Jian-Xin Chen","doi":"10.1109/LMWT.2026.3692782","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3692782","url":null,"abstract":"In this letter, a novel balanced double-ridge waveguide (WG) coupler based on the metallic patch ridge with a central slot is proposed. It is found that the differential-mode (DM) cutoff frequency (<inline-formula> <tex-math>$f_{c}$ </tex-math></inline-formula>) is much lower than that of the common mode (CM). By making full use of the unique characteristic, the proposed coupler is designed to be centered in the frequency range between them, achieving good DM 3-dB power allocation and wideband CM suppression simultaneously. For demonstration, a prototype of a balanced coupler is fabricated and measured, showing good agreement between the simulated and measured results. The coupler centers at 5.25 GHz and has a fractional bandwidth (FBW) of about 21.3% with measured DM return loss (RL) and isolation >15 dB. Furthermore, the CM suppression is over 45 dB from 0 to 6 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1583-1586"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Tri-Coupled Transformer-Based Ku-Band Low-Noise Amplifier With 1.9-dB NF and 30-dB Gain 基于三耦合变压器的1.9 db NF和30db增益的ku波段低噪声放大器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-12 DOI: 10.1109/LMWT.2026.3687377
Tuanjie Ding;Tao Hou;Binbin Lv;Hao Zheng;Fang Lu
{"title":"A Tri-Coupled Transformer-Based Ku-Band Low-Noise Amplifier With 1.9-dB NF and 30-dB Gain","authors":"Tuanjie Ding;Tao Hou;Binbin Lv;Hao Zheng;Fang Lu","doi":"10.1109/LMWT.2026.3687377","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3687377","url":null,"abstract":"This letter presents a tri-coupled transformer (XFMR)-based low-noise amplifier (LNA) implemented in a 55-nm CMOS process, which achieves a low noise figure (NF), high gain, and high output power for Ku-band satellite communication. The tri-coupled XFMR is implemented using the top two thick metal layers, and a strong coupling coefficient is attained through same-layer metal coupling, thereby enabling effective noise cancellation and significant Gm-boosting. Measured results show that the proposed LNA achieves a peak gain of 30 dB and an ultralow noise of 1.9–2.6 dB from 10.6 to 13.6 GHz within a 1-dB bandwidth.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1647-1650"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Reconfigurable eHISL Phase Shifter With Transmission and Dual-Reflection Modes 具有传输和双反射模式的可重构eHISL移相器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-14 DOI: 10.1109/LMWT.2026.3689602
Jin Wu;Yuefeng Hou;Tingxue Yu;Chenlin Guo;Yang Yuan;Tao Chen;Daodan Deng;Kaixue Ma
{"title":"A Reconfigurable eHISL Phase Shifter With Transmission and Dual-Reflection Modes","authors":"Jin Wu;Yuefeng Hou;Tingxue Yu;Chenlin Guo;Yang Yuan;Tao Chen;Daodan Deng;Kaixue Ma","doi":"10.1109/LMWT.2026.3689602","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3689602","url":null,"abstract":"This letter presents a novel reconfigurable phase shifter with transmission and dual-reflection modes based on enhanced hybrid integrated suspended line (eHISL) technology. The proposed phase shifter comprises a reconfigurable coupler with loads connected to its through and coupled ports. First, a novel reconfigurable phase shifter topology is proposed with detailed analysis, enabling electronic switching between transmission mode and dual-reflection mode. In dual-reflection mode, high isolation between the two ports enables independent control of their reflection phases. Second, to reduce insertion loss (IL), an air-dielectric-based eHISL structure is adopted in the design. Third, the parallel <inline-formula> <tex-math>$L$ </tex-math></inline-formula>–<inline-formula> <tex-math>$C$ </tex-math></inline-formula> dual-resonant loads are employed to achieve 7-bit 360° phase shift in both transmission and dual-reflection modes. Finally, the proposed phase shifter operating at 2.45 GHz is designed, fabricated, and measured. In transmission mode, it achieves a full phase shift range (PSR) with an IL of 1.42–2.20 dB. In dual-reflection mode, both the two ports achieve PSRs of 360° and return losses of 0.73–1.36 dB and 0.77–1.31 dB, respectively, while maintaining an isolation better than 19 dB between the two ports. The proposed reconfigurable phase shifter offers a solution for constructing full-coverage, high-gain, and high-precision reconfigurable intelligent surfaces (RISs).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1603-1606"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband and High-Purity Rectangular TE10 to Circular TM01 Mode Converter 宽带和高纯矩形TE10到圆形TM01模式转换器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-11 DOI: 10.1109/LMWT.2026.3682287
Qinghe Zhuang;Chengwei Yuan;Feng Yan;Yunfei Sun;Meng Yang;Zhaoyu Wu
{"title":"Broadband and High-Purity Rectangular TE10 to Circular TM01 Mode Converter","authors":"Qinghe Zhuang;Chengwei Yuan;Feng Yan;Yunfei Sun;Meng Yang;Zhaoyu Wu","doi":"10.1109/LMWT.2026.3682287","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3682287","url":null,"abstract":"A new topology to excite the circular TM<sub>01</sub> mode for high-power microwave (HPM) research is provided. Three important innovations enhance its transmission performance: a four-aperture sidewall coupling structure for parasitic mode suppression, an intermediate coaxial TEM mode stage for bandwidth extension, and a four-way stacked power divider for compactness. Measurement results show that within the frequency range of 7.5–11.5 GHz (relative bandwidth of about 42.1%), the converter exhibits an insertion loss less than 0.4 dB, a return loss better than 15 dB, and a mode purity higher than 96.7%. The converter features broad bandwidth, high conversion efficiency, and high mode purity, making it suitable for cold-test experiments of HPM sources and high-power transmission components.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1595-1598"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sequential Load-Modulated Balanced Amplifier With Non-Z0 Load for a Load Modulation Continuum 负载调制连续体的非z0负载顺序负载调制平衡放大器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-20 DOI: 10.1109/LMWT.2026.3683393
Pengsheng Long;Yixi Tang;Wenquan Che
{"title":"Sequential Load-Modulated Balanced Amplifier With Non-Z0 Load for a Load Modulation Continuum","authors":"Pengsheng Long;Yixi Tang;Wenquan Che","doi":"10.1109/LMWT.2026.3683393","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683393","url":null,"abstract":"One novel design of sequential load-modulated balanced power amplifier (SLMBA) is presented, which is capable of achieving a continuum of load modulation (LM) ratio. The utilization of non-Z<sub>0</sub> load impedance generates nonlinear current in the control amplifier (CA), thereby introducing an additional LM on the control branch. The optimal LM ratio can simultaneously mitigate over-driving issues and maintain high efficiency. Moreover, unlike the reported SLMBA with a continuous LM ratio, the proposed architecture eliminates the need for asymmetric auxiliary amplifiers or asymmetric couplers, enabling full utilization of auxiliary transistors and a broad bandwidth. To validate the theoretical method, an SLMBA operating at 1.7–2.6 GHz was designed, fabricated, and measured. Measurement results demonstrate a saturated output power of 42.5–43.1 dBm with power-added efficiency (PAE) of 42.4%–55.5% at saturation and 38.1%–50.7% at 10-dB output power back-off (OBO).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1651-1654"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Monolithic GaN-Based Two-Phase Buck Converter With Dead-Time Shaping Driver for Envelope Tracking Application 用于包络跟踪的带死区整形驱动器的单片氮化镓两相降压变换器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-12 DOI: 10.1109/LMWT.2026.3689881
Xiangcong Zhai;Xiangran Ni;Nuo Li;Zhiguang Hao;Ke Wei;Xinyu Liu;Weijun Luo
{"title":"A Monolithic GaN-Based Two-Phase Buck Converter With Dead-Time Shaping Driver for Envelope Tracking Application","authors":"Xiangcong Zhai;Xiangran Ni;Nuo Li;Zhiguang Hao;Ke Wei;Xinyu Liu;Weijun Luo","doi":"10.1109/LMWT.2026.3689881","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3689881","url":null,"abstract":"To prevent dead-time control pulses from collapsing at high switching frequencies and low duty cycles, this letter presents a monolithic GaN-based two-phase buck converter with an integrated dead-time shaping (DTS) driver. Acting as a pulse restoration stage, the DTS combines capacitive load decoupling with edge regeneration to suppress pulse degradation and sharpen transitions, enabling reliable transmission of nanosecond-scale dead-time control pulses and full swing switching. The converter was designed and fabricated in a 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaN-on-Si process. Measurements show a minimum full swing on time of 1.5 ns at 100 MHz and a peak power stage efficiency of 87.4%, with a maximum output power of 6.96 W at 120 MHz. The converter is also validated as an envelope tracking supply modulator (ETSM), achieving 80.8% power stage efficiency and 0.51-W average output power while tracking a 50-MHz bandwidth signal with a 12-dB peak-to-average power ratio (PAPR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1687-1690"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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