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A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3525066
Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu
{"title":"A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS","authors":"Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu","doi":"10.1109/LMWT.2024.3525066","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525066","url":null,"abstract":"This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"326-329"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521605
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3521605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521605","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835206","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Welcome to the New Editor-in-Chief 欢迎来到新主编
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522597
Roberto Gómez García;Zhizhang David Chen
{"title":"Welcome to the New Editor-in-Chief","authors":"Roberto Gómez García;Zhizhang David Chen","doi":"10.1109/LMWT.2024.3522597","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522597","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"2-3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835209","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS” “40纳米CMOS变压器嵌入式网络gmax核心的d波段高增益低噪声放大器”的勘误表
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3515712
Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng
{"title":"Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”","authors":"Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng","doi":"10.1109/LMWT.2024.3515712","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515712","url":null,"abstract":"Presents corrections to the paper, Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"139-139"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835207","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521603
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3521603","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521603","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835838","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3520965
Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue
{"title":"A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS","authors":"Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue","doi":"10.1109/LMWT.2024.3520965","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3520965","url":null,"abstract":"In this brief, a class-<inline-formula> <tex-math>$F_{23}$ </tex-math></inline-formula> voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic (<inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula>) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between <inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3f_{0}$ </tex-math></inline-formula> to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of <inline-formula> <tex-math>$0.198~text {mm}^{2}$ </tex-math></inline-formula>, the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"322-325"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522375
Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu
{"title":"Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing","authors":"Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu","doi":"10.1109/LMWT.2024.3522375","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522375","url":null,"abstract":"In this letter, a differential microwave sensor designed based on quarter-mode spoof localized surface plasmons (SLSPs) is presented. The differential sensor consists of two independent sensors each exciting a symmetrically structured resonance unit, and the size of the differential sensor is reduced by a factor of one by the composition of two independent quarter modes. A prototype of this sensor has been fabricated, and measurements have been performed on dielectric substrates with different dielectric constants and on ethanol solutions with different concentrations. The experimental results show that the sensor has an average relative sensitivity of 1.64% and 0.18% when measuring solids and liquids respectively. This work is applicable to the detection of dielectric constant of solid materials and liquid concentration in industry.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"270-273"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3523763
Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang
{"title":"High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network","authors":"Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang","doi":"10.1109/LMWT.2024.3523763","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3523763","url":null,"abstract":"A high-efficiency rectifier designed to operate across a broad range of frequencies and power levels is proposed in this letter. The rectifier features a dual-branch impedance regulation network (IRN), two subrectifiers, and a load resistor. The IRN is used to construct specific impedance relationship between the upper and lower branches at different frequencies and power levels, demonstrating good matching performance across a wide bandwidth and dynamic power range (DPR). Theoretical analysis is carried out, and a prototype is implemented, fabricated, and measured for verification. At 1.8 GHz, the optimal efficiency is found over 70% at an input power level of 8 dBm. The frequency range of the prototype is from 1.4 to 2.5 GHz (beyond 70% of the optimal efficiency), and the calculated DPR of the prototype is 18 dB (from −5 to 13 dBm). The total size is <inline-formula> <tex-math>$0.22~lambda _{text {c}} times 0.24~lambda _{text {c}}$ </tex-math></inline-formula> (at 2 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"306-309"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3519808
Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning
{"title":"Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning","authors":"Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning","doi":"10.1109/LMWT.2024.3519808","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519808","url":null,"abstract":"This article proposes a microstrip-to-microstrip (MS-to-MS) vertical transition with pixel structures and then proposes a knowledge-assisted proximal policy optimization (PPO), which is a reinforcement learning (RL) for the design of this transition. The transition requires fully connected structures and a novel mechanism to generate the pixel structures with fully connected shape is proposed and incorporated into PPO. The proposed method is compared with the particle swarm optimization (PSO) and the genetic algorithm (GA) and demonstrates benefits in improving design efficiency. The designed MS-to-MS transition is fabricated using the PCB process. Measurement results indicate that the designed MS-to-MS vertical transition operates in the band from 3.4 to 14.8 GHz with low insertion loss.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"274-277"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS
IEEE microwave and wireless technology letters Pub Date : 2025-01-07 DOI: 10.1109/LMWT.2024.3515486
Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng
{"title":"A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS","authors":"Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng","doi":"10.1109/LMWT.2024.3515486","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515486","url":null,"abstract":"In this letter, a D-band frequency octupler (<inline-formula> <tex-math>$times 8$ </tex-math></inline-formula>) with high harmonic suppression is presented in a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe BiCMOS technology. To enhance the suppression of even harmonics among high harmonics, we have implemented and refined a waveform shaping technique that effectively elevates the second harmonic while suppressing the fourth, sixth, and higher even harmonics. Additionally, the transformer-based bandpass filters (BPFs) are integrated into the design of the <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier to enhance the suppression of nontarget frequency signals without compromising power consumption. To validate our proposed concept, a D-band <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier operating at 114.5–140 GHz is manufactured in a SiGe process. The circuit achieved an output power of −2.5 dBm with an input power of −2 dBm. Within the 3-dB bandwidth, the suppression of various harmonics exceeded 28 dBc and with the maximum suppression exceeding 38 dBc. The chip consumed 125 mW of power and occupied an area of <inline-formula> <tex-math>$0.63times 1.2$ </tex-math></inline-formula> mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"314-317"},"PeriodicalIF":0.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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