IEEE microwave and wireless technology letters最新文献_第3页

Multifunction Reconfigurable Phase Shifter With Independent 360° Transmission and Reflection Phase Tuning for Multibit Reconfigurable Intelligent Surface 多功能可重构移相器，具有独立的360°传输和反射相位调谐，用于多比特可重构智能表面

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI: 10.1109/LMWT.2025.3577359

Meicheng Liu;Yuefeng Hou;Zhenshuai Fu;Shuang Zheng;Tianjie Guo;Liqi Yang;Jin Wu;Kaixue Ma

{"title":"Multifunction Reconfigurable Phase Shifter With Independent 360° Transmission and Reflection Phase Tuning for Multibit Reconfigurable Intelligent Surface","authors":"Meicheng Liu;Yuefeng Hou;Zhenshuai Fu;Shuang Zheng;Tianjie Guo;Liqi Yang;Jin Wu;Kaixue Ma","doi":"10.1109/LMWT.2025.3577359","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3577359","url":null,"abstract":"This letter reports a 7-bit 360° multifunction reconfigurable phase shifter (RPS) with independently tuned transmission and reflection modes. The proposed RPS is a promising candidate for multibit reconfigurable intelligent surfaces (RISs) with high gain and full-space coverage. First, the novel topology and design method of the multifunction RPS are proposed in this letter for the first time. The proposed RPS can provide time-division independent 360° transmission and reflection phase tuning with a single shared reflection-type phase shifter topology. Second, in the transmission mode, a two-step phase extraction method is adopted, obtaining a 360° phase shift with low phase steps and a simplified process. The traversal states are reduced by (1–<inline-formula> <tex-math>$2^{1 - n}$ </tex-math></inline-formula>) <inline-formula> <tex-math>$times 100$ </tex-math></inline-formula>% for an <italic>n-bit varactor. Third, in the reflection mode, the equivalent topology in the reflection mode is enhanced to enable a 360° phase shift with moderate phase steps as well. Finally, our proof-of-concept RPS design is implemented in PCB technology. The proposed RPS exhibits a phase range of 369° with an insertion loss of <inline-formula> <tex-math>$2.26~pm ~0.74$ </tex-math></inline-formula> dB in transmission mode, and a phase range of 365° with an insertion loss of <inline-formula> <tex-math>$3.07~pm ~1.53$ </tex-math></inline-formula> dB in reflection mode at 2.45 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1328-1331"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 2.2–82-GHz Ultrabroadband Wilkinson Power Divider Using a Multisection Folded Inductor in 130-nm SiGe BiCMOS 基于130纳米SiGe BiCMOS的2.2 - 82 ghz超宽带Wilkinson功率分压器

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI: 10.1109/LMWT.2025.3578337

Wonsub Lim;Yaw A. Mensah;Arya Moradinia;MoonKyu Cho;John D. Cressler

引用次数: 0

An X-Band Hybrid Three-Stack Power Amplifier With High Reliability in 65-nm Bulk CMOS 65纳米体CMOS高可靠性x波段混合三叠功率放大器

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI: 10.1109/LMWT.2025.3578308

Min-Gyun Kim;Tae-Hoon Kim;Mun-Kyo Lee;Jung-Dong Park

{"title":"An X-Band Hybrid Three-Stack Power Amplifier With High Reliability in 65-nm Bulk CMOS","authors":"Min-Gyun Kim;Tae-Hoon Kim;Mun-Kyo Lee;Jung-Dong Park","doi":"10.1109/LMWT.2025.3578308","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578308","url":null,"abstract":"We present a hybrid power amplifier (PA) using a three-stacked FET architecture in 65-nm bulk CMOS technology. To handle high voltage swings under a 3.3-V supply, the top stack FET uses a 2.5-V thick-oxide device, while thin-oxide devices are used in the first and second stacks. Properly sized capacitors are incorporated at each gate node to ensure impedance matching and proper voltage distribution. A current-mode combiner at both input and output forms a four-way structure for enhanced output power and efficiency. The fabricated PA achieves a power gain of 23.2 dB, a 3-dB bandwidth of 1 GHz, a peak power-added efficiency (PAE) of 24%, and a saturated output power (Psat) of 20.9 dBm. Under 256-QAM modulation, it delivers an error vector magnitude (EVM) less than −35 dB, an average output power of 12.7 dBm, an average PAE of 4.58%, and an adjacent channel power ratio (ACPR) of −33.5 dBc. Reliability tests confirm that the proposed architecture successfully meets JEDEC standards in both high-temperature operating life (HTOL) and highly accelerated stress test (HAST), thereby demonstrating stable and reliable performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1412-1415"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Nonvolatile Switches Based on 2-D Multilayered hBN Memristors for High-Frequency Applications 基于二维多层hBN忆阻器的高频非易失性开关的表征

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI: 10.1109/LMWT.2025.3576996

Jordi Verdú;Tobías Amarilla;Yaqing Shen;Sebastian Pazos;Mario Lanza;Pedro de Paco

{"title":"Characterization of Nonvolatile Switches Based on 2-D Multilayered hBN Memristors for High-Frequency Applications","authors":"Jordi Verdú;Tobías Amarilla;Yaqing Shen;Sebastian Pazos;Mario Lanza;Pedro de Paco","doi":"10.1109/LMWT.2025.3576996","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3576996","url":null,"abstract":"RF/microwave systems with large number of elements usually require switching elements with very small footprint, but providing very good electrical performance, low switching times, and good power-handling capabilities. In this sense, nonvolatile switches based on 2-D materials are emerging as a very suitable alternative to CMOS or MEMS-based technologies, mainly due to the capability of keeping a certain state with no energy consumption. In this article, different switches have been designed and fabricated using a multilayered structure based on 18 2-D hexagonal boron nitride (hBN) layers on three different substrates, high-resistivity silicon, quartz, and polycrystaline CVD diamond. The proposed device has been characterized in a frequency range up to 26.5 GHz for these three substrates. The ON-state resistance and <sc>off-state capacitance have been extracted from experimental data using an equivalent electric model being <inline-formula> <tex-math>$28~Omega $ </tex-math></inline-formula> and 22 fF, leading to insertion losses (ILs) better than 2.5 dB in case of CVD diamond, and isolation better than 10 dB in case of quartz, for the <sc>on- and <sc>off-states, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1380-1383"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11038831","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences 广角入射下的超宽带超低散射ITO吸收体

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI: 10.1109/LMWT.2025.3574000

Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin

{"title":"An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences","authors":"Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin","doi":"10.1109/LMWT.2025.3574000","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3574000","url":null,"abstract":"This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of <inline-formula> <tex-math>$300times 300$ </tex-math></inline-formula> mm2 is fabricated. The simulated and measured results are in good agreement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1324-1327"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版

IEEE microwave and wireless technology letters Pub Date : 2025-06-16 DOI: 10.1109/LMWT.2025.3576685

引用次数: 0

AlGaN/GaN HEMTs on Si by Self-Aligned TaN Contact Ledge for Low-Voltage RF Applications 基于自对准TaN接触架的硅基AlGaN/GaN HEMTs低压射频应用

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2025-06-16 DOI: 10.1109/LMWT.2025.3578128

Weiyuan Wang;Jingxiong Chen;Yuanxi Jiang;Xiao Ma;Yuanda Zheng;Hong Wang

{"title":"AlGaN/GaN HEMTs on Si by Self-Aligned TaN Contact Ledge for Low-Voltage RF Applications","authors":"Weiyuan Wang;Jingxiong Chen;Yuanxi Jiang;Xiao Ma;Yuanda Zheng;Hong Wang","doi":"10.1109/LMWT.2025.3578128","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578128","url":null,"abstract":"We propose a self-aligned contact ledge structure to achieve the small ohmic contact resistance (<inline-formula> <tex-math>$R_{text {c}}$ </tex-math></inline-formula>) of GaN-based high electron mobility transistors (HEMTs) on Si for low-voltage RF applications. Without additional photolithography processes, the ledge structure is achieved by magnetron sputtering with good particle filling on the sidewall. Due to the good coverage of sputtered Ta, the self-aligned TaN contact ledge not only has a clear boundary after high-temperature annealing but also introduces an additional current path to reduce <sc>on-resistance (<inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula>), which is important for fabricating devices for low-voltage RF applications. Benefiting from the contact ledge structure and the low sheet resistance high Al component Al0.6Ga0.4N/GaN epitaxy, a low <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$1.12~Omega cdot $ </tex-math></inline-formula>mm is obtained and the peak transconductance increased by 13%. At 3.5 GHz and operating voltage 5 V, the power-added efficiency (PAE) is 67.0% and the output power density (<inline-formula> <tex-math>${P} _{text {out}}$ </tex-math></inline-formula>) is 0.75 W/mm. The PAE is 8.5% higher than that of noncontact ledge.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1388-1391"},"PeriodicalIF":3.4,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版

IEEE microwave and wireless technology letters Pub Date : 2025-06-16 DOI: 10.1109/LMWT.2025.3576704

引用次数: 0

IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息

IEEE microwave and wireless technology letters Pub Date : 2025-06-16 DOI: 10.1109/LMWT.2025.3576687

引用次数: 0

IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息

IEEE microwave and wireless technology letters Pub Date : 2025-06-16 DOI: 10.1109/LMWT.2025.3576706

引用次数: 0