An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-06-17 DOI:10.1109/LMWT.2025.3574000

Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin

{"title":"An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences","authors":"Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin","doi":"10.1109/LMWT.2025.3574000","DOIUrl":null,"url":null,"abstract":"This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of <inline-formula> <tex-math>$300\\times 300$ </tex-math></inline-formula> mm<sup>2</sup> is fabricated. The simulated and measured results are in good agreement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1324-1327"},"PeriodicalIF":3.4000,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11038746/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of

$300\times 300$

mm² is fabricated. The simulated and measured results are in good agreement.

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广角入射下的超宽带超低散射ITO吸收体

本文介绍了一种利用多层氧化铟锡（ITO）薄膜的超宽带、超低散射、双极化和广角入射下的轻质吸收剂。基于多模共振（MR）和超宽带阻抗匹配（UWIM）吸收原理，在8层泡沫基板上配置了不同尺寸的ITO方环图案。在正入射下，ITO吸收体在1.9 ~ 40.4 GHz范围内（分数带宽为182.03%）对横向电（TE）波和横向磁（TM）波的吸收率超过99%，覆盖了S、C、X、Ku、K和Ka微波波段。在60°斜入射范围内，ITO吸收器对3.6-43.1 GHz范围内的TE波的吸收超过90%（169.2%）。同样，它对3.06-43 GHz的TM波的吸收率超过90%（173.4%）。为了研究ITO吸收体的吸收机理，对其表面电流分布和等效电路模型（ECM）进行了详细分析。最后，制作了尺寸为300 × 300 mm2的ITO吸收体原型。模拟结果与实测结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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