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A W-Band Tripler Based on Metal-Integrated Suspended Line Technology 基于金属集成悬索线技术的w波段三倍频器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-04-29 DOI: 10.1109/LMWT.2026.3682069
Peisong Zhang;Yang Yu;Yi Wu;Shixiong Liang;Sheng Li;Wenwei Wang;Meng Zhang;Kaixue Ma
{"title":"A W-Band Tripler Based on Metal-Integrated Suspended Line Technology","authors":"Peisong Zhang;Yang Yu;Yi Wu;Shixiong Liang;Sheng Li;Wenwei Wang;Meng Zhang;Kaixue Ma","doi":"10.1109/LMWT.2026.3682069","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3682069","url":null,"abstract":"This letter presents a W-band (75–110 GHz) frequency tripler using metal-integrated suspended line (MISL) technology. The entire tripler device is designed and fabricated from five layered metal sheets, with the antiparallel GaAs Schottky diode mounted by a flip chip on the central metal layer. The tripler’s matching circuit is fabricated on the same metal layer, with a small size accomplished via vertical connections of input and output. In addition, the connection holes of the UG-387 flange are positioned on each layer of the metal sheet, facilitating self-packaging. The tripler prototype has been fabricated by precise and cost-effective metal etching. The measured results indicate that the tripler’s maximum output power is 7.7 dBm, reached with 21.5 dBm of input power at 104 GHz. This approach achieves low cost, miniaturization, and high performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1631-1634"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bias- and Frequency-Dependent Optimization of Gate Length for Efficiency in GaN-on-SiC HEMTs With a Fit Predictive Model 基于拟合预测模型的GaN-on-SiC hemt栅极长度效率的偏置和频率相关优化
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-20 DOI: 10.1109/LMWT.2026.3692670
Jiongjiong Mo;Beibei Lv;Xinran Chen;Xuran Zhao
{"title":"Bias- and Frequency-Dependent Optimization of Gate Length for Efficiency in GaN-on-SiC HEMTs With a Fit Predictive Model","authors":"Jiongjiong Mo;Beibei Lv;Xinran Chen;Xuran Zhao","doi":"10.1109/LMWT.2026.3692670","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3692670","url":null,"abstract":"The efficiency of GaN-on-SiC high-electron-mobility transistors (HEMTs) is limited by the combined influence of the trap-induced current collapse, knee-voltage walkout, and parasitic capacitances. While the gate-length scaling is known to affect these mechanisms, the optimum geometry for maximum power-added efficiency (PAE) under the realistic bias and frequency conditions has remained unclear. Here, we investigate the gate length impacts on efficiency. Comprehensive DC, pulsed-IV, small-signal, and large-signal measurements reveal a nonmonotonic dependence of efficiency, from which a bias-frequency regime map for gate-length optimization has been established, and a predictive model that links PAE to small-signal f<sub>max</sub> and applied bias was introduced. The model reproduces measured data with high accuracy and offers a compact route to efficiency prediction from routine RF characterization. Together, the regime map and predictive model provide a physically grounded framework for bias- and frequency-aware design of GaN HEMTs for millimeter-wave power amplification.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1675-1678"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 24.1--31.8-GHz Ultracompact LNA With Dual-Stage Noise Cancellation by Multicoil Transformers 采用多线圈变压器双级降噪的24.1—31.8 ghz超紧凑LNA
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-11 DOI: 10.1109/LMWT.2026.3689504
Wenye Zhong;Yongchun Li;Pei Qin;Taotao Xu;Haoshen Zhu;Quan Xue
{"title":"A 24.1--31.8-GHz Ultracompact LNA With Dual-Stage Noise Cancellation by Multicoil Transformers","authors":"Wenye Zhong;Yongchun Li;Pei Qin;Taotao Xu;Haoshen Zhu;Quan Xue","doi":"10.1109/LMWT.2026.3689504","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3689504","url":null,"abstract":"This letter presents an ultracompact 24.1–31.8-GHz low-noise amplifier (LNA) with dual-stage noise cancellation (NC) by multicoil transformers. The proposed LNA features two cascaded common source (CS) stages, with a common gate (CG) stage inserted between them to help optimize the noise contribution from both the first and second stages. To achieve dual-stage NC, the NC paths at first stage and second stage are constructed based on a triple-coil transformer combined with a dual-coil transformer. These multicoil transformers enable NC and reduce chip area. Fabricated in 65-nm CMOS technology, the LNA achieves a maximum gain of 14.3 dB with a 3-dB bandwidth (BW) of 24.1–31.8 GHz and a minimum noise figure (NF) of 2.68 dB. The circuit consumes 12.4 mW under a 1-V supply, with an in-band input 1-dB compression point (IP<sub>1dB</sub>) ranging from −20 to −13.2 dBm. The entire design occupies a core area of only 0.066 mm<sup>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1639-1642"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency Broadband Rectifier With a Coupled-Feedback Network 带耦合反馈网络的高效宽带整流器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-04 DOI: 10.1109/LMWT.2026.3683700
Tianqi Wang;Wenbo Liu;Tao Wang;Jinghang Qin;Jiazhen Li
{"title":"A High-Efficiency Broadband Rectifier With a Coupled-Feedback Network","authors":"Tianqi Wang;Wenbo Liu;Tao Wang;Jinghang Qin;Jiazhen Li","doi":"10.1109/LMWT.2026.3683700","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683700","url":null,"abstract":"This letter introduces a novel broadband rectifier integrated with an initial coupled-feedback network (CFN), designed for the application in the realm of wireless power transmission. The rectifier’s architecture employs a transmission line, which has been bent into an L-shape in conjunction with the CFN to form an impedance-matching network. The CFN serves dual purposes: it not only achieves impedance matching but also recycles the rectified energy back to the source for reiterated rectification, effectively broadening the rectification bandwidth. Experimental fabrication and testing of the rectifier demonstrate that at an input power of 8 dBm and a load of 0.9 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>, the conversion efficiency exceeds 50% within the 0.7–2.8-GHz frequency range, with a peak efficiency of 70.3% and a relative bandwidth reaching 120%.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1607-1610"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Sub-6-GHz Carbon Nanotube Transistor-Based Resistive Mixer 基于sub -6 ghz碳纳米管晶体管的阻性混频器特性研究
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-20 DOI: 10.1109/LMWT.2026.3693897
Simin He;Yanwen Wu;Zhengshun Li;Defu Wang;Lian-Mao Peng
{"title":"Characterization of Sub-6-GHz Carbon Nanotube Transistor-Based Resistive Mixer","authors":"Simin He;Yanwen Wu;Zhengshun Li;Defu Wang;Lian-Mao Peng","doi":"10.1109/LMWT.2026.3693897","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3693897","url":null,"abstract":"This letter presents the fabrication and characterization of carbon nanotube (CNT) transistors and demonstrates their feasibility for high-linearity sub-6-GHz single-ended resistive mixer applications. Randomly oriented CNT FETs with a gate length of 200 nm were realized, delivering a current-gain cutoff frequency of 9.6 GHz and a maximum oscillation frequency of 21.9 GHz. To evaluate their performance in practical RF environments, the CNT FETs were integrated onto a Rogers 4003 PCB via wire bonding, enabling characterization under realistic interconnect and fixture parasitics without de-embedding. Under zero-bias operation, the proposed gate-pumped resistive mixer achieves a conversion gain (CG) of −17.8–−21 dB over the 1.4–5 GHz band. An input third-order intercept point (IIP3) of 16 dBm is obtained, indicating good linearity. These results demonstrate the feasibility of CNT FETs for passive mixer applications in sub-6-GHz RF front ends.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1623-1626"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power Wide-Dynamic-Range GaN Rectifier Using Diode-Topology Impedance Compression 采用二极管拓扑阻抗压缩的大功率宽动态范围GaN整流器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3692979
Xianghao Min;Ming Xiao;Xiufeng Song;Zhengxing Zhang;Menghan Zheng;Mengjiao Xiang;Hong Zhou;Kui Dang;Jincheng Zhang;Yue Hao
{"title":"High-Power Wide-Dynamic-Range GaN Rectifier Using Diode-Topology Impedance Compression","authors":"Xianghao Min;Ming Xiao;Xiufeng Song;Zhengxing Zhang;Menghan Zheng;Mengjiao Xiang;Hong Zhou;Kui Dang;Jincheng Zhang;Yue Hao","doi":"10.1109/LMWT.2026.3692979","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3692979","url":null,"abstract":"This letter presents a systematic analysis of the input impedance characteristics of GaN Schottky barrier diodes (SBDs) under different topologies, and proposes a streamlined design methodology for wide-dynamic-range rectifiers targeting high-power applications. The rectifier adopts a parallel configuration of two subrectifiers, each providing a fundamental input impedance through deliberate diode topology selection. Wide-range impedance matching is then realized using only a single series microstrip line, thereby minimizing circuit complexity and parasitic loss. Two rectifier prototypes, operating at 2.45 and 5.8 GHz, are implemented and measured to validate the concept. At 2.45 GHz, the rectifier maintains a power conversion efficiency (PCE) above 50% over a 27-dB input power dynamic range (18–45 dBm), with a peak PCE of 81.7% at 37 dBm. At 5.8 GHz, over 50% PCE is sustained across a 24.2-dB range (20.7–44.9 dBm), with a peak efficiency of 85.1% at 34 dBm. To the best of the authors’ knowledge, this work achieves the highest peak efficiency and the highest power handling capability among all reported wide-dynamic-range rectifiers.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1611-1614"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-10-09 DOI: 10.1109/LMWT.2026.3737343
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2026.3737343","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3737343","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"C2-C2"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11731745","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-Band Noise-Canceling LNA With Geometry-Synthesized Asymmetric Transformer and Stage-Dependent Neutralization 几何合成非对称变压器和级相关中和的w波段降噪LNA
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3692691
Wentao Zhu;Dawei Tang;Bojun Liu;Qianqi Meng;Zheng Yan;Si-Yuan Tang;Peigen Zhou;Zhe Chen;Jixin Chen;Wei Hong
{"title":"A W-Band Noise-Canceling LNA With Geometry-Synthesized Asymmetric Transformer and Stage-Dependent Neutralization","authors":"Wentao Zhu;Dawei Tang;Bojun Liu;Qianqi Meng;Zheng Yan;Si-Yuan Tang;Peigen Zhou;Zhe Chen;Jixin Chen;Wei Hong","doi":"10.1109/LMWT.2026.3692691","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3692691","url":null,"abstract":"Conventional optimization for millimeter-wave noise-canceling (NC) LNAs faces schematic-to-layout EM discrepancies and tradeoffs between cancellation depth and noise matching. This letter presents a W-band LNA featuring a geometry-synthesized asymmetric transformer (GS-AT). By directly mapping physical dimensions to amplitude and phase compensation conditions, the GS-AT ensures deep noise cancellation without iterative tuning. Additionally, a stage-dependent strategy exploits the second-stage intrinsic Miller effect to achieve passive noise matching with the GS-AT. Fabricated in 28-nm bulk CMOS, the LNA achieves a measured peak gain of 27.5 dB, a 3-dB bandwidth of 79–98 GHz, and a minimum noise figure (NF) of 5.67 dB, verifying the efficacy of the geometry-based synthesis.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1643-1646"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mitigation of Corona Discharge Breakdown in ESIW Bandpass Filters ESIW带通滤波器中电晕放电击穿的缓解
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-04 DOI: 10.1109/LMWT.2026.3687240
Antonio Seller Rueda;Stephan Marini;Darío Herraiz;Ángel Belenguer;Héctor Esteban;Vicente E. Boria
{"title":"Mitigation of Corona Discharge Breakdown in ESIW Bandpass Filters","authors":"Antonio Seller Rueda;Stephan Marini;Darío Herraiz;Ángel Belenguer;Héctor Esteban;Vicente E. Boria","doi":"10.1109/LMWT.2026.3687240","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3687240","url":null,"abstract":"In this work, corona discharge breakdown thresholds in empty substrate integrated waveguide (ESIW) bandpass filters are investigated and experimentally validated for the first time. The objectives are the analysis and subsequent enhancement of the peak power handling capability (PPHC) of inductive ESIW filters operating in low-pressure environments, where gas breakdown may limit the maximum admissible RF power level. First, the critical regions where the electric field (EF) reaches its maximum amplitude are identified by full-wave electromagnetic (EM) simulations. Then, an enhancement strategy based on the introduction of drilled apertures in the ESIW covers is applied, in order to reshape the field distribution in the most critical zones without compromising the in-band response. The results show a consistent increase in the corona discharge threshold at low pressure, between 2 and 3.1 dB, with respect to a reference ESIW bandpass filter of the same electrical specifications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1555-1558"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11505999","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Adaptive Time-Stepping Scheme for Nonlinear Field-Circuit Co-Simulation Based on the MFETD and LIM Methods 基于MFETD和LIM方法的非线性场路联合仿真自适应时步方案
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-12 DOI: 10.1109/LMWT.2026.3688505
Ke Chen;Chengfeng Zhou;Lili Zhu;Mingwei Zhuang;Qing Huo Liu
{"title":"An Adaptive Time-Stepping Scheme for Nonlinear Field-Circuit Co-Simulation Based on the MFETD and LIM Methods","authors":"Ke Chen;Chengfeng Zhou;Lili Zhu;Mingwei Zhuang;Qing Huo Liu","doi":"10.1109/LMWT.2026.3688505","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3688505","url":null,"abstract":"This letter presents an adaptive time-stepping scheme for efficient field-circuit co-simulation of nonlinear systems involving electromagnetic structures coupled with input/output buffer information specification (IBIS) models. The electromagnetic and circuit subsystems are solved using the mixed finite-element time-domain (MFETD) method and the latency insertion method (LIM), respectively. To address the time-step mismatch between the two subsystems, a global coarse time step is employed for the MFETD solver, while the circuit solver adaptively refines its local time step within each electromagnetic interval. In addition, the model order reduction (MOR) technique is integrated to accelerate the time-stepping process. The proposed algorithm achieves an excellent balance between accuracy and efficiency, and enables the field-circuit co-simulation of complex multiport coupled systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1547-1550"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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