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High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT
IEEE microwave and wireless technology letters Pub Date : 2025-01-06 DOI: 10.1109/LMWT.2024.3522057
Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima
{"title":"High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT","authors":"Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima","doi":"10.1109/LMWT.2024.3522057","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522057","url":null,"abstract":"We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"310-313"},"PeriodicalIF":0.0,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies
IEEE microwave and wireless technology letters Pub Date : 2025-01-03 DOI: 10.1109/LMWT.2024.3522810
Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni
{"title":"A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies","authors":"Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni","doi":"10.1109/LMWT.2024.3522810","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522810","url":null,"abstract":"In this letter, we present a technique to determine efficient placement of nearby structures to the device-under-test (DUT) based on the DUT’s impedance, which is overlooked in the current layout guidelines. This technique involves sweeping both the impedance of the DUT and the spatial location of the nearby structure to create a map where the structure can be placed that would simultaneously minimize coupling to the DUT as well as the space between devices. The simulations were validated up to 110 GHz using gallium nitride (GaN) high-electron-mobility transistor (HEMT) measurements with and without a nearby line.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"370-373"},"PeriodicalIF":0.0,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method
IEEE microwave and wireless technology letters Pub Date : 2025-01-01 DOI: 10.1109/LMWT.2024.3521962
Xing Li;Li Xu;Li Liao;Bin Li
{"title":"Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method","authors":"Xing Li;Li Xu;Li Liao;Bin Li","doi":"10.1109/LMWT.2024.3521962","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521962","url":null,"abstract":"Based on our previous research on the explicit-implicit hybridizable discontinuous Galerkin time-domain (ex-imHDGTD) method, this letter gives two important applications in time-domain multiscale electromagnetics. The first is that the different ratios of both coarse and refined meshes are discussed, which shows that grid division strategy has a significant effect on the performance of ex-imHDGTD. The second is that a total-field/scattered-field (TF/SF) method is derived to impose the excitation on interfaces instead of boundary faces. Compared with the traditional hybridizable discontinuous Galerkin (HDG) method, the introduction of TF/SF changes the formulations of both local and global linear systems. Once applying this TF/SF in ex-imHDGTD, it is very easy for 3-D waveguide problems to obtain the transmitted and reflected waves. Note that this is the first time the TF/SF is used in the ex-imHDGTD method. Numerical results show that the proposed applications are feasible due to higher computational performances.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"262-265"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reflectionless Substrate Loaded Waveguide Bandstop Filter
IEEE microwave and wireless technology letters Pub Date : 2024-12-31 DOI: 10.1109/LMWT.2024.3517617
Boyoung Lee;Jongheun Lee;Juseop Lee
{"title":"Reflectionless Substrate Loaded Waveguide Bandstop Filter","authors":"Boyoung Lee;Jongheun Lee;Juseop Lee","doi":"10.1109/LMWT.2024.3517617","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517617","url":null,"abstract":"We present a new waveguide structure featuring reflectionless bandstop filtering and its design method. The reflectionless bandstop filtering is achieved simply by putting a substrate containing microstrip resonators on the bottom surface of a standard rectangular waveguide structure. Hence, whenever needed, a bandstop filtering functionality can be readily added without any structural change in an existing waveguide-based low-power wireless communications system. To verify the proposed structure and design method, reflectionless bandstop filters with one and three attenuation poles were designed, assembled, and evaluated through measurements.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"278-281"},"PeriodicalIF":0.0,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetrically Split-Cylinder Resonator With Air Gap for Measuring the Complex Permittivity of Film on a Substrate
IEEE microwave and wireless technology letters Pub Date : 2024-12-31 DOI: 10.1109/LMWT.2024.3522129
Chengyong Yu;Xuan Ran;Yunpeng Zhang;Zhuoyue Zhang;Chong Gao;Jiawei Long;Xue Niu;Hu Zheng;En Li
{"title":"Asymmetrically Split-Cylinder Resonator With Air Gap for Measuring the Complex Permittivity of Film on a Substrate","authors":"Chengyong Yu;Xuan Ran;Yunpeng Zhang;Zhuoyue Zhang;Chong Gao;Jiawei Long;Xue Niu;Hu Zheng;En Li","doi":"10.1109/LMWT.2024.3522129","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522129","url":null,"abstract":"In this letter, a simple but very effective theoretical analysis is presented for the first time to model an asymmetric split-cylinder resonator (SCR) formed by the loading of multilayer samples. The fringing field effects at the flange can be effectively corrected by equating the multilayer structure to a single one, thus allowing the permittivity of the thin film on a substrate in the asymmetric SCR to be accurately extracted using a simple model of a multilayer dielectric-filled closed cavity. The validity of the proposed method has been investigated both numerically and experimentally at 10–20 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"290-293"},"PeriodicalIF":0.0,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 6.5-GHz Power-Efficient Two-Stage Feedforward Self-Interference Cancellation Receiver
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3519758
Teng-Shen Yang;Yi-Chieh Chang;Liang-Hung Lu
{"title":"A 6.5-GHz Power-Efficient Two-Stage Feedforward Self-Interference Cancellation Receiver","authors":"Teng-Shen Yang;Yi-Chieh Chang;Liang-Hung Lu","doi":"10.1109/LMWT.2024.3519758","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519758","url":null,"abstract":"This letter presents a two-stage feedforward (FF) power-efficient self-interference cancellation (SIC) frequency-division duplex (FDD) receiver at the 6.5-GHz band for 5G deployment. The first stage employs a transformer-feedback low-noise amplifier (LNA) that effectively reduces additional noise sources from the subsequent SIC stage, resulting in a low noise figure (NF) and low power consumption. In the second stage, the SIC path includes two passive mixers and a baseband variable gain amplifier (VGA) to attenuate the strong interfering signal from the transmitter. In addition, a passive-mixer-like transmission gate (PML-TG) is incorporated to ensure the synchronization of timing alignment between the main receiver path and the SIC path. Fabricated in a 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m technology, this work demonstrates 25 dB of SIC at 200-MHz offset with a signal bandwidth of 160 MHz. The proposed circuit can operate at a transmitter interference level of up to 20 dBm while consuming only 23.8 mW of dc power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"249-252"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Wideband Right-Angle CPWG-to-Waveguide Transition for Ku-Band Applications
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3518843
Hoyong Kim;Gyoungdeuk Kim;Jihaeng Cho;Kyoungyoul Park;Sangkil Kim
{"title":"Design of a Wideband Right-Angle CPWG-to-Waveguide Transition for Ku-Band Applications","authors":"Hoyong Kim;Gyoungdeuk Kim;Jihaeng Cho;Kyoungyoul Park;Sangkil Kim","doi":"10.1109/LMWT.2024.3518843","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3518843","url":null,"abstract":"This letter presents a novel wideband planar coplanar waveguide with ground (CPWG)-to-rectangular waveguide (RWG) transition designed for Ku-band applications. The architecture employs a stacked patch structure integrated with shorting via walls, which are pivotal for mode conversion. The design incorporates dual matching techniques—mode and impedance matching—to extend the bandwidth. Specifically, the cross-slot magnetic currents induce an E-field that aligns with the TE10 mode of the waveguide, while the matching elements effectively suppress the undesirable higher order TM11 mode resonance. The transition operates over a bandwidth of 10.5–15.8 GHz (<inline-formula> <tex-math>$Delta f =39.7$ </tex-math></inline-formula>%) with corresponding total insertion losses (ILs) maintained below 1.33 dB. The transition demonstrates an IL of up to 0.7 dB within its operational bandwidth.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
360° Balanced Tunable Reflection-Type Phase Shifter With High Common-Mode Suppression
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3519309
Lei-Lei Qiu;Yiming Guo;Zhi-Chong Zhang;Lianwen Deng;Lei Zhu
{"title":"360° Balanced Tunable Reflection-Type Phase Shifter With High Common-Mode Suppression","authors":"Lei-Lei Qiu;Yiming Guo;Zhi-Chong Zhang;Lianwen Deng;Lei Zhu","doi":"10.1109/LMWT.2024.3519309","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519309","url":null,"abstract":"A balanced tunable reflection-type phase shifter (RTPS) with a broad phase shift range (PSR) and high common-mode (CM) suppression is proposed. The configuration includes two identical reflection loads, comprising two varactor diodes connected in parallel at the output ports of a coupled line and a six-port balanced-to-unbalanced quadrature coupler. The coupler rejects CM signals and supplies quadrature phase to the reflection loads, whereas the electronic-controlled diodes in the reflection loads enable tunable phase shift. The RTPS is capable of precisely attaining 365° PSR and 25 dB CM rejection, and can therefore be implemented in balanced antenna systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"298-301"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3520229
Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti
{"title":"4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections","authors":"Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti","doi":"10.1109/LMWT.2024.3520229","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3520229","url":null,"abstract":"Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"334-337"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10817650","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency Symmetrical Doherty Power Amplifier With Back-Off Reconfigurability
IEEE microwave and wireless technology letters Pub Date : 2024-12-26 DOI: 10.1109/LMWT.2024.3517706
Leyan Wan;Songbai He;Cheng Zhong;Tianyang Zhong;Mingyu Liu;Yuchen Bian;Haiqian Tang;Chuan Li;Fei You
{"title":"A High-Efficiency Symmetrical Doherty Power Amplifier With Back-Off Reconfigurability","authors":"Leyan Wan;Songbai He;Cheng Zhong;Tianyang Zhong;Mingyu Liu;Yuchen Bian;Haiqian Tang;Chuan Li;Fei You","doi":"10.1109/LMWT.2024.3517706","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517706","url":null,"abstract":"This letter presents the design of a symmetrical Doherty power amplifier (DPA) with output power back-off (OBO) range reconfigurability by using a new and explicit circuit model. The theoretical analysis reveals that OBO range (>9 dB) can be extended and controlled without changing the circuit structure, taking advantage of the phase shift of DPA matching subnetworks and adjusting the drain bias. To verify the proposed theory, a DPA is designed across 2–2.4 GHz with a 9-dB OBO range. Also, 11 dB can be further implemented by drain bias adjusting. The experimental results show drain efficiencies of 47%–52% at 9-dB OBO levels and 45%–49% at 11-dB OBO levels across 2–2.4 GHz, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"209-212"},"PeriodicalIF":0.0,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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