A Dual-Band Injection-Locked Frequency Quadrupler for 5G Multiband Applications

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Kai Li;Zhipeng Wang;Fanyi Meng;Kaixue Ma;Keping Wang
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引用次数: 0

Abstract

This article proposes a 24.2–29-/36.8–44-GHz dual-band injection-locked frequency quadrupler (ILFQ) with high harmonic rejection for 5G multiband applications. By introducing two parallel reconfigurable amplifiers that switch between low-band mode and high-band mode, the proposed ILFQ supports dual-band operation with only one harmonic generator. These reconfigurable amplifiers can also purify and enhance the 4th harmonic of the injection current, thereby widening the locking range and improving the harmonic rejection ration. In addition, an embedded notch filter is designed to further improve harmonic rejection ratio (HRR). Fabricated in a 65-nm CMOS, the proposed ILFQ achieves more than 44.9-/36.3-dBc 1st HRR and more than 35.5-/27.2-dBc 2nd HRR within the locking range of 24.2–29/36.8–44 GHz. The measured maximum dc power consumption is 15.4/16.3 mW in two modes, with a chip area of 0.49 mm2.
用于5G多频段应用的双频注入锁频四倍器
本文提出了一种适用于5G多频段应用的高谐波抑制的24.2-29 /36.8 - 44 ghz双频注入锁频四倍器(ILFQ)。通过引入两个可在低频带模式和高频带模式之间切换的并联可重构放大器,该ILFQ仅使用一个谐波发生器即可实现双频工作。这些可重构放大器还可以净化和增强注入电流的四次谐波,从而扩大锁定范围,提高谐波抑制比。此外,还设计了嵌入式陷波滤波器,进一步提高了谐波抑制比。该ILFQ在65纳米CMOS上制造,在24.2-29/36.8-44 GHz的锁定范围内实现了44.9-/36.3 dbc的第一HRR和35.5-/27.2 dbc的第二HRR。两种模式下测量的最大直流功耗为15.4/16.3 mW,芯片面积为0.49 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.00
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