{"title":"广角入射下的超宽带超低散射ITO吸收体","authors":"Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin","doi":"10.1109/LMWT.2025.3574000","DOIUrl":null,"url":null,"abstract":"This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of <inline-formula> <tex-math>$300\\times 300$ </tex-math></inline-formula> mm<sup>2</sup> is fabricated. The simulated and measured results are in good agreement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1324-1327"},"PeriodicalIF":3.4000,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences\",\"authors\":\"Qingqi He;Jianxun Su;Meijun Qu;Lan Lu;Hongcheng Yin\",\"doi\":\"10.1109/LMWT.2025.3574000\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of <inline-formula> <tex-math>$300\\\\times 300$ </tex-math></inline-formula> mm<sup>2</sup> is fabricated. The simulated and measured results are in good agreement.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 9\",\"pages\":\"1324-1327\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11038746/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11038746/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
An Ultrawideband and Ultralow Scattering ITO Absorber Under Wide-Angle Incidences
This letter presents an ultrawideband, ultralow scattering, dual-polarized, and lightweight absorber under wide-angle incidences, which utilizes multilayer indium tin oxide (ITO) films. Based on the multimode resonance (MR) and ultra-wideband impedance matching (UWIM) absorption principles, ITO square ring patterns with different sizes are configured in a pyramid shape on eight layers of foam substrate. Under normal incidence, the absorption rates of transverse electric (TE) waves and transverse magnetic (TM) waves for the ITO absorber exceed 99% from 1.9 to 40.4 GHz [the fractional bandwidth (FBW) is 182.03%], covering the S, C, X, Ku, K and Ka microwave bands. Under oblique incidence covering a 60° range, the ITO absorber exhibits over 90% absorption for TE waves within 3.6–43.1 GHz (169.2%). Similarly, it demonstrates over 90% absorption for TM waves in 3.06–43 GHz (173.4%). To investigate the absorption mechanism of the ITO absorber, a detailed analysis of its surface current distribution and equivalent circuit model (ECM) is conducted. Finally, an ITO absorber prototype with dimensions of $300\times 300$ mm2 is fabricated. The simulated and measured results are in good agreement.
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