Fully Integrated GaAs MMIC Bandpass Filtering Power Amplifier Chip With Compact Couple-Line-Based Matching Network

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-06-20 DOI:10.1109/LMWT.2025.3578722

Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang

引用次数: 0

Abstract

This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-

$\mu $

m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.

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具有紧凑型双线匹配网络的全集成GaAs MMIC带通滤波功率放大器芯片

本文介绍了一种新型带通滤波功率放大器（FPA）结构，该结构具有直流块输入匹配网络（IMN），该结构利用由两条级联耦合线、一条短路耦合线（SCCL）和一个并联谐振器（PR）组成的滤波阻抗变压器。SCCL在通带附近产生传输零点（TZs），实现急剧滚降特性。PR在占用最小电路面积的同时增强了滤波响应。为了验证，设计并制造了一个采用0.25- $\mu $ m GaAs工艺的单片微波集成电路（MMIC） FPA，实现了蛇形布线，具有高度紧凑的布局。测量结果表明，在9-11 GHz频段内，带外抑制为30 db，输出功率为27 dbm，漏极效率（DE）为46%-55%。使用60 mhz 64-QAM 5G-NR信号，具有数字预失真（DPD）的相邻通道功率比（ACPR）低于- 48.4 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量