RF Integrated Passive Devices Trimming Using Phase Change Material Switches

This letter presents a phase-change material (PCM) switch-based trimming technique for an radio frequency (RF) L–C output matching circuit fabricated on high-resistivity silicon. By leveraging the memory properties of PCM switches, the proposed circuit enables precise postfabrication adjustments to compensating for active device variations. The measured L–C circuit inductor is tuned from 1.3 to 1.6 nH by switching its parallel capacitance, while the capacitor is adjusted from 0.7 to 1.2 pF, resulting in four distinct impedance states. The measured total insertion loss ranges from −1.62 to −2.95 dB, showing good agreement with simulations. The complete circuit occupies an area of $332\times 363~\mu $ m², which is nearly identical to its fixed version.