A 10–60-GHz LNA With 3.2–4.4-dB NF for Wideband Applications in 16-nm FinFET Process

Abstract

This letter presents a 10–60-GHz low-noise amplifier (LNA) implemented in CMOS FinFET technology. The LNA consists of four gain-staggered cascode stages to cover the wide bandwidth. Resistive feedback and multipole loads are used to achieve wideband operation. A high coupling coefficient balun is used to generate a differential output signal. The LNA has a measured small-signal peak gain of 23 dB with a noise figure (NF) of 3.2–4.4 dB. The LNA also achieves an output-referred 1-dB compression point of 0 dBm at the center frequency of the band and consumes a total power of 32 mW occupying an active area of $0.8\times 0.29~\text {mm}^{2}$ . Application areas are phased arrays covering multiple 5G bands and multistandard receivers.