Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang
{"title":"具有紧凑型双线匹配网络的全集成GaAs MMIC带通滤波功率放大器芯片","authors":"Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang","doi":"10.1109/LMWT.2025.3578722","DOIUrl":null,"url":null,"abstract":"This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1416-1419"},"PeriodicalIF":3.4000,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fully Integrated GaAs MMIC Bandpass Filtering Power Amplifier Chip With Compact Couple-Line-Based Matching Network\",\"authors\":\"Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang\",\"doi\":\"10.1109/LMWT.2025.3578722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 9\",\"pages\":\"1416-1419\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11045339/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11045339/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fully Integrated GaAs MMIC Bandpass Filtering Power Amplifier Chip With Compact Couple-Line-Based Matching Network
This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-$\mu $ m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.
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