A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-03-31 DOI:10.1109/LMWT.2025.3547900

Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang

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Abstract

In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.

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GaAs技术与陶瓷工艺异质集成中的紧凑型ku波段极低相位噪声窄带压控振荡器

本文介绍了GaAs技术与陶瓷工艺异质集成的ku波段低相位噪声（PN）压控振荡器（VCO）。该VCO利用了低噪声GaAs HBT技术和低损耗陶瓷工艺的优势，主要由高质量因数(Q)谐振器、GaAs MMIC芯片、变容二极管芯片和GaAs MOS电容四部分组成。利用砷化镓工艺，研究了采用MMIC芯片并加载变容二极管的新型基极调谐电路，最终实现了ku波段振荡。此外，采用陶瓷工艺实现了高质量因数(Q)的介电谐振腔，保证了良好的PN性能。高Q谐振器基于顶部蚀刻圆形槽的陶瓷谐振器，工作频率为16.1 GHz， Q值为1093。最后，对压控振荡器进行制造、异质集成和测量。VCO的工作频率范围为15.87至15.92 GHz，在100 khz偏置时pn为- 114 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

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0.00%

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