{"title":"基于相变材料的直流至200 GHz宽带高性能SPDT开关","authors":"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai","doi":"10.1109/LMWT.2025.3552771","DOIUrl":null,"url":null,"abstract":"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"730-733"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173","citationCount":"0","resultStr":"{\"title\":\"Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz\",\"authors\":\"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai\",\"doi\":\"10.1109/LMWT.2025.3552771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"730-733\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10947173/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10947173/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz
This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.