基于相变材料的直流至200 GHz宽带高性能SPDT开关

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai
{"title":"基于相变材料的直流至200 GHz宽带高性能SPDT开关","authors":"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai","doi":"10.1109/LMWT.2025.3552771","DOIUrl":null,"url":null,"abstract":"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"730-733"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173","citationCount":"0","resultStr":"{\"title\":\"Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz\",\"authors\":\"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai\",\"doi\":\"10.1109/LMWT.2025.3552771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"730-733\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10947173/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10947173/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

这封信介绍了两个单极双掷(SPDT)开关(SPDT-1和SPDT-2),它们使用基于相变材料(PCM)的开关器件和匹配网络来补偿高频寄生效应,并使用低阻抗传输线作为新型偏置电路,工作范围从0 (dc)到200 GHz。SPDT-1采用纯串行架构实现极低损耗,在60 GHz和200 GHz下的测量插入损耗分别低于0.6 dB和2.2 dB,在60 GHz和200 GHz下的测量隔离度分别高于35.5 dB和14.2 dB。SPDT-2有一个额外的分流开关装置,以实现高隔离性能,在60 GHz和200 GHz下的测量插入损耗分别低于0.6 dB和2.9 dB,在60 GHz和200 GHz下的测量隔离度分别高于37.6 dB和25.6 dB。测量结果表明,所提出的开关在太赫兹(THz)频段优于现有的射频(RF)开关。据作者所知,这项研究是第一个开发基于pcm的SPDT开关,该开关可以在高达200 GHz的频率下工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz
This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.
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