GaAs技术与陶瓷工艺异质集成中的紧凑型ku波段极低相位噪声窄带压控振荡器

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang
{"title":"GaAs技术与陶瓷工艺异质集成中的紧凑型ku波段极低相位噪声窄带压控振荡器","authors":"Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang","doi":"10.1109/LMWT.2025.3547900","DOIUrl":null,"url":null,"abstract":"In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"710-713"},"PeriodicalIF":3.4000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process\",\"authors\":\"Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang\",\"doi\":\"10.1109/LMWT.2025.3547900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"710-713\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10945381/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10945381/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了GaAs技术与陶瓷工艺异质集成的ku波段低相位噪声(PN)压控振荡器(VCO)。该VCO利用了低噪声GaAs HBT技术和低损耗陶瓷工艺的优势,主要由高质量因数(Q)谐振器、GaAs MMIC芯片、变容二极管芯片和GaAs MOS电容四部分组成。利用砷化镓工艺,研究了采用MMIC芯片并加载变容二极管的新型基极调谐电路,最终实现了ku波段振荡。此外,采用陶瓷工艺实现了高质量因数(Q)的介电谐振腔,保证了良好的PN性能。高Q谐振器基于顶部蚀刻圆形槽的陶瓷谐振器,工作频率为16.1 GHz, Q值为1093。最后,对压控振荡器进行制造、异质集成和测量。VCO的工作频率范围为15.87至15.92 GHz,在100 khz偏置时pn为- 114 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process
In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信