Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang
{"title":"GaAs技术与陶瓷工艺异质集成中的紧凑型ku波段极低相位噪声窄带压控振荡器","authors":"Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang","doi":"10.1109/LMWT.2025.3547900","DOIUrl":null,"url":null,"abstract":"In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"710-713"},"PeriodicalIF":3.4000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process\",\"authors\":\"Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang\",\"doi\":\"10.1109/LMWT.2025.3547900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"710-713\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10945381/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10945381/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process
In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.