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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献

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Synchronization of R-Mode Base Stations r型基站的同步
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234840
C. Rieck, S. Gewies, Lars Grundhöfer, M. Hoppe
{"title":"Synchronization of R-Mode Base Stations","authors":"C. Rieck, S. Gewies, Lars Grundhöfer, M. Hoppe","doi":"10.1109/IFCS-ISAF41089.2020.9234840","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234840","url":null,"abstract":"R-Mode is an alternative maritime PNT technology currently under development. It is based on synchronous transmissions and multilateration. Base station synchronization errors are recognized as the major error source. Introduction to R-Mode using maritime radio beacons, timing requirements, and the concept of R-Mode in-band synchronization are briefly presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"35 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83510304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Measuring Residual Magnetic Field in the Magnetic Shield with Magnetic Resonance Signal Width 用磁共振信号宽度测量磁屏蔽内残余磁场
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234902
Yucheng Yang, Jingbiao Chen, Xiang Peng, Teng Wu, Hong Guo
{"title":"Measuring Residual Magnetic Field in the Magnetic Shield with Magnetic Resonance Signal Width","authors":"Yucheng Yang, Jingbiao Chen, Xiang Peng, Teng Wu, Hong Guo","doi":"10.1109/IFCS-ISAF41089.2020.9234902","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234902","url":null,"abstract":"In this article, we present a novel method to measure the residual magnetic field in the magnetic shield. Because of the nonlinear Zeeman effect, the magnetic resonance width will grow with the increasing magnetic field. By detecting the dependence of the magnetic resonance signal width on the applied magnetic field, the residual magnetic field in the magnetic shield can be deduced. The error of the deduced value and the true value can be less than 1.5 nT. Higher sampling rate can result in less error.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"30 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77334078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films AlScN中的铁电性:开关、压印和150nm以下薄膜
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234883
S. Fichtner, F. Lofink, B. Wagner, Georg Schönweger, Tom-Niklas Kreutzer, A. Petraru, H. Kohlstedt
{"title":"Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films","authors":"S. Fichtner, F. Lofink, B. Wagner, Georg Schönweger, Tom-Niklas Kreutzer, A. Petraru, H. Kohlstedt","doi":"10.1109/IFCS-ISAF41089.2020.9234883","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234883","url":null,"abstract":"The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations $(70-110 mu mathrm{C}/text{cm}^{2})$. We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm – as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75014039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Effects of Resonator Volume on The Oscillator Near-Carrier Phase Noise 谐振腔体积对振荡器近载波相位噪声的影响
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234928
Parvin Akhkandi, Sina Moradian, Hakhamanesh Mansoorzare, R. Abdolvand
{"title":"Effects of Resonator Volume on The Oscillator Near-Carrier Phase Noise","authors":"Parvin Akhkandi, Sina Moradian, Hakhamanesh Mansoorzare, R. Abdolvand","doi":"10.1109/IFCS-ISAF41089.2020.9234928","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234928","url":null,"abstract":"This paper reports the first study of near-carrier phase noise (PN) dependency on the resonator volume/harmonic-number in thin-film piezoelectric-on-substrate (TPoS) MEMS oscillators. Two lateral bulk-acoustic TPoS resonators with different volumes (3rd and 5th harmonic orders) were designed to operate at the same ∼25.6 MHz and fabricated on a $25mumathrm{m}$ silicon on insulator (SOI) substrate. The devices chosen for this study have different volumes but exhibit identical Quality factor ($Q$) and insertion loss (IL). The measured PN of the oscillators built based on these two resonators are measured and it is observed that the one based on the 5th order resonator exhibits ∼6dB lower PN @1KHz frequency offset compared to the 3rd order device. Although our preliminary results are not conclusive enough, it is hypothesized that an inverse proportionality to the resonator volume/mass predicted by earlier models could also describe this observation.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"29 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75164057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films 重离子辐照对HfO2薄膜结构和铁电性能的影响
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234942
T. Kämpfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel
{"title":"Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films","authors":"T. Kämpfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel","doi":"10.1109/IFCS-ISAF41089.2020.9234942","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234942","url":null,"abstract":"The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 1010 ions/cm2 of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO2 (HSO) and Hf0.5Zr0.5O2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"302 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76251985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films 基于氧化铪薄膜的热释电CMOS兼容传感器元件
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234892
C. Mart, A. Viegas, S. Eßlinger, M. Czernohorsky, W. Weinreich, D. Mutschall, A. Kaiser, N. Neumann, T. Großmann, K. Hiller, L. Eng
{"title":"Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films","authors":"C. Mart, A. Viegas, S. Eßlinger, M. Czernohorsky, W. Weinreich, D. Mutschall, A. Kaiser, N. Neumann, T. Großmann, K. Hiller, L. Eng","doi":"10.1109/IFCS-ISAF41089.2020.9234892","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234892","url":null,"abstract":"Nanometer-thin ferroelectric hafnium oxide (HfO<inf>2</inf>) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO<inf>2</inf> in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> mixed oxide.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"27 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85228395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Localized Modes in Asymmetric Phononic Crystals 非对称声子晶体中的局域模式
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234866
Yanbo He, D. Weinstein
{"title":"Localized Modes in Asymmetric Phononic Crystals","authors":"Yanbo He, D. Weinstein","doi":"10.1109/IFCS-ISAF41089.2020.9234866","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234866","url":null,"abstract":"This paper reports on a localized mechanical resonance induced by a novel phononic crystal (PnC) design demonstrated in a $1 mu mathrm{m}$ aluminum nitride (AlN) thin film. An asymmetric PnC with diagonal beam bridging discs in a square lattice generates an isolated mode inside the PnC bandgap defined by the flexural mode of the connecting beam. Here we investigate the properties of the PnC dispersion relations as a function of key design parameters, defining resonance cavities to excite the localized mode. PnC resonators with localized mode at 156 MHz are characterized as a function of central bar rotation angle ($theta$), number of actuation layers ($mathrm{N}_{act}$) and lateral periods (P). This analysis of electromechanical modes with designed flat dispersion relation is an important first step toward Density-Near-Zero (DNZ) metamaterials and resilient elastic wave manipulation on chip.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82096027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Dual-Ring Breath-Mode MEMS-Based 10.00 MHz GPS-Disciplined Reference Oscillator 基于mems的双环呼吸模式10.00 MHz gps自律参考振荡器
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234944
M. S. Islam, S. Mandal, G. Xereas, V. Chodavarapu
{"title":"A Dual-Ring Breath-Mode MEMS-Based 10.00 MHz GPS-Disciplined Reference Oscillator","authors":"M. S. Islam, S. Mandal, G. Xereas, V. Chodavarapu","doi":"10.1109/IFCS-ISAF41089.2020.9234944","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234944","url":null,"abstract":"The frequency stability of reference oscillators (ROs) is a key performance limiter for all applications that require a timing or frequency reference, including precision sensors, inertial navigation systems, and radio frequency (RF) transceivers. This work demonstrates a GPS-disciplined MEMS RO based on injection locking of a ∼10.00 MHz MEMS-referenced oscillator (breath-mode dual ring resonator and custom single-chip CMOS feedback amplifier) to a GPS-disciplined crystal oscillator. The RO has excellent intrinsic short-term stability due to the high quality factor of the resonator ($Qapprox 85,000$ at a polarization voltage of 19 V). Stability was further optimized by using the programmable phase shift provided by the amplifier, which revealed the existence of a well-defined maximum stability point (MSP). In addition, long-term frequency fluctuations of the unlocked RO were significantly reduced by using an oven and active temperature compensation loop.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"41 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80688507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Ferroelectric Energy Landscapes: Insights into the Origin of Negative Capacitance 实验铁电能量景观:对负电容起源的洞察
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234897
M. Hoffmann, Mengcheng Gui, S. Slesazeck, T. Mikolajick
{"title":"Experimental Ferroelectric Energy Landscapes: Insights into the Origin of Negative Capacitance","authors":"M. Hoffmann, Mengcheng Gui, S. Slesazeck, T. Mikolajick","doi":"10.1109/IFCS-ISAF41089.2020.9234897","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234897","url":null,"abstract":"The concept of a free energy landscape is vital in describing the physics of ferroelectrics. New experimental methods allow the extraction of such energy landscapes directly from pulsed electrical measurements. This enables the identification of regions of negative energy curvature as a negative capacitance state in the ferroelectric. Here we show, that ferroelectric Hf0.5Zr0.5O2films with thin dielectric interface layers exhibit two separate regions of negative capacitance in accordance with Landau theory, which provides new insights into the physics of ferroelectrics.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"85 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78726059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sputtered AlN Lateral Bimorph: Process Integration Challenges and Opportunities 溅射AlN横向双晶圆:工艺集成的挑战与机遇
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234864
B. Davaji, Mamdouh Abdelmajeed, A. Lal, T. Pennell, Vincent J Genova
{"title":"Sputtered AlN Lateral Bimorph: Process Integration Challenges and Opportunities","authors":"B. Davaji, Mamdouh Abdelmajeed, A. Lal, T. Pennell, Vincent J Genova","doi":"10.1109/IFCS-ISAF41089.2020.9234864","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234864","url":null,"abstract":"A fabrication process for sputtered piezoelectric AlN lateral bimorph transducers is presented. This work focuses on challenges with the interdependencies of the sputtered AlN film texture and the process development, especially plasma etching. The AlN films with better rocking curve FWHM have higher etch rates, smoother surface, and higher etch selectivity to oxide. By controlling the surface roughness of the underlying oxide layer, between 6 to 1.7 nm, we reduced the FWHM of sputtered AlN from 3 to 1.2 degrees. We verified an independent control parameter on the AlN crystal quality without changing the sputtering parameters, and this is a potential pathway to control the AlN plasma etching process by regional adjusting the substrate surface.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78747684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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