Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI:10.1109/IFCS-ISAF41089.2020.9234942

T. Kämpfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel

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引用次数: 2

Abstract

The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 1010 ions/cm2 of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO2 (HSO) and Hf0.5Zr0.5O2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.

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重离子辐照对HfO2薄膜结构和铁电性能的影响

新型薄膜铁电材料氧化铪重新引起了人们对铁电存储器概念的兴趣，这是因为它促进了CMOS和BEoL兼容的集成。因此，一个主要的要求是铁电层对电离辐射的稳定性，例如伽马和重离子暴露。在这项研究中，我们首次研究了重离子辐照对氧化铪基薄膜晶体学和铁电性能的影响。结果表明，在能量为1.635 GeV的1010个Au26+离子/cm2的影响下，Si:HfO2 (HSO)和Hf0.5Zr0.5O2 (HZO)的晶体学和铁电性能保持不变。对于较高的剂量，可以观察到软影响，这是辐射支持相变的结果。本研究结果将有助于铁电存储器在航空航天领域的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

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