Sputtered AlN Lateral Bimorph: Process Integration Challenges and Opportunities

B. Davaji, Mamdouh Abdelmajeed, A. Lal, T. Pennell, Vincent J Genova
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引用次数: 1

Abstract

A fabrication process for sputtered piezoelectric AlN lateral bimorph transducers is presented. This work focuses on challenges with the interdependencies of the sputtered AlN film texture and the process development, especially plasma etching. The AlN films with better rocking curve FWHM have higher etch rates, smoother surface, and higher etch selectivity to oxide. By controlling the surface roughness of the underlying oxide layer, between 6 to 1.7 nm, we reduced the FWHM of sputtered AlN from 3 to 1.2 degrees. We verified an independent control parameter on the AlN crystal quality without changing the sputtering parameters, and this is a potential pathway to control the AlN plasma etching process by regional adjusting the substrate surface.
溅射AlN横向双晶圆:工艺集成的挑战与机遇
介绍了一种溅射压电AlN横向双晶片换能器的制作工艺。这项工作的重点是与溅射AlN薄膜纹理和工艺发展的相互依赖性的挑战,特别是等离子蚀刻。具有较好摆动曲线FWHM的AlN薄膜具有较高的蚀刻速率、较光滑的表面和较高的氧化物蚀刻选择性。通过控制底层氧化层的表面粗糙度在6 ~ 1.7 nm之间,我们将溅射AlN的FWHM从3度降低到1.2度。我们验证了在不改变溅射参数的情况下对AlN晶体质量的独立控制参数,这是通过区域调节衬底表面来控制AlN等离子体刻蚀过程的潜在途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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