Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films

Abstract

Nanometer-thin ferroelectric hafnium oxide (HfO2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf0.5Zr0.5O2 mixed oxide.