2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献_第10页

White Rabbit Single Fibre Bidirectional Transmission of Precise Time Using Unconventional Wavelengths 利用非常规波长的白兔单纤维双向精确时间传输

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234815

J. Vojtěch, O. Havlis, Sarbojeet Bhowmick, Martin Šlapák, P. Munster, T. Horváth, R. Velc, J. Kundrát, L. Altmannova, Rudolf Vohnout, P. Škoda, V. Smotlacha

引用次数: 4

Precision Resonant Beam Strain Sensor Employing Gap-Dependent Frequency Shift 采用间隙相关频移的精密谐振梁应变传感器

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234911

A. Ozgurluk, C. Nguyen

{"title":"Precision Resonant Beam Strain Sensor Employing Gap-Dependent Frequency Shift","authors":"A. Ozgurluk, C. Nguyen","doi":"10.1109/IFCS-ISAF41089.2020.9234911","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234911","url":null,"abstract":"A micromechanical structure for on-chip strain sensing maps strain-induced gap changes to resonance frequency shifts while employing differential strategies to null out bias uncertainty, all towards repeatable measurement of sub-nm displacement changes that equate to sub-$-muvarepsilon$ strain increments. The key enabler here is the use of gap-dependent electrical stiffness to shift resonance frequencies as structural elements stretch or shrink to relieve stress. An output based on the difference frequency between two close proximity structures with unequal stress arm lengths (cf. Fig. 1) removes uncertainty on the initial gap spacing and permits a $206 text{Hz}/muvarepsilon$ scale factor. The ability to precisely measure the frequency of the high-$Q$ (∼4000) structures, down to at least 1 Hz, puts the resolution of this sensor at least $5mathrm{n}varepsilon$ (or 790 Pa for polysilicon). An on-chip highly sensitive strain sensing device like this will likely be instrumental to managing stress changes over the lifetime of micromechanical circuits, such as oscillators and filters.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"195 2 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85602791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Secondary Frequency Versus Temperature Compensation of an OCXO Using a Segmented Polynomial Array 基于分段多项式阵列的OCXO二次频率温度补偿

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234937

J. Esterline, Dewain Stange

{"title":"Secondary Frequency Versus Temperature Compensation of an OCXO Using a Segmented Polynomial Array","authors":"J. Esterline, Dewain Stange","doi":"10.1109/IFCS-ISAF41089.2020.9234937","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234937","url":null,"abstract":"The temperature performance of Oven Controlled Crystal Oscillators (OCXOs) and Double Oven Controlled Crystal Oscillators (DOCXOs) have been the pinnacle of quartz crystal frequency versus temperature performance for decades. DOCXOs can provide frequency versus temperature stabilities under +/− 1ppb. This superior performance comes at the cost of the power consumption of running two ovens, as well as footprint impact from the extra circuitry. Wide temperature ranges are also a challenge for DOCXOs due to the need to run the ovens at very high temperatures. This paper focuses on a secondary method of compensating OCXOs for frequency versus temperature performance using a segmented polynomial array compensation. This method of compensation can achieve results unobtainable through conventional compensation methods. A group of eight OCXOs in a $20 text{mm} times 20 text{mm}$ package with SC cut crystals were studied for this paper. The inherent mean frequency versus temperature performance of the most improved unit was ±4.29 ppb over the industrial range of −40 to 85 °C. Using 4 segments to compensate the unit the frequency versus temperature performance was reduced to mean performance of ±0.153 ppb over the industrial range. This is a 28 to 1 improvement over the OCXOs inherent performance. This compensated single oven technology provides superior temperature performance over a wider temperature range with lower power consumption than can be achieved with traditional methods. The theory of this compensation method will be discussed, and data showing the results of frequency versus temperature compensation on the qualification group will be presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"55 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85640139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading 机电载荷作用下锆钛酸铅薄膜的失效机理

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234833

K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry

{"title":"Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading","authors":"K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry","doi":"10.1109/IFCS-ISAF41089.2020.9234833","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234833","url":null,"abstract":"Understanding the failure mechanisms of piezoelectric thin films is critical for the commercialization of piezoelectric microelectromechanical systems. This paper describes the failure of $0.6 mu mathrm{m}$ lead zirconate titanate (PZT) thin films on Si wafers with different in-plane stresses under large electric fields. The films failed by a combination of cracking and thermal breakdown events. It was found that the crack initiation and propagation behavior varied with the stress state of the films. The total stress required for crack initiation was estimated to be near 500 MPa. As expected, cracks propagated perpendicular to the maximum tensile stress direction. Thermal breakdown events and cracks were correlated, suggesting coupling between electrical and mechanical failure. It was also found that films that were released from the underlying substrates were less susceptible to failure by cracking. It was proposed that during electric field loading the released film stacks were able to bow and alleviate some of the stress. Released films may also experience enhanced domain wall motion that increases their fracture toughness. The results indicate that both applied stress and clamping conditions play important roles in the electromechancial failure of piezoelectric thin films.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"90 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Trapped Charge Effect on Composite Lithium Niobate-Silicon Acoustoelectric Delay Lines 铌酸锂-硅复合声电延迟线的俘获电荷效应

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234933

Hakhamanesh Mansoorzare, R. Abdolvand

{"title":"Trapped Charge Effect on Composite Lithium Niobate-Silicon Acoustoelectric Delay Lines","authors":"Hakhamanesh Mansoorzare, R. Abdolvand","doi":"10.1109/IFCS-ISAF41089.2020.9234933","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234933","url":null,"abstract":"Acoustoelectric delay lines (AEDL) fabricated on a composite lithium niobate-silicon (LN-Si) platform could enable acoustoelectric (AE) nonreciprocity and gain provided that the material properties of the LN-Si heterostructure are properly selected. Among such properties are the carrier density and mobility in the Si substrate. However, the bulk Si properties are subject to substantial perturbation at the LN-Si interface as a result of interfacial trapped charges at dislocations and dangling bond sites. The metal-insulator-semiconductor (MIS) capacitor inherently formed in such heterostructures, however, could allow for some level of control over the Si carrier distribution at the LN film interface. In this work, we demonstrate that the AE gain achieved by the momentum transfer from the carriers drifting in Si and the subsequent nonreciprocity could be fine-tuned and the efficiency of the device could be improved by utilizing the MIS capacitor. The device efficiency is found to be enhanced once the majority electron carriers in n-type Si are slightly depleted at the LN-Si interface resulting in ∼1.5 times improvement in the AE gain at a lower bias current, increasing the efficiency by ∼60%.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"12 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88117581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IDT-based Acoustic Wave Devices Using Ultrathin Lithium Niobate and Lithium Tantalate 利用超薄铌酸锂和钽酸锂的idp声波器件

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234811

Shuji Tanaka, M. Kadota

引用次数: 4

Improved Electromechanical Transduction for PiezoMUMPS HBAR Impedance Sensors 压电umps HBAR阻抗传感器的改进机电转导

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234913

Jesus Yanez, E. Ledesma, A. Uranga, N. Barniol

引用次数: 2

An Analytical Model to Predict Extrinsic Aging in BAW Resonators BAW谐振器外源老化的分析模型

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234907

J. Segovia-Fernandez, Ernest Ting-Ta Yen, Javier Rojas, T. Tran, M. Chowdhury, P. Smeys

引用次数: 0

A Zero Standby Power MEMS Switch-based Infrared Sensor with Frequency Output 基于零待机功率MEMS开关的频率输出红外传感器

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234827

Vageeswar Rajaram, Sungho Kang, S. Calisgan, Antea Risso, Z. Qian, M. Rinaldi

引用次数: 0

A Review of the Approaches to Improve The Effective Coupling Coefficient of AlN based RF MEMS Resonators 提高AlN基RF MEMS谐振器有效耦合系数的方法综述

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234821

Yao Zhu, Nan Wang, Chen Liu, Ying Zhang

{"title":"A Review of the Approaches to Improve The Effective Coupling Coefficient of AlN based RF MEMS Resonators","authors":"Yao Zhu, Nan Wang, Chen Liu, Ying Zhang","doi":"10.1109/IFCS-ISAF41089.2020.9234821","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234821","url":null,"abstract":"This work reviews various methods which improve the effective coupling coefficient (${k^{2}}_{eff}$) of non-bulk acoustic wave (BAW) aluminum nitride (AlN) based RF MEMS resonators, mainly focusing on the innovative structural design of the resonators. ${k^{2}}_{eff}$ is the key parameter for a resonator in communication applications because it measures the achievable fractional bandwidth of the filter constructed. The resonator's configuration, dimension, material stack and the fabrication process will all have impact on its ${k^{2}}_{eff}$. In this paper, the authors will review the efforts in improving the ${k^{2}}_{eff}$ of piezoelectric MEMS resonators from research community in the past 15 years, mainly from the following three approaches: coupling lateral wave with vertical wave, exciting two-dimensional (2-D) lateral wave, as well as coupling 2-D lateral wave with vertical wave. The material will be limited to AlN family, which is proven to be manageable for manufacturing. The authors will also try to make recommendations to the effectiveness of various approaches and the path forward.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"122 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80982255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3