压电umps HBAR阻抗传感器的改进机电转导

Jesus Yanez, E. Ledesma, A. Uranga, N. Barniol
{"title":"压电umps HBAR阻抗传感器的改进机电转导","authors":"Jesus Yanez, E. Ledesma, A. Uranga, N. Barniol","doi":"10.1109/IFCS-ISAF41089.2020.9234913","DOIUrl":null,"url":null,"abstract":"This study discloses how the distribution of the effective electromechanical coupling in the modes of our HBAR ultrasonic sensors at GHz range is significantly affected by the configuration of layers and materials used for its manufacture. Using analytical models from the literature supported by FEM simulations, frequency bands with greater coupling were found due to the effect of extra materials on the stack. S11 measurement of the devices proved this effect. The foregoing is a glance of how to increase the effective coupling in HBAR modes far distant from the resonance frequency of the piezoelectric element while preserving the high bandwidth and low input impedance inherent to the thin piezoelectric layer, in contrast to the relatively low coupling that can be expected with a similar HBAR of negligible electrodes at such frequencies.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"26 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improved Electromechanical Transduction for PiezoMUMPS HBAR Impedance Sensors\",\"authors\":\"Jesus Yanez, E. Ledesma, A. Uranga, N. Barniol\",\"doi\":\"10.1109/IFCS-ISAF41089.2020.9234913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study discloses how the distribution of the effective electromechanical coupling in the modes of our HBAR ultrasonic sensors at GHz range is significantly affected by the configuration of layers and materials used for its manufacture. Using analytical models from the literature supported by FEM simulations, frequency bands with greater coupling were found due to the effect of extra materials on the stack. S11 measurement of the devices proved this effect. The foregoing is a glance of how to increase the effective coupling in HBAR modes far distant from the resonance frequency of the piezoelectric element while preserving the high bandwidth and low input impedance inherent to the thin piezoelectric layer, in contrast to the relatively low coupling that can be expected with a similar HBAR of negligible electrodes at such frequencies.\",\"PeriodicalId\":6872,\"journal\":{\"name\":\"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)\",\"volume\":\"26 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本研究揭示了我们的HBAR超声传感器在GHz范围内的有效机电耦合分布如何受到其制造层和材料配置的显着影响。利用有限元模拟支持的文献分析模型,发现了由于额外材料对堆栈的影响而具有较大耦合的频带。S11对该装置的测量证明了这一效果。上述内容概述了如何在远离压电元件谐振频率的HBAR模式中增加有效耦合,同时保持薄压电层固有的高带宽和低输入阻抗,而与此相反,在该频率下,类似的可忽略电极的HBAR可以预期相对较低的耦合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved Electromechanical Transduction for PiezoMUMPS HBAR Impedance Sensors
This study discloses how the distribution of the effective electromechanical coupling in the modes of our HBAR ultrasonic sensors at GHz range is significantly affected by the configuration of layers and materials used for its manufacture. Using analytical models from the literature supported by FEM simulations, frequency bands with greater coupling were found due to the effect of extra materials on the stack. S11 measurement of the devices proved this effect. The foregoing is a glance of how to increase the effective coupling in HBAR modes far distant from the resonance frequency of the piezoelectric element while preserving the high bandwidth and low input impedance inherent to the thin piezoelectric layer, in contrast to the relatively low coupling that can be expected with a similar HBAR of negligible electrodes at such frequencies.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信