2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献_第9页

Fully Digital QCM using Twin Quartz Sensor 全数字QCM使用双石英传感器

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234876

T. Imaike, Akito Shirai

引用次数: 1

Multipath Parameter Extraction and Correction from Frequency Dependent Amplitude Fading 频率相关幅度衰落的多径参数提取与校正

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234888

A. Hati, C. Nelson

引用次数: 0

A TWSTFT Transmitter Prototype Compatible with SDR Receivers and SATRE Modems 与SDR接收器和SATRE调制解调器兼容的TWSTFT发射机原型

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234873

M. Siccardi, T. T. Thai, D. Rovera, I. Sesia

引用次数: 1

Copyright 版权

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/ifcs-isaf41089.2020.9234921

引用次数: 1

High Stability Ultra-Miniature Size OCXO Operating within Wide Temperature Range: Using ASIC with Built-in Oven for OCXO 高稳定性超小型OCXO在宽温度范围内工作:使用内置烤箱的ASIC用于OCXO

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234922

K. Irie, Jun-ichi Arai, Manabu Ito, Toshiyuki Shinotsuka, Manabu Ishikawa, S. Wakamatsu

引用次数: 0

Characterization of a Static Magnetic Field with Two-Photon Rotational Spectroscopy of Cold Trapped HD+ 冷阱HD+的双光子旋转光谱表征静态磁场

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234880

F. Constantin

引用次数: 0

Nonlinearity Driven Higher Order Harmonics in CMOS-MEMS Resonators CMOS-MEMS谐振器中非线性驱动的高次谐波

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234852

K. Bhosale, Gayathri Pillai, Sheng-Shian Li

引用次数: 1

Precision Resonant Beam Strain Sensor Employing Gap-Dependent Frequency Shift 采用间隙相关频移的精密谐振梁应变传感器

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234911

A. Ozgurluk, C. Nguyen

{"title":"Precision Resonant Beam Strain Sensor Employing Gap-Dependent Frequency Shift","authors":"A. Ozgurluk, C. Nguyen","doi":"10.1109/IFCS-ISAF41089.2020.9234911","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234911","url":null,"abstract":"A micromechanical structure for on-chip strain sensing maps strain-induced gap changes to resonance frequency shifts while employing differential strategies to null out bias uncertainty, all towards repeatable measurement of sub-nm displacement changes that equate to sub-$-muvarepsilon$ strain increments. The key enabler here is the use of gap-dependent electrical stiffness to shift resonance frequencies as structural elements stretch or shrink to relieve stress. An output based on the difference frequency between two close proximity structures with unequal stress arm lengths (cf. Fig. 1) removes uncertainty on the initial gap spacing and permits a $206 text{Hz}/muvarepsilon$ scale factor. The ability to precisely measure the frequency of the high-$Q$ (∼4000) structures, down to at least 1 Hz, puts the resolution of this sensor at least $5mathrm{n}varepsilon$ (or 790 Pa for polysilicon). An on-chip highly sensitive strain sensing device like this will likely be instrumental to managing stress changes over the lifetime of micromechanical circuits, such as oscillators and filters.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"195 2 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85602791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Secondary Frequency Versus Temperature Compensation of an OCXO Using a Segmented Polynomial Array 基于分段多项式阵列的OCXO二次频率温度补偿

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234937

J. Esterline, Dewain Stange

{"title":"Secondary Frequency Versus Temperature Compensation of an OCXO Using a Segmented Polynomial Array","authors":"J. Esterline, Dewain Stange","doi":"10.1109/IFCS-ISAF41089.2020.9234937","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234937","url":null,"abstract":"The temperature performance of Oven Controlled Crystal Oscillators (OCXOs) and Double Oven Controlled Crystal Oscillators (DOCXOs) have been the pinnacle of quartz crystal frequency versus temperature performance for decades. DOCXOs can provide frequency versus temperature stabilities under +/− 1ppb. This superior performance comes at the cost of the power consumption of running two ovens, as well as footprint impact from the extra circuitry. Wide temperature ranges are also a challenge for DOCXOs due to the need to run the ovens at very high temperatures. This paper focuses on a secondary method of compensating OCXOs for frequency versus temperature performance using a segmented polynomial array compensation. This method of compensation can achieve results unobtainable through conventional compensation methods. A group of eight OCXOs in a $20 text{mm} times 20 text{mm}$ package with SC cut crystals were studied for this paper. The inherent mean frequency versus temperature performance of the most improved unit was ±4.29 ppb over the industrial range of −40 to 85 °C. Using 4 segments to compensate the unit the frequency versus temperature performance was reduced to mean performance of ±0.153 ppb over the industrial range. This is a 28 to 1 improvement over the OCXOs inherent performance. This compensated single oven technology provides superior temperature performance over a wider temperature range with lower power consumption than can be achieved with traditional methods. The theory of this compensation method will be discussed, and data showing the results of frequency versus temperature compensation on the qualification group will be presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"55 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85640139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading 机电载荷作用下锆钛酸铅薄膜的失效机理

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI: 10.1109/IFCS-ISAF41089.2020.9234833

K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry

{"title":"Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading","authors":"K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry","doi":"10.1109/IFCS-ISAF41089.2020.9234833","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234833","url":null,"abstract":"Understanding the failure mechanisms of piezoelectric thin films is critical for the commercialization of piezoelectric microelectromechanical systems. This paper describes the failure of $0.6 mu mathrm{m}$ lead zirconate titanate (PZT) thin films on Si wafers with different in-plane stresses under large electric fields. The films failed by a combination of cracking and thermal breakdown events. It was found that the crack initiation and propagation behavior varied with the stress state of the films. The total stress required for crack initiation was estimated to be near 500 MPa. As expected, cracks propagated perpendicular to the maximum tensile stress direction. Thermal breakdown events and cracks were correlated, suggesting coupling between electrical and mechanical failure. It was also found that films that were released from the underlying substrates were less susceptible to failure by cracking. It was proposed that during electric field loading the released film stacks were able to bow and alleviate some of the stress. Released films may also experience enhanced domain wall motion that increases their fracture toughness. The results indicate that both applied stress and clamping conditions play important roles in the electromechancial failure of piezoelectric thin films.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"90 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1