Nonlinearity Driven Higher Order Harmonics in CMOS-MEMS Resonators

K. Bhosale, Gayathri Pillai, Sheng-Shian Li
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引用次数: 1

Abstract

In this work, we explore the generation of higher order harmonics in an electrostatically actuated wide-width beam resonator fabricated by a CMOS-MEMS Titanium Nitride Composite (TiN-C) platform. The explored TiN-C platform can achieve a gap of 400 nm with high transduction efficiency, low motional resistance ($R_{m}$) and enhanced frequency stability. A record-high Radius of Curvature (R.O.C of 11.9 cm) of the fabricated wide-width pseudo free-free beam is achieved among CMOS-MEMS counterparts. The fundamental mode is measured at a resonance frequency of 9.8 MHz. The second and the third higher order harmonics are observed when the resonator is excited at its fundamental flexural mode in the non-linear region. A varying AC voltage drives the resonator from the linear regime into non-linear regime for an applied DC bias of 80 V. The presence of harmonics is confirmed electrically and optically through measurement using the Spectrum Analyzer and the Laser Doppler Vibrometer (LDV) respectively.
CMOS-MEMS谐振器中非线性驱动的高次谐波
在这项工作中,我们探索了由CMOS-MEMS氮化钛复合材料(TiN-C)平台制造的静电驱动宽光束谐振器中高次谐波的产生。所探索的TiN-C平台可以实现400 nm的间隙,具有高转导效率,低运动阻力($R_{m}$)和增强的频率稳定性。制作的宽宽度伪自由-自由光束的曲率半径(R.O.C)在CMOS-MEMS同类产品中达到了创纪录的11.9 cm。基模在9.8 MHz的共振频率下测量。当谐振器在非线性区域的基本弯曲模式下被激发时,观察到第二次和第三次高次谐波。在施加80 V直流偏置的情况下,一个变化的交流电压驱动谐振器从线性状态进入非线性状态。通过光谱分析仪和激光多普勒测振仪(LDV)的测量,分别确定了谐波的存在。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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