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2012 International Electron Devices Meeting最新文献

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Impact of stray field on the switching properties of perpendicular MTJ for scaled MRAM 杂散场对尺度MRAM垂直MTJ开关特性的影响
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479127
Yung-Hung Wang, Sheng-Huang Huang, Ding-Yeong Wang, K. Shen, C. Chien, Keng-Ming Kuo, Shan-Yi Yang, D. Deng
{"title":"Impact of stray field on the switching properties of perpendicular MTJ for scaled MRAM","authors":"Yung-Hung Wang, Sheng-Huang Huang, Ding-Yeong Wang, K. Shen, C. Chien, Keng-Ming Kuo, Shan-Yi Yang, D. Deng","doi":"10.1109/IEDM.2012.6479127","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479127","url":null,"abstract":"For the first time, we show the stray field (Hs) from the pinned layer of perpendicular magnetic tunnel junctions (pMTJs) plays multiple important roles: its out-of-plane component degrades pinned layer stability of scaled MTJ, while its in-plane component assists spin-transfer torque switching. Through stray field engineering, one can retain its advantage, and minimized its detrimental effect. We also show that etching process plays a vital role in the stray-field engineering. Our pMTJ exhibits robust pinned layer performance, symmetrical R-H loop and balanced spin-torque switching current. The switching current of our pMTJ is ~60uA@20us for a 80nm diameter pMTJ.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"18 1","pages":"29.2.1-29.2.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75715446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations 擦除后瞬态v移的起源及其对二维/三维结构电荷阱闪存单元操作的影响
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478964
Jong Kyung Park, Dong-il Moon, Yang‐Kyu Choi, Seok-Hee Lee, Ki-hong Lee, S. Pyi, B. Cho
{"title":"Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations","authors":"Jong Kyung Park, Dong-il Moon, Yang‐Kyu Choi, Seok-Hee Lee, Ki-hong Lee, S. Pyi, B. Cho","doi":"10.1109/IEDM.2012.6478964","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478964","url":null,"abstract":"The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"54 1","pages":"2.4.1-2.4.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75809666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
InGaAs/InP SPAD with improved structure for sharp timing response 具有改进结构的InGaAs/InP SPAD，具有锐利的时序响应
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479095
A. Tosi, F. Acerbi, M. Anti, F. Zappa
{"title":"InGaAs/InP SPAD with improved structure for sharp timing response","authors":"A. Tosi, F. Acerbi, M. Anti, F. Zappa","doi":"10.1109/IEDM.2012.6479095","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479095","url":null,"abstract":"We designed and fabricated a 25 μm active area diameter In0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (~30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"42 1","pages":"24.4.1-24.4.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80887115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency silicon and Germanium stack junction solar cells 高效硅锗堆叠结太阳能电池
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479032
Dongkyun Kim, Youngmoon Choi, E. Do, Yeonil Lee, Yun-Gi Kim
{"title":"High efficiency silicon and Germanium stack junction solar cells","authors":"Dongkyun Kim, Youngmoon Choi, E. Do, Yeonil Lee, Yun-Gi Kim","doi":"10.1109/IEDM.2012.6479032","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479032","url":null,"abstract":"We have fabricated Si/Ge stack junction solar cells in order to overcome silicon single junction limit efficiency. Ge cell can absorb long wavelength photons that cannot be absorbed in Si. Bottom Ge solar cell can theoretically yield additional 5% efficiency to Si top cell. We have fabricated 21.3% top Si / 1.6% bottom Ge stack junction with 22.9% module efficiency. SiO2 and SiNx double insulating interlayers were optimized in order to transmit long wavelength photon to the Ge cell and achieve good passivation at the interlayer. The stack junction will be able to overcome the Si practical efficiency limit of 26% in the near future, and be the candidate for the next generation crystalline Si solar cell.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"51 1","pages":"12.6.1-12.6.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75014973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bio-integrated electronics Bio-integrated电子
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478958
J. Rogers
{"title":"Bio-integrated electronics","authors":"J. Rogers","doi":"10.1109/IEDM.2012.6478958","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478958","url":null,"abstract":"Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that require intimate integration with the human body. This paper provides an overview of ideas for electronics, sensors and actuators that offer the performance of state-of-the-art, wafer-based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in bio-integrated, `tissue-like' devices with unique diagnostic and therapeutic capabilities, when conformally laminated onto the heart, brain or skin. Demonstrations in animal models and in humans illustrate the diverse functionality offered by these technologies, and suggest several clinically relevant applications.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"64 1","pages":"1.1.1-1.1.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75376951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 10kV vacuum switch with negative electron affinity of diamond p-i-n electron emitter 金刚石p-i-n电子发射器负电子亲和的10kV真空开关
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479000
D. Takeucni, S. Koizumi, T. Makino, H. Kato, M. Ogura, H. Okusni, H. Onasni, S. Yamasaki
{"title":"A 10kV vacuum switch with negative electron affinity of diamond p-i-n electron emitter","authors":"D. Takeucni, S. Koizumi, T. Makino, H. Kato, M. Ogura, H. Okusni, H. Onasni, S. Yamasaki","doi":"10.1109/IEDM.2012.6479000","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479000","url":null,"abstract":"This paper presents experimental results of a negative electron affinity (NEA) electron emitter using a diamond p-i-n diode which achieves a power transmission efficiency of 73.7 % at 10 kV during RT operations first time. This result proves that a vacuum switches of 100 kV made of diamond can be operated beyond 99.9% efficiency in principle.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"43 1","pages":"7.6.1-7.6.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75586131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors 如何实现透明氧化物半导体图像传感器的超高光导增益
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479094
Sungsik Lee, S. Jeon, J. Robertson, A. Nathan
{"title":"How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors","authors":"Sungsik Lee, S. Jeon, J. Robertson, A. Nathan","doi":"10.1109/IEDM.2012.6479094","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479094","url":null,"abstract":"We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"40 1","pages":"24.3.1-24.3.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81120693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics 高κ/ SiO2双分子层和SiO2栅极电介质中TDDB电压加速的温度依赖性
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479123
E. Wu, J. Suñé, C. LaRow, R. Dufresne
{"title":"Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics","authors":"E. Wu, J. Suñé, C. LaRow, R. Dufresne","doi":"10.1109/IEDM.2012.6479123","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479123","url":null,"abstract":"In this work, experimental evidence of time-to-breakdown power-law voltage acceleration for high-κ/SiO2 bilayer dielectrics is presented. The temperature dependence of voltage acceleration power-law exponents for high-κ/SiO2 bilayer stressed in pFET inversion is found to be comparable to those of SiO2 dielectrics. In addition, the temperature-dependence of voltage acceleration for progressive BD mode is reported. On the other hand, we present a thermally assisted hydrogen release-reaction model which can explain three key experimental observations: (1) the temperature dependence of voltage acceleration exponents, (2) the non-Arrhenius temperature dependence of TDDB, and (3) the large activation energy at high temperatures.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"40 1","pages":"28.5.1-25.5.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86338199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector 基于HfOx的无单元选择器的高性价比三维交叉点结构垂直电阻随机存取存储器
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479083
Hong-Yu Chen, Shimeng Yu, B. Gao, Peng Huang, Jinfeng Kang, H. Wong
{"title":"HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector","authors":"Hong-Yu Chen, Shimeng Yu, B. Gao, Peng Huang, Jinfeng Kang, H. Wong","doi":"10.1109/IEDM.2012.6479083","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479083","url":null,"abstract":"Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<;50μA), switching speed (~50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (~100kΩ) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"76 1","pages":"20.7.1-20.7.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86827183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 133
30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance 采用MOCVD在Si衬底上生长30nm增强模式In0.53Ga0.47As mosfet，具有高跨导性和低导通电阻
2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479153
Xiuju Zhou, Qiang Li, C. Tang, K. Lau
{"title":"30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance","authors":"Xiuju Zhou, Qiang Li, C. Tang, K. Lau","doi":"10.1109/IEDM.2012.6479153","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479153","url":null,"abstract":"This paper describes the development of 30nm enhancement-mode In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs grown on Si substrates featuring Al<sub>2</sub>O<sub>3</sub>/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V<sub>ds</sub>=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"69 1","pages":"32.5.1-32.5.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84151385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
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