30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

Abstract

This paper describes the development of 30nm enhancement-mode In_0.53Ga_0.47As MOSFETs grown on Si substrates featuring Al₂O₃/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V_ds=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.