擦除后瞬态v移的起源及其对二维/三维结构电荷阱闪存单元操作的影响

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6478964

Jong Kyung Park, Dong-il Moon, Yang‐Kyu Choi, Seok-Hee Lee, Ki-hong Lee, S. Pyi, B. Cho

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引用次数: 11

摘要

详细研究了擦除后瞬态v移的机理。得出了电荷阱层空穴重分布的主要机理。提出了一种新的擦除方案，并进行了验证。研究了瞬态v移对三维电荷阱器件的影响。

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Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.

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2012 International Electron Devices Meeting

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