{"title":"具有改进结构的InGaAs/InP SPAD，具有锐利的时序响应","authors":"A. Tosi, F. Acerbi, M. Anti, F. Zappa","doi":"10.1109/IEDM.2012.6479095","DOIUrl":null,"url":null,"abstract":"We designed and fabricated a 25 μm active area diameter In0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (~30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"42 1","pages":"24.4.1-24.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs/InP SPAD with improved structure for sharp timing response\",\"authors\":\"A. Tosi, F. Acerbi, M. Anti, F. Zappa\",\"doi\":\"10.1109/IEDM.2012.6479095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We designed and fabricated a 25 μm active area diameter In0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (~30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"42 1\",\"pages\":\"24.4.1-24.4.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InGaAs/InP SPAD with improved structure for sharp timing response
We designed and fabricated a 25 μm active area diameter In0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (~30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).
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