IEEE Transactions on Device and Materials Reliability最新文献_第4页

IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575830

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Reliability of Advanced Nodes 高级节点可靠性

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575822

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IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3558210

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Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices(TED) IEEE电子设备汇刊（TED）总编辑提名公告

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3558656

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Temperature Dependence of Single-Event Burnout Across Varying LET Levels 不同LET水平的单事件燃尽的温度依赖性

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3578041

Fengkai Liu;Zhijie Zhou;Yadong Wei;Xiaodong Xu;Zhongli Liu;Jianqun Yang;Xingji Li

{"title":"Temperature Dependence of Single-Event Burnout Across Varying LET Levels","authors":"Fengkai Liu;Zhijie Zhou;Yadong Wei;Xiaodong Xu;Zhongli Liu;Jianqun Yang;Xingji Li","doi":"10.1109/TDMR.2025.3578041","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3578041","url":null,"abstract":"This study investigates the influence of temperature on single-event burnout (SEB) in n-channel 115-V-rated vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) subjected to irradiation by heavy ions of krypton and tantalum. The experiments spanned a temperature range from 25°C to 200°C, and it is indicated that a marked reduction in SEB sensitivity as the temperature increased. Our analysis methodically examines the interplay among the parasitic bipolar junction transistor (BJT) feedback mechanism, avalanche multiplication, charge collection, and SEB triggering processes. We propose a hypothesis that elevated temperatures decrease carrier mobility, reduce carrier lifetime, and diminish the impact ionization rate, which collectively leads to a reduction in charge collection and attenuates the lateral base current, thereby lowering SEB sensitivity. This hypothesis was substantiated through technology computer-aided design (TCAD) simulations. The findings reveal a consistent pattern in the temperature’s effect on SEB across all linear energy transfer (LET) levels examined, providing essential insights for the utilization of power VDMOS transistors in high-temperature, intense-radiation environments such as those encountered in space applications.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"698-706"},"PeriodicalIF":2.3,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators 探索基于石墨烯微带线衰减器的最佳解决方案

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3578061

Yuhan Li;Cheng Chen;Jingfeng Liu;Jiaxuan Xue;Jixin Wang;Wu Zhao;Zhiyong Zhang;Johan Stiens

{"title":"Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators","authors":"Yuhan Li;Cheng Chen;Jingfeng Liu;Jiaxuan Xue;Jixin Wang;Wu Zhao;Zhiyong Zhang;Johan Stiens","doi":"10.1109/TDMR.2025.3578061","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3578061","url":null,"abstract":"This study explores optimization strategies for the attenuation performance and modulation depth of Graphene-based Microstrip Line Attenuators (GMSLAs). Existing GMSLAs mainly rely on rectangular attenuation units, such as single-layer graphene sheets and graphene composite sandwich structures, which have limitations in meeting diverse performance requirements. To address this, this study systematically investigates which configuration within the same class of structures yields the most optimal and reliable attenuation performance. Using finite element simulations, this study systematically examines the attenuation performance and modulation characteristics of graphene ring-shaped attenuation units with five distinct geometric configurations (circle, regular triangle, square, regular pentagon, and regular hexagon) in the 40-70 GHz V-band. The results indicate that among individual units, the hexagonal unit exhibits the highest average reflection transmission loss and modulation depth. The triangular unit demonstrates a relatively stable and high average reflection transmission loss as well as the most stable modulation depth, whereas the square unit possesses the most stable average reflection transmission loss. Furthermore, by adjusting the rotation angle of the hexagonal units, significant polarization-dependent attenuation was observed. When combining multiple hexagonal units, their performance exceeded the simple sum of individual unit performances, showing superlinear growth. This study overcomes the limitations of traditional graphene attenuation unit designs by introducing a range of geometric configurations, offering new insights into the development of highly efficient, tunable attenuators with superior performance in high-frequency bands.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"617-628"},"PeriodicalIF":2.3,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Investigation of Degradation and Failure Mechanism in 1200-V Planar SiC MOSFET Under Statical Accelerated Lifetime Test 静态加速寿命试验下1200 v平面SiC MOSFET退化失效机理研究

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3577612

J. Tang;Y. Duan;P. Liu

{"title":"Investigation of Degradation and Failure Mechanism in 1200-V Planar SiC MOSFET Under Statical Accelerated Lifetime Test","authors":"J. Tang;Y. Duan;P. Liu","doi":"10.1109/TDMR.2025.3577612","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3577612","url":null,"abstract":"The rapid advancement of power electronics applications has propelled the development of SiC MOSFETs while simultaneously posing challenges to their long-term reliability. To address this, the reliability issues associated with long-term stress are comprehensively explored through Accelerated Life Tests’ (ALTs’) verification protocols, aiming to optimize devices and enhance experimental methodologies. 16 sets of ALT experiments were conducted under maximum Tj conditions for HTGB, HTRB, and H3TRB tests, divided into groups around rated voltage conditions. The correlation between stress and degradation is examined by comparing offline data at both 25°C and 175°C. In HTRB tests, precursors of failures are confirmed with further investigation into failure modes. For HTGB experiments, the degradation in the gate oxide under gate bias is characterized using the Tj-Vth and C-V methods. Additionally, the device failures due to HV-H3TRB are analyzed by electrical measurement and acoustic scanning. The experimental findings provide insights that inform the design of subsequent ALT experiments.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"441-451"},"PeriodicalIF":2.3,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575820

引用次数: 0

A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process 基于相位非线性维纳过程的IGBT寿命预测方法

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-02 DOI: 10.1109/TDMR.2025.3575598

Anran Hua;Yanbo Che;Peiyi Li;Mengxiang Zheng

{"title":"A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process","authors":"Anran Hua;Yanbo Che;Peiyi Li;Mengxiang Zheng","doi":"10.1109/TDMR.2025.3575598","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3575598","url":null,"abstract":"The Insulated Gate Bipolar Transistor (IGBT) is a critical component of power electronic devices, and its reliability significantly impacts the overall system performance. To enhance IGBT reliability assessment in the context of modular multilevel converters (MMCs), this study proposes a remaining useful life (RUL) prediction method based on a phased nonlinear Wiener process. By analyzing the failure mechanisms of IGBTs, the turn-off peak voltage and the collector-emitter saturation voltage are identified as key degradation indicators. A piecewise nonlinear Wiener degradation model is employed for RUL prediction, with gradient change detection method used to dynamically determine segmentation points. The proposed model accounts for the stochastic effects of the drift coefficient and measurement errors, with Kalman filtering algorithm applied to update random parameters in real time. Based on accelerated aging test data, the proposed method is compared with the standard Wiener model, the Wiener model considering only drift coefficient randomness, and other recent RUL prediction methods that do not rely on the Wiener process. The results demonstrate that the proposed approach achieves higher prediction accuracy and computational efficiency, particularly in scenarios with significant fluctuations in degradation indicators, making it highly promising for engineering applications.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"545-556"},"PeriodicalIF":2.3,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145050837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The First Switch Effect in Ferroelectric Field-Effect Transistors 铁电场效应晶体管中的第一开关效应

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-02 DOI: 10.1109/TDMR.2025.3576042

Priyankka Ravikumar;Prasanna Venkatesan;Chinsung Park;Nashrah Afroze;Mengkun Tian;Winston Chern;Suman Datta;Shimeng Yu;Souvik Mahapatra;Asif Khan

{"title":"The First Switch Effect in Ferroelectric Field-Effect Transistors","authors":"Priyankka Ravikumar;Prasanna Venkatesan;Chinsung Park;Nashrah Afroze;Mengkun Tian;Winston Chern;Suman Datta;Shimeng Yu;Souvik Mahapatra;Asif Khan","doi":"10.1109/TDMR.2025.3576042","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3576042","url":null,"abstract":"In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We show that these two devices, with a silicon channel, exhibit similar pristine state transfer characteristics but starkly different endurance characteristics. In contrast to the MOSFET, the FEFET shows a significant increase in sub-threshold swing in the first write pulse. Based on this, we reveal that this first write pulse (cycle 1) generates more than half of the total traps generated during the fatigue cycling in FEFETs. We call this the “First Switch Effect”. Further, by polarizing a pristine FEFET step by step, we demonstrate a direct correlation between the switched polarization and interface trap density during the first switch. Through charge pumping measurements, we also observe that continued cycling generates traps more towards the bulk of the stack, away from the Si/SiO2 interface in FEFETs. We establish that: (1) the first switch effect leads to approximately 50% of the total trap density (Nit) near the Si/SiO2 interface until memory window closure; and (2) further bipolar cycling leads to trap generation both at and away from Si/SiO2 interface in FEFETs.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"365-370"},"PeriodicalIF":2.3,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145050791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0