IEEE Transactions on Device and Materials Reliability最新文献_第4页

Modeling of Threshold Voltage Degradation of 22nm FD-SOI nMOSFETs Under Dynamic Voltage Scaling 动态电压扩展下 22 纳米 FD-SOI nMOSFET 的阈值电压衰减建模

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-06-13 DOI: 10.1109/TDMR.2024.3414181

Yibo Hu;Hao Ge;Zhipeng Ren;Yizhe Yin;Jing Chen

引用次数: 0

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 厚底电介质垂直氮化镓沟槽 MOSFET 的动态可靠性评估

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-06-03 DOI: 10.1109/TDMR.2024.3408293

Yu Zhang;Renqiang Zhu;Haolan Qu;Yitian Gu;Huaxing Jiang;Kei May Lau;Xinbo Zou

{"title":"Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric","authors":"Yu Zhang;Renqiang Zhu;Haolan Qu;Yitian Gu;Huaxing Jiang;Kei May Lau;Xinbo Zou","doi":"10.1109/TDMR.2024.3408293","DOIUrl":"10.1109/TDMR.2024.3408293","url":null,"abstract":"Dynamic stability of quasi-vertical GaN trench MOSFETs featuring a thick bottom dielectric (TBD) is thoroughly investigated. Degradation in forward drain current was observed as applying gate or drain stressing voltage, and further studied by time-resolved measurements. The drain current of the device can be maintained at 79%, compared to 61% of a reference device without TBD. Meanwhile, repeated switching tests conducted within a short on-state time demonstrate that the current collapse is confined to 10% after 500 switching cycles. The current collapse is related to electron capture at the dielectric/GaN interface, and the introduction of TBD reduces the electric field within the dielectric layer and suppresses the capture process of traps. Positive gate bias-induced threshold instability of the device with and without TBD is investigated. For the device with TBD, a small positive threshold voltage shift of 1 V is obtained. In addition, the effect of drain stressing voltage on devices is also revealed. High-resolution drain current transient spectroscopy displays the drain current reduction, attributing the degradation to captured electrons in the n--GaN layer. A capture activation energy of 0.26 eV is revealed by deep level transient spectroscopy. These findings reveal the efficacy of TBD inclusion in improving gate stability of GaN MOSFETs and underscore the critical importance of high-quality epitaxial growth for ensuring the stability of vertical devices. The stability characterization serves as a valuable reference for the development of reliable quasi-vertical GaN MOSFET devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 3","pages":"358-364"},"PeriodicalIF":2.5,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb2Se3 Antimony Solar Cells 预测 Sb2Se3 锑太阳能电池光电效率的衰减和恢复趋势

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-05-27 DOI: 10.1109/tdmr.2024.3405659

Ming-Lang Tseng, Nima E. Gorji

引用次数: 0

Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 基于随机电报噪声的真正随机数生成器设计指南

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-29 DOI: 10.1109/TDMR.2024.3394576

Tommaso Zanotti;Alok Ranjan;Sean J. O’Shea;Nagarajan Raghavan;Ramesh Thamankar;Kin Leong Pey;Francesco Maria Puglisi

{"title":"Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators","authors":"Tommaso Zanotti;Alok Ranjan;Sean J. O’Shea;Nagarajan Raghavan;Ramesh Thamankar;Kin Leong Pey;Francesco Maria Puglisi","doi":"10.1109/TDMR.2024.3394576","DOIUrl":"10.1109/TDMR.2024.3394576","url":null,"abstract":"The development of a robust and secure hardware for the Internet of Things (IoT) and edge computing requires improvements in the existing low-power and low-cost hardware security primitives. Among the various available technologies, true random number generators (TRNGs) that leverage random telegraph noise (RTN) from nanoelectronics devices have emerged as effective solutions. However, the temporal instabilities in the RTN signal, such as the DC drift and temporary inhibition, are a few of the key reliability challenges for the TRNG circuits. In this study, we have utilized experimental RTN data collected from the commonly used gate dielectrics, including silicon dioxide (SiO2), hafnium dioxide (HfO2), and 2D crystalline hexagonal boron nitride (h-BN) to identify the crucial reliability challenges for RTN-based TRNG circuits. We have analyzed the impact of RTN instabilities and of circuit parameters on the output randomness and propose reliability aware design guidelines. Finally, we design and simulate an RTN-based TRNG circuit using a 130 nm CMOS technology and evaluate its reliability at the circuit level.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"184-193"},"PeriodicalIF":2.5,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Aging Monitoring Method of Bond Wires Based on Voltage Ringing Frequency Characteristics in IGBT Modules 基于 IGBT 模块电压振铃频率特性的键合丝老化监测方法

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-29 DOI: 10.1109/TDMR.2024.3394517

Xiyuan Huang;Mingxing Du;Hongze Fu;Sai Gao

引用次数: 0

Device Reliability and Effect of Temperature on Memristors: Nanostructured V₂O₅ 器件可靠性和温度对晶闸管的影响：纳米结构 V2O5

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-23 DOI: 10.1109/TDMR.2024.3392634

Sharmila B;Ashutosh Kumar Dikshit;Priyanka Dwivedi

引用次数: 0

Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond 针对 130 纳米至 28 纳米节点及更高节点超大规模器件的离态 TDDB 下通用介质击穿建模

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-22 DOI: 10.1109/TDMR.2024.3387271

Tidjani Garba-Seybou;Alain Bravaix;Xavier Federspiel;Joycelyn Hai;Cheikh Diouf;Florian Cacho

{"title":"Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond","authors":"Tidjani Garba-Seybou;Alain Bravaix;Xavier Federspiel;Joycelyn Hai;Cheikh Diouf;Florian Cacho","doi":"10.1109/TDMR.2024.3387271","DOIUrl":"10.1109/TDMR.2024.3387271","url":null,"abstract":"This study investigates the commonality Of TDDB under Off-state conditions across a range of CMOS nodes, from 130nm to ultra-scaled devices, i.e., 28nm FDSOI CMOS. To achieve this, Off-mode gate-oxide breakdown is analyzed under non-uniform electric field to investigate the effects of stress-induced leakage current, channel current, and lateral electric field in dielectric breakdown mechanism related to RF operations using ultra short channel devices. Oxide breakdown is characterized under DC stress with different gate-length LG as a function of drain voltage VDS and temperature. The study indicates that sub-threshold leakage current is a critical factor in determining the Off-state TDDB degradation, which is caused by a combination of band-to-band tunneling mechanism, junction current and impact ionization phenomena. The proposed Off-state TDDB compact model confirms that the leakage current is a reliable indicator of TDDB dependence precursor to hard-breakdown. Additionally, the paper discusses potential causes of the higher form factor \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000 value for PFET under Off-mode stressing, which may be attributed to high impact ionization, non-conducting hot-carrier effects, defect generation kinetics and a thinner defect cell size.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"174-183"},"PeriodicalIF":2.5,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140635661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of Temperature Rises at Focal-Plane-Array and Their Impact on the Performance of a CCD-Based Spaceborne Earth-Observing Imaging System 焦平面阵列温度上升模型及其对基于 CCD 的空间地球观测成像系统性能的影响

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-18 DOI: 10.1109/TDMR.2024.3390798

Chahira Serief;Nassima Khorchef;Youcef Ghelamallah

{"title":"Modeling of Temperature Rises at Focal-Plane-Array and Their Impact on the Performance of a CCD-Based Spaceborne Earth-Observing Imaging System","authors":"Chahira Serief;Nassima Khorchef;Youcef Ghelamallah","doi":"10.1109/TDMR.2024.3390798","DOIUrl":"10.1109/TDMR.2024.3390798","url":null,"abstract":"Space optical imaging systems are subject during their in-orbit lifetime to many damaging effects caused by aging and harsh conditions (temperature and radiation) in the low Earth orbit environment threatening consequently instruments’ performance and durability. In particular, the time-dependent increase of the detector’s thermally-induced dark current due to temperature rises at the Focal-Plane-Array (FPA) may well lead to an unacceptable degradation in the radiometric performance of the optical imager. The aim of this work is to establish measures for the mitigation of FPA thermal effects on the radiometric performance and calibration of a space-borne optical imaging payload through FPA design optimization and in-orbit operation of the optical imaging payload. The temperature rises at FPA during long strip acquisition are first modeled, and results are used to assess the consequent effect on radiometric performance by predicting time-variable changes in detector offset due to thermal leakage current. Then, based on the outcomes of the thermal model and offset signals calculation, recommendations regarding FPA design and the operation of the optical imaging payload are made to mitigate the effect of FPA temperature rises on the imager’s radiometric performance. Finally, in-flight FPA temperature measurements taken during on-orbit operation are compared with the FPA thermal model results. The modeling results exhibit a strong correspondence with the measurements acquired during the flight. The dark current derived from in-flight data demonstrates that the time-dependent increase in the detector offset signals induced by temperature rises at FPA during image acquisition is negligible, validating the proposed thermal mitigation strategy.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"335-343"},"PeriodicalIF":2.5,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140624935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width 具有不同 JFET 宽度的六角形平面 SiC VDMOSFET 的特性和 UIS 研究

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-16 DOI: 10.1109/TDMR.2024.3388482

Hou-Cai Luo;Huan Wu;Jing-Ping Zhang;Bo-Feng Zheng;Lei Lang;Guo-Qi Zhang;Xian-Ping Chen

{"title":"Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width","authors":"Hou-Cai Luo;Huan Wu;Jing-Ping Zhang;Bo-Feng Zheng;Lei Lang;Guo-Qi Zhang;Xian-Ping Chen","doi":"10.1109/TDMR.2024.3388482","DOIUrl":"10.1109/TDMR.2024.3388482","url":null,"abstract":"The hexagonal cell topology of planar SiC VDMOSFETs with varied JFET width (LJFET) are designed and manufactured in this study. L\u0000<inline-formula> <tex-math>${_{text {JFET}}} = 1.4mu $ </tex-math></inline-formula>\u0000m has the best HF-FOM (R\u0000<inline-formula> <tex-math>${_{text {on}}} times $ </tex-math></inline-formula>\u0000Cgd) and HF-FOM (R\u0000<inline-formula> <tex-math>${_{text {on}}} times $ </tex-math></inline-formula>\u0000Qgd) by comparing the dynamic and static parameters of each design. Besides, the UIS reliability and failure mechanism for series designs are investigated by experiment and TCAD simulation. The results show that the high temperature is generated by energy dissipation during avalanche and it drives the parasitic BJT conduction, causing Ids out of control and instantaneous heat concentration in a very short time. The extremely high temperature causes internal cracking of the material and metal melting, resulting in gate-source short circuit and device damage. It would provide suggestions for device design and reliability consideration.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"323-328"},"PeriodicalIF":2.5,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140608373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs 功率 GaN HEMT 中陷阱效应的老化可靠性紧凑建模

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-12 DOI: 10.1109/TDMR.2024.3387573

Yanfeng Ma;Sheng Li;Mengli Liu;Weihao Lu;Mingfei Li;Siyang Liu;Long Zhang;Jiaxing Wei;Lanlan Yang;Weifeng Sun;Jiaxin Sun

{"title":"Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs","authors":"Yanfeng Ma;Sheng Li;Mengli Liu;Weihao Lu;Mingfei Li;Siyang Liu;Long Zhang;Jiaxing Wei;Lanlan Yang;Weifeng Sun;Jiaxin Sun","doi":"10.1109/TDMR.2024.3387573","DOIUrl":"10.1109/TDMR.2024.3387573","url":null,"abstract":"This article proposes an aging reliability compact model with high accuracy to simulate trap effects after long-term aging in power Gallium Nitride (GaN) based high electron mobility transistors (HEMTs). Dynamic on-state resistance \u0000<inline-formula> <tex-math>$(R_{mathrm{ on,dy}})$ </tex-math></inline-formula>\u0000 caused by trap effects is taken as an example to deliver the aging reliability modeling concepts and flows. Based on the mechanism of trap effects and accelerated-stress experiments, the variation model of electron mobility has been established, so that the degradation of \u0000<inline-formula> <tex-math>$R_{mathrm{ on,dy}}$ </tex-math></inline-formula>\u0000 after aging can be predicted. The structure of the advanced SPICE model for GaN HEMT (ASM-HEMT) is modified to integrate the mobility variation model into SPICE for convenient usage. In addition, the accuracy of the proposed model has been verified, and the RMSE value between measured data and simulated data under long-term high temperature reverse bias stress conditions is only 1.68%, thus the hazard of the power system caused by traps can be discovered and avoided in advance.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"313-322"},"PeriodicalIF":2.5,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0