2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)最新文献_第7页

Conduction Mechanism of Polyaniline/Reduced Graphene Oxide/Ag2O Nanocomposite 聚苯胺/还原氧化石墨烯/Ag2O纳米复合材料的导电机理

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179888

Sayantan Sinha, Sumitra Nongthombam, N. A. Devi, S. Rai, R. Bhujel, W. I. Singh, A. Biswas, B. Swain

引用次数: 1

Evaluation of Selectivity and Sensitivity of Heterostructure Junction-Less DG-MOSFET Based Biosensor Considering Heating Effect 考虑热效应的异质结构无结DG-MOSFET生物传感器的选择性和灵敏度评价

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179950

Sourav Chakraborty, Dipanjan Sen, Savio Jay Sengupta, Swarnil Roy

引用次数: 1

Spectral Tuning of Gold Nanoparticles Embedded in Dielectric by Changing Anisotropy and Interparticle Interaction: A Mathematical Correlation between the Shape and Interaction 通过改变各向异性和粒子间相互作用嵌入电介质中的金纳米粒子的光谱调谐:形状与相互作用之间的数学关系

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179927

J. K. Majhi

{"title":"Spectral Tuning of Gold Nanoparticles Embedded in Dielectric by Changing Anisotropy and Interparticle Interaction: A Mathematical Correlation between the Shape and Interaction","authors":"J. K. Majhi","doi":"10.1109/VLSIDCS47293.2020.9179927","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179927","url":null,"abstract":"The theoretical studies of optical absorption (OA) properties of anisotropic non-interacting Au nanoparticles (NPs) and the spherical interacting Au NPs embedded in dielectric matrix have been carried out separately. For the studies we have considered a modified Garcia et al. model depend on Maxwell-Garnett (MG) theory where anisotropy of the particles are represented by a parameter β known as shape parameter and interaction is represented by the parameter K. For calculation of OA spectra of anisotropic particles, the values of β is varied from 0.05 to 1.0, considering K = 0 and keeping particle radius fixed at R = 2 nm. The OA spectra of anisotropic Au NPs in the above range of β exhibit a large redshift of surface plasmon resonance (SPR) from 500 - 832 nm in contrary to what is observed for spherical non-interacting particle of same size at an around 520 nm. An exponential type decay of SPR peak position with increase of β has also been observed. The almost similar nature of OA spectra and the decay behavior of the SPR peak with decrease of K have also been observed for interacting spherical Au NPs by varying the interaction parameter K from 20 to 80 of same particle size. The observation gives a correlation between the parameter β and K which was not established. This correlation is essential and helpful for different applications of anisotropic Au nanoparticles in plasmonic, surface enhanced Raman scattering (SERC), photonics, optoelectronics, and others.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115705170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Single-Component Fractional-Order Capacitor Based on Graphene Nanosheet/P(VDF) Composite: Synthesis and Analysis 基于石墨烯纳米片/P(VDF)复合材料的新型单组分分数级电容器:合成与分析

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179871

Zaid Mohammad Shah, F. A. Khanday, Z. A. Jhat

引用次数: 1

Double Gate p-n-p-n TFET with Hetero Oxide Dielectric and High-K Spacer Engineering 双栅p-n-p-n TFET与异质氧化物介电和高k间隔层工程

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179943

Sudipta Ghosh, Prithviraj Pachal, Rahul Kumar, S. Kundu, J. Ghosh, S. Sarkar

引用次数: 1

Design and Analysis of Bulk and Junctionless MOSFET Based Circuits for Low Power Applications 基于MOSFET的低功耗无结体电路的设计与分析

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179929

Saurabh Halder, Rahul Paul, Swarnil Roy

引用次数: 0

Current Reference Circuit Operable at Low Voltages Using Composite MOS Triode Resistor 可在低电压下使用复合MOS三极管电阻的电流基准电路

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179868

K. Sharma, Rahul Kumar Tripathi, H. S. Jatana, R. Pandey, Jaya Madan, Preeti Sharma, Rajnish Sharma

{"title":"Current Reference Circuit Operable at Low Voltages Using Composite MOS Triode Resistor","authors":"K. Sharma, Rahul Kumar Tripathi, H. S. Jatana, R. Pandey, Jaya Madan, Preeti Sharma, Rajnish Sharma","doi":"10.1109/VLSIDCS47293.2020.9179868","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179868","url":null,"abstract":"Invasive biomedical applications involving acquisition and recording of biological signals require current reference generation circuits for low voltage front-end amplifier and filter circuits. However, achieving current reference using Self-Biased Current Source (SBCS) for these circuits at same low supply voltages poses requirement of resistors. In this work, we compare the effect of passive poly resistor and Composite Triode MOS Resistor (CTMR) on the performance of low voltage SBCS circuit using 0.18 µm standard SCL foundry process parameters and models of MOS, capacitor and resistor. For current reference generation of 371 nA, the temperature coefficient (ppm/degree Celsius) values for passive poly resistor and CTMR are 2400 and 2251 respectively. The Figure of Merit, FOM (ppm/degree Celsius) and Coefficient of variance (CV) at different process corners with Monte-carlo simulation (MCS) runs of 100 for CTMR are 0.93 and 0.16 times lower than that of passive poly resistor. The CTMR based SBCS is anticipated to be used in low voltage front-end biomedical applications.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124816891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Multi-Stage-Multi-Iterative Optimization Algorithm for Design Optimization of Multi-Quantum Well Terahertz IMPATT Sources 多量子阱太赫兹impt源设计优化的多阶段多迭代优化算法

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179952

S. Chakraborty, A. Acharyya, A. Biswas, A. Kundu

{"title":"Multi-Stage-Multi-Iterative Optimization Algorithm for Design Optimization of Multi-Quantum Well Terahertz IMPATT Sources","authors":"S. Chakraborty, A. Acharyya, A. Biswas, A. Kundu","doi":"10.1109/VLSIDCS47293.2020.9179952","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179952","url":null,"abstract":"A multi-stage-multi-iterative optimization (MSMIO) algorithm has been proposed in this paper for optimizing the design parameters of MQW DDR IMPATT diode based terahertz (THz) sources based on AlxGa1-xN~GaN heterostructures. The optimization has been carried out subject to achieve favourable large-signal (L-S) as well as avalanche noise characteristics of the source designed to operate at 1.0 THz. Six major parameters associated with the MQW structure, such as (i) mole fraction of Al in AlxGa1-xN, (ii) thickness of AlxGa1-xN layers, (iii) corresponding doping concentrations, (iv) thickness of GaN layers, (v) corresponding doping concentrations and (vi) bias current density are optimized subject to attain highest efficiency as well as lowest noise measure of the 1.0 THz source. The L-S and noise characteristics of optimized as well as un-optimized MQW DDR structures are compared in order to verify the proficiency of the algorithm; comparison is also done between simulation and experimental results of 1.0 THz oscillators based on other semiconductors reported earlier.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132278261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

GPSO Hybrid Algorithm for Rectilinear Steiner Tree Optimization 线性斯坦纳树优化的GPSO混合算法

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179861

Subhrapratim Nath, Sagnik Gupta, S. Biswas, Rupam Banerjee, J. Sing, Subir Kumar Sarkar

引用次数: 4

Differential Evolution Algorithm Based Energy Management of Residential Microgrid Under Appliance Scheduling DSM 基于差分进化算法的住宅微电网用电需求管理

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179893

Pritam Chandra, A. Das, Chitresh Das, Aritra Naskar, Biswarup Ganguly, Subho Paul

引用次数: 1