Sourav Chakraborty, Dipanjan Sen, Savio Jay Sengupta, Swarnil Roy
{"title":"考虑热效应的异质结构无结DG-MOSFET生物传感器的选择性和灵敏度评价","authors":"Sourav Chakraborty, Dipanjan Sen, Savio Jay Sengupta, Swarnil Roy","doi":"10.1109/VLSIDCS47293.2020.9179950","DOIUrl":null,"url":null,"abstract":"In this article, the sensitivity and selectivity of a Si-Ge Hetero-structure Junction-less Double Gate MOSFET (DG-MOSFET) based biosensor has been analyzed by introducing the self-heating issue, when the bio-particles get trapped inside the underlap or cavity region of the sensor. Sensitivity of the proposed device has been analyzed in terms of threshold voltage variation by considering the dielectric modulation method and also by considering the temperature variation. However, the prime focus is to accurately select the temperature range to avoid the performance degradation due to the self-heating issue. Simulation results are obtained by using SILVACO ATLAS tool. So, change in threshold voltage of the device has been considered as the sensing element to study the existence of bio-particles being trapped in the cavity region of the device. Sub-threshold operation has been considered here while analyzing the sensor performance.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"69 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Evaluation of Selectivity and Sensitivity of Heterostructure Junction-Less DG-MOSFET Based Biosensor Considering Heating Effect\",\"authors\":\"Sourav Chakraborty, Dipanjan Sen, Savio Jay Sengupta, Swarnil Roy\",\"doi\":\"10.1109/VLSIDCS47293.2020.9179950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, the sensitivity and selectivity of a Si-Ge Hetero-structure Junction-less Double Gate MOSFET (DG-MOSFET) based biosensor has been analyzed by introducing the self-heating issue, when the bio-particles get trapped inside the underlap or cavity region of the sensor. Sensitivity of the proposed device has been analyzed in terms of threshold voltage variation by considering the dielectric modulation method and also by considering the temperature variation. However, the prime focus is to accurately select the temperature range to avoid the performance degradation due to the self-heating issue. Simulation results are obtained by using SILVACO ATLAS tool. So, change in threshold voltage of the device has been considered as the sensing element to study the existence of bio-particles being trapped in the cavity region of the device. Sub-threshold operation has been considered here while analyzing the sensor performance.\",\"PeriodicalId\":446218,\"journal\":{\"name\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"volume\":\"69 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIDCS47293.2020.9179950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS47293.2020.9179950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of Selectivity and Sensitivity of Heterostructure Junction-Less DG-MOSFET Based Biosensor Considering Heating Effect
In this article, the sensitivity and selectivity of a Si-Ge Hetero-structure Junction-less Double Gate MOSFET (DG-MOSFET) based biosensor has been analyzed by introducing the self-heating issue, when the bio-particles get trapped inside the underlap or cavity region of the sensor. Sensitivity of the proposed device has been analyzed in terms of threshold voltage variation by considering the dielectric modulation method and also by considering the temperature variation. However, the prime focus is to accurately select the temperature range to avoid the performance degradation due to the self-heating issue. Simulation results are obtained by using SILVACO ATLAS tool. So, change in threshold voltage of the device has been considered as the sensing element to study the existence of bio-particles being trapped in the cavity region of the device. Sub-threshold operation has been considered here while analyzing the sensor performance.