Multi-Stage-Multi-Iterative Optimization Algorithm for Design Optimization of Multi-Quantum Well Terahertz IMPATT Sources

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI:10.1109/VLSIDCS47293.2020.9179952

S. Chakraborty, A. Acharyya, A. Biswas, A. Kundu

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引用次数: 2

Abstract

A multi-stage-multi-iterative optimization (MSMIO) algorithm has been proposed in this paper for optimizing the design parameters of MQW DDR IMPATT diode based terahertz (THz) sources based on AlxGa1-xN~GaN heterostructures. The optimization has been carried out subject to achieve favourable large-signal (L-S) as well as avalanche noise characteristics of the source designed to operate at 1.0 THz. Six major parameters associated with the MQW structure, such as (i) mole fraction of Al in AlxGa1-xN, (ii) thickness of AlxGa1-xN layers, (iii) corresponding doping concentrations, (iv) thickness of GaN layers, (v) corresponding doping concentrations and (vi) bias current density are optimized subject to attain highest efficiency as well as lowest noise measure of the 1.0 THz source. The L-S and noise characteristics of optimized as well as un-optimized MQW DDR structures are compared in order to verify the proficiency of the algorithm; comparison is also done between simulation and experimental results of 1.0 THz oscillators based on other semiconductors reported earlier.

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多量子阱太赫兹impt源设计优化的多阶段多迭代优化算法

针对基于AlxGa1-xN~GaN异质结构的MQW DDR IMPATT二极管太赫兹源，提出了一种多阶段多迭代优化算法(MSMIO)。为了实现大信号(L-S)以及设计在1.0太赫兹工作的源的雪崩噪声特性，进行了优化。与MQW结构相关的6个主要参数，如(i) AlxGa1-xN中Al的摩尔分数，(ii) AlxGa1-xN层的厚度，(iii)相应的掺杂浓度，(iv) GaN层的厚度，(v)相应的掺杂浓度和(vi)偏置电流密度，都经过优化，以达到1.0 THz源的最高效率和最低噪声测量。比较了优化后和未优化的MQW DDR结构的L-S特性和噪声特性，验证了算法的有效性;并对基于其他半导体的1.0太赫兹振荡器的仿真结果与实验结果进行了比较。

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2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)

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