Current Reference Circuit Operable at Low Voltages Using Composite MOS Triode Resistor

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI:10.1109/VLSIDCS47293.2020.9179868

K. Sharma, Rahul Kumar Tripathi, H. S. Jatana, R. Pandey, Jaya Madan, Preeti Sharma, Rajnish Sharma

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引用次数: 1

Abstract

Invasive biomedical applications involving acquisition and recording of biological signals require current reference generation circuits for low voltage front-end amplifier and filter circuits. However, achieving current reference using Self-Biased Current Source (SBCS) for these circuits at same low supply voltages poses requirement of resistors. In this work, we compare the effect of passive poly resistor and Composite Triode MOS Resistor (CTMR) on the performance of low voltage SBCS circuit using 0.18 µm standard SCL foundry process parameters and models of MOS, capacitor and resistor. For current reference generation of 371 nA, the temperature coefficient (ppm/degree Celsius) values for passive poly resistor and CTMR are 2400 and 2251 respectively. The Figure of Merit, FOM (ppm/degree Celsius) and Coefficient of variance (CV) at different process corners with Monte-carlo simulation (MCS) runs of 100 for CTMR are 0.93 and 0.16 times lower than that of passive poly resistor. The CTMR based SBCS is anticipated to be used in low voltage front-end biomedical applications.

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可在低电压下使用复合MOS三极管电阻的电流基准电路

涉及生物信号采集和记录的侵入性生物医学应用需要低压前端放大器和滤波电路的电流参考产生电路。然而，在相同的低电源电压下，使用自偏置电流源(SBCS)实现这些电路的电流参考，对电阻提出了要求。在这项工作中，我们比较了无源多电阻和复合三极管MOS电阻(CTMR)对低压SBCS电路性能的影响，采用0.18µm标准SCL铸造工艺参数和MOS、电容和电阻的模型。对于371 nA的基准电流产生，无源电阻和CTMR的温度系数(ppm/摄氏度)分别为2400和2251。在蒙特卡罗模拟(MCS)运行100次时，CTMR在不同工艺角的优值、FOM (ppm/摄氏度)和方差系数(CV)分别比无源电阻低0.93和0.16倍。基于CTMR的SBCS有望用于低压前端生物医学应用。

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2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)

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