{"title":"Exploration of Stepped Recessed Gate Silicon- On-Nothing MOSFET for Enhancing Self Heating Effect","authors":"S. Mishra, S. Mohanty","doi":"10.1109/VLSIDCS47293.2020.9179945","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179945","url":null,"abstract":"A thoughtful analysis of a rectangular grooved stepped gate Silicon-on-nothing (RGSG-SON) MOSFET using TCAD simulator to control the short channel effects (SCEs) is presented in this paper. An evaluation has been performed between SOI and SON grooved gate MOS structures to realize the capability of the proposed structure. The exploration revealed that RGSG-SON MOSFET is more proficient as compared to grooved gate silicon on insulator (SOI) MOS structure with respect to sub-threshold performance and immunity to SCEs. Further the amalgamation of higher thermal conductivity such as air in the buried layer, the proposed structure can suppress the self- heating effect. So this thoughtful exploration is comparatively valuable to investigate the performance development of grooved gate SON over SOI for nano scaled MOSFET.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114282002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A CAD Approach for Accurate Decap Estimation and Allocation for Supply Noise Reduction in SoC","authors":"P. Mitra, P. Alok, A. Sarkar","doi":"10.1109/VLSIDCS47293.2020.9179944","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179944","url":null,"abstract":"This article presents accurate decoupling capacitance (decap) estimation which are commonly used for suppression of power supply noise (PSN) in modern day system-on-chip (SoC). Supply noise is a major issue needs to be addressed for proper functioning which may lead to logic failure in digital integrated circuit. Capacitors directly effects the power consumption and delay parameters and hence the overall performance of integrated circuits. This article deals with flower pollination algorithm for decap estimation of supply noise reduction with a focus in improved performance of the integrated circuit. Also focus has been given for placement of decoupling capacitors. This work presents that supply noise has been reduced considerably with marginal increment in delay and power parameters. This CAD flow can also be used on any system-on-chip design.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124321939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FPGA-Based Digital Down Converter for GSM Application","authors":"Debarshi Datta, P. Mitra, H. Dutta","doi":"10.1109/VLSIDCS47293.2020.9179939","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179939","url":null,"abstract":"The demand for digital down converter (DDC) is the cornerstone technology in software radio standard, which converts the frequency translation, especially in down-converted complex output. This paper briefs design and implementation of reconfigurable DDC that can process input bandwidth about 70MHz to 270 KHz to meet the specifications of Global System for Mobile (GSM) receiver. The proposed design consists of COordinate Rotation Digital Computer (CORDIC) processor and multi-rate decimation filters. By using CORDIC processor the design has achieved maximum spurious-free dynamic range (SFDR). Moreover, implementation of multi-rate decimation filter requires small hardware resources and improves the performance of the DDC design. The proposed DDC has been designed and tested on Xilinx Kintex-7 field programmable gate array (FPGA) board. The advantages of using this flexible DDC can produce a specific output. Experimental results show that the proposed DDC is operated on high processing speed with optimum area to provide cost effective solution in mobile application.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115073877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG- NanoFET","authors":"Kuleen Kumar, Rudra Sankar Dhar","doi":"10.1109/VLSIDCS47293.2020.9179906","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179906","url":null,"abstract":"Strained silicon technology based DG- NanoFET is developed at 14nm gate having capability in order to sustain device feature below 22nm technology node. The newly designed double gate NanoFET developed here constitute of the s-Si and s-SiGe layered system which is directly placed in device channel but the thicknesses of each layers are varied to that in the previously designed 22nm channel length device, which result in mobility of charge carrier increased tri-layered region of narrow channel. This reduction in channel thickness is in line with the existing technology scaling and the device performance resulted in achieving augmented performance. Due to symmetric electrostatic coupling with two gates in the device ballistic transport is experienced by the majority charge carriers. The hetero layered channel DG-NanoFET developed on 14nm gate length also provided 53.5% improvement in drive current to that of 22nm channel length with acceptable leakage current.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115496532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comparative Study Between Silica Gel- Aluminium & Crystalline Silica – Aluminium Composites Developed through P/M Route","authors":"S. Debnath, A. K. Pramanick","doi":"10.1109/VLSIDCS47293.2020.9179901","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179901","url":null,"abstract":"Authors have taken an attempt towards developing silica gel- aluminium composites in which silica percentage was varied from 2.5 Wt. % to 30 Wt. %. Surface morphology of each sintered composite was analyzed with optical microscopy (OM) and scanning electron microscopy (SEM). Accordance with surface morphology analysis, various physical and mechanical properties have observed and reported in this paper. A parallel attempt has taken towards making a comparative study between silica gel- aluminium composites and crystalline silica- aluminium composites, having same compositions, developed through same environment.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123369397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ananda Roy, Shreyoshi Chakraborty, Sourish Chatterjee, Sudipta Samui, C. Pani
{"title":"Performance Analysis of Hybrid Electro-Optic Architecture for Next Generation Network","authors":"Ananda Roy, Shreyoshi Chakraborty, Sourish Chatterjee, Sudipta Samui, C. Pani","doi":"10.1109/VLSIDCS47293.2020.9179895","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179895","url":null,"abstract":"In this paper our objective is to develop a hybrid electro-optic network model that can provide a significant impact for the next generation networks. Optical network provides very high bandwidth and minimum loss. But the optical switch suffers high latency (10 ms) at the time of switch reconfiguration and hence not suitable to handle bursty traffic efficiently. In our proposed model the traffics are classified into two categories: mouse traffic and elephant traffic. As per the traffic category the network path is selected. For mouse traffic electrical domain is used and for elephant traffic optical path is used. The detailed network architecture and its functions are elaborately described in this paper. The performance of the network is analyzed in NS2 environment and is focused on physical layer parameters in terms of cumulative network delay, consumed bandwidth and packet loss. A comparative analysis is done for the existing network model and our proposed model. Simulation results indicate that our proposed model has a considerable impact for future realistic network.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129163105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hemanga Banerjee, K. Sarkar, Papiya Debnath, Swarnil Roy, M. Chanda
{"title":"Design and Analysis of Double Gate Tunnel Field Effect Transistor using Charged Plasma","authors":"Hemanga Banerjee, K. Sarkar, Papiya Debnath, Swarnil Roy, M. Chanda","doi":"10.1109/VLSIDCS47293.2020.9179948","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179948","url":null,"abstract":"In this paper, we propose, illustrate and validate a design for a double-gate tunnel field effect transistor (TFET) in which dual-material gate has been incorporated, i.e., The semiconductor is un-doped and the source and drain regions are induced by the concept of charged plasma. The simulations for the device show significant improvement from single gate devices that may or may not use dual-material gates. Double Gate TFET has been designed using acceptable parameters, thus providing an on-current (ION) of 0.018 × 10−5 A and an off-current (IOFF) of the order of 10−17.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121091691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Implementation on EMBA Authentication models","authors":"Indrajit Das, Shalini Singh, Ria Das, S. Biswas, Sanjoy Roy, Sonali Gupta","doi":"10.1109/VLSIDCS47293.2020.9179890","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179890","url":null,"abstract":"Authentication systems in general have faced long-term security deficit despite convoluted sophistication within various systems for decades. Unfortunately, humans serve as the weakest prey for exploitation within any security chain. Unskillful and inefficient communications between systems and humans give rise to multiple vulnerabilities related to any security model. Additionally, the Passwords/Personal Identification Numbers (PIN’s) fail to provide idealistic security due to the lack of flawlessness in traditional password systems. On the contrary, since eye movements serve as a natural interaction modality, it was observed that the amalgamation of eye-tracking models enhances the overall security. In this context, the work presented in this paper leads to an extensive study and survey of many research works pertaining to existing Eye Movement authentication models. Besides, high-level overview of many conventional authentication methodologies have been discussed that can be launched in such EMBA models. Additionally, comparative analysis and performance metrics of different EMBA system is discussed. It was observed that the eye-password method has highest accuracy (97%) and eye motion based techniques has lowest accuracy (60%). Finally, an eye pupil tracking based authentication model has been proposed with accuracy of Eye detection, Eye open or closed detection and Eye pupil tracking detection are 98%, 92.51% and 96.25% respectively.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121318080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of Low Phase-Noise LC- VCO at 2.5GHz by Body-Bias Technique Using CMOS 180 nm Technology","authors":"Shrabanti Das, Swarup Dandapat, S. Chatterjee","doi":"10.1109/VLSIDCS47293.2020.9179857","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179857","url":null,"abstract":"Present work exhibits design of a Complementary MOS LC-VCO (Voltage Controlled Oscillator) along through body-biasing technique at 2.5 GHz. Body-biased technique has been introduced for reduction of power consumption and to obtain low Phase Noise (PN). Accordingly, body biasing technique leads to the lessening of supply voltage. An additional NMOS cross- coupled pairs in the traditional circuit of LC VCO have been incorporated to acquire better stability in oscillation frequency and to suppress the 1/f Noise. The projected VCO circuit has been implemented here with Cadence via Generic PDK 180nm technology. The simulation outcomes exhibit Phase Noise of −130.84 dBc/Hz at 1 MHz for 2.5 GHz working frequency. Observed power consumption of the proposed structure is 6.12 mW and Figure of Merit (FOM) is −236.14 dBc/Hz.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117221401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Maity, A. Pal, A. Saha, Bagish Kundu, P. Mukherjee, Rupak Bhattacharyya, S. Dutta, S. Adhikary
{"title":"Chaotic Advection Using Universal Motor Drive","authors":"A. Maity, A. Pal, A. Saha, Bagish Kundu, P. Mukherjee, Rupak Bhattacharyya, S. Dutta, S. Adhikary","doi":"10.1109/VLSIDCS47293.2020.9179917","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179917","url":null,"abstract":"Objective of this paper is to introduce a chaotic mixing system using PWM chopper controlled universal motor drive for the purpose of better mixing. In particular, the drive system is being operated with chaotic speed without using any chaotic signal as speed reference and by only proper tuning of filter inductance. This study has basically investigated dynamic behavior of the PWM controlled system by performing computer simulations on a 1/2 HP universal motor. In particular, simulation results validate the strategy of designing the filter circuit inductance of the power converter of the drive system for mixing applications.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126382998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}