Design of Low Phase-Noise LC- VCO at 2.5GHz by Body-Bias Technique Using CMOS 180 nm Technology

Shrabanti Das, Swarup Dandapat, S. Chatterjee
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Abstract

Present work exhibits design of a Complementary MOS LC-VCO (Voltage Controlled Oscillator) along through body-biasing technique at 2.5 GHz. Body-biased technique has been introduced for reduction of power consumption and to obtain low Phase Noise (PN). Accordingly, body biasing technique leads to the lessening of supply voltage. An additional NMOS cross- coupled pairs in the traditional circuit of LC VCO have been incorporated to acquire better stability in oscillation frequency and to suppress the 1/f Noise. The projected VCO circuit has been implemented here with Cadence via Generic PDK 180nm technology. The simulation outcomes exhibit Phase Noise of −130.84 dBc/Hz at 1 MHz for 2.5 GHz working frequency. Observed power consumption of the proposed structure is 6.12 mW and Figure of Merit (FOM) is −236.14 dBc/Hz.
基于CMOS 180纳米技术的体偏技术设计2.5GHz低相位噪声LC- VCO
本研究展示了一种基于体偏置技术的互补MOS LC-VCO(电压控制振荡器)在2.5 GHz下的设计。为了降低功耗和获得低相位噪声(PN),引入了体偏技术。因此,体偏置技术导致了电源电压的降低。在LC压控振荡器的传统电路中增加了NMOS交叉耦合对,以获得更好的振荡频率稳定性和抑制1/f噪声。预计的压控振荡器电路已在这里通过通用PDK 180nm技术与Cadence实现。仿真结果显示,在2.5 GHz工作频率下,1 MHz时相位噪声为−130.84 dBc/Hz。该结构的功耗为6.12 mW, FOM值为−236.14 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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