Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,最新文献_第3页

Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility 通过迁移增强外延减少砷化镓中Be的扩散，以及热处理对电活化和迁移率的影响

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79832

B. Tadayon, S. Tadayon, W. Schaff, M. Spencer, G. Harris, J. Griffin, P. Tasker, C. Wood, L. Eastman

{"title":"Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility","authors":"B. Tadayon, S. Tadayon, W. Schaff, M. Spencer, G. Harris, J. Griffin, P. Tasker, C. Wood, L. Eastman","doi":"10.1109/CORNEL.1989.79832","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79832","url":null,"abstract":"It has been demonstrated that the migration-enhanced epitaxy (MEE) method can be used to grow high-quality GaAs at low substrate temperature. Annealed MEE layers are shown to have hole concentration mobility, surface morphology, and optical characteristics comparable to those of MBE (molecular beam epitaxy) layers. Because of the reduction of Be diffusion in annealed MEE layers, relative to MBE layers, the MEE method can replace the conventional MBE method for device applications which require high hole concentration with small Be diffusion. As the anneal time increases, the hole sheet density increases and reaches some final value. A higher anneal temperature results in high electrical activation in a shorter anneal time. For annealing below 1000 degrees C, the electrical activation monotonically increases as the anneal temperature increases. For 15-s anneal time, the hole sheet and the mobility peak at the anneal temperatures of 1000 and 900 degrees C, respectively.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131045882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An evaluation of Si and SiGe base bipolar transistors for high frequency and high speed applications-basic transport and design 用于高频和高速应用的Si和SiGe基极双极晶体管的评估-基本传输和设计

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79829

J. Hinckley, V. Sankaran, J. Singh, S. Tiwari

引用次数: 1

Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise tetrahertz receiver applications 用于低噪声四赫兹接收机的超小型GaAs肖特基势垒二极管的设计与制造

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79857

W. Peatman, T. Crowe

{"title":"Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise tetrahertz receiver applications","authors":"W. Peatman, T. Crowe","doi":"10.1109/CORNEL.1989.79857","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79857","url":null,"abstract":"The optimization of GaAs Schottky barrier mixer diodes for use in heterodyne receivers in the frequency range from 1-3 THz is investigated. The principal design rules are: (1) the substrate doping must be as high as possible to minimize series resistance; (2) the diode cutoff frequency must be increased as much as possible, which requires a small anode diameter and a higher epilayer doping density than has previously been used; and (3) the diode's RF impedance must be made to match the impedance of the corner cube antenna, which requires a low junction capacitance. To achieve these goals, a nominal epilayer doping density of 5*10/sup 17/ cm/sup -3/, an anode diameter of 0.5 mu m, and the most highly doped substrate available (4.5*10/sup 18/ cm/sup -3/) were used. The diodes were fabricated with UV lithography and reactive ion etching. The resulting figure-of-merit cutoff frequency (10.6 THz) and zero-bias junction capacitance (0.4-0.5 fF) are both state of the art. The diodes have been RF-tested at 1.5 THz and yielded significant improvements in receiver sensitivity and reduced LO (local oscillator) power requirements.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"368 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115658590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A new coplanar waveguide vector network analyzer for on-wafer measurements 一种用于片上测量的新型共面波导矢量网络分析仪

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79836

J. Bellantoni, R. Compton

引用次数: 1

Quantum-well resonant-tunneling transistors 量子阱共振隧穿晶体管

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79842

A. Seabaugh, W. Frensley, Y. Kao, J. Randall, M. Reed

引用次数: 8

Monolithically integrated GaAs-based and InP-based front-end photoreceivers 基于gaas和inp的单片集成前端光电接收器

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79853

W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati

引用次数: 2

A/D converter using InGaAs/InAlAs resonant-tunneling diodes 采用InGaAs/InAlAs谐振隧道二极管的A/D转换器

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79843

Tsai-Hao Kuo, H.C. Lin, R. Potter, D. Shupe

引用次数: 13

A pseudomorphic GaAs/GaInAs/AlGaAs SISFET

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79824

P. Schmidt, E. Barbier, P. Collot, D. Pons

{"title":"A pseudomorphic GaAs/GaInAs/AlGaAs SISFET","authors":"P. Schmidt, E. Barbier, P. Collot, D. Pons","doi":"10.1109/CORNEL.1989.79824","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79824","url":null,"abstract":"The authors report a pseudomorphic semiconductor-insulator-semiconductor field-effect transistor (PM-SISFET) that uses a thin layer of undoped GaInAs instead of GaAs as the channel-forming layer. The device consists of an undoped AlGaAs barrier layer, a heavily doped n-type GaAs gate, and an upper GaInAs contact layer. With this structure, the device has a naturally negative threshold voltage. The structures were grown by molecular beam epitaxy. The devices were fabricated using, as for conventional GaAs SISFETs, self-aligned ion implantation and rapid thermal annealing (RTA). High-resolution photoluminescence spectra at 4.2 K for both the as-grown layer and after RTA have a FWHM (full width at half-maximum) of 3.1 MeV for a 120-AA-thick GaInAs channel layer with an In content of about 12%. These measurements indicate that no structural degradation of the strained layer occurred during annealing. To compare performance, the authors also grew and processed conventional GaAs/AlGaAs/n/sup +/-GaAs SISFETs. At 300 K, the 1- mu m-gate-length devices showed transconductances and drain currents in excess of 270 mS/mm and 250 mA/mm, respectively, for PM-SISFETs compared to 240 mS/mm and 200 mA/mm, respectively, for similar conventional SISFETs.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"07 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122720778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes 多势垒共振隧道二极管中散射过程引起峰谷比退化的理论分析

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79844

H. Mizuta, T. Tanoue, S. Takahashi

{"title":"Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes","authors":"H. Mizuta, T. Tanoue, S. Takahashi","doi":"10.1109/CORNEL.1989.79844","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79844","url":null,"abstract":"A theoretical approach to resonant tunneling phenomena in multibarrier heterostructures is developed and successfully applied to the GaAs/AlGaAs triple-well resonant-tunneling diode. By introducing both the Hartree self-consistent field model and the scattering broadening model in the conventional formula, the mechanism for the P/V (peak/valley) current ratio degradation is quantitatively analyzed. The calculated results reveal that electron buildup in the first well shifts an injection level, resulting in a large decrease in second peak current with decreasing temperature. The calculated temperature dependence is in good agreement with experimental data. It is further found that the ratio of the scattering broadening Gamma /sub s/ to the intrinsic broadening Gamma /sub i/ is the main factor which determines the degradation of the P/V current ratio. As this ratio increases and exceeds unity, the P/V ratio steeply decreases. In a comparison of the calculations and experimental data, Gamma /sub s/ is estimated to be approximately 2.5 MeV, which agrees well with the value roughly evaluated from the momentum relaxation time due to LO-phonon scattering.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128795227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

An improved small signal QWITT diode model including quantum well carrier lifetime effects 考虑量子阱载流子寿命效应的改进小信号QWITT二极管模型

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79847

D. Whitson, M. Paulus, C. E. Stutz, E. Koenig, R. Neidhard, E. Davis

{"title":"An improved small signal QWITT diode model including quantum well carrier lifetime effects","authors":"D. Whitson, M. Paulus, C. E. Stutz, E. Koenig, R. Neidhard, E. Davis","doi":"10.1109/CORNEL.1989.79847","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79847","url":null,"abstract":"The authors present a novel small-signal model for the QWITT (quantum-well injection transit time) diode, which combines a recently proposed QWD (quantum-well diode) equivalent circuit with the distributed impedance model for the drift region. Both the QWD model and the QWITT model consider the effect of carrier delays in the quasi-bound state and drift region. To test QWD and QWITT models, the authors grew three different 5.1-nm-AlGaAs/5.1-nm-GaAs/5.1-nm-AlGaAs double-barrier structures by molecular beam epitaxy with different anode drift layer lengths. They obtained experimental impedance parameters for the fabricated diodes using an HP 8510B Automated Network Analyzer with cascade probes and fit the QWD and QWITT equivalent circuits to the data using analytical and numerical techniques. It is shown that QWDs and QWITTs are essentially the same device and may be modeled using the QWD or QWITT equivalent circuit with equal accuracy. The QWITT model is found to be preferable to the QWD model as a design tool because the drift region is treated separately.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1