Quantum-well resonant-tunneling transistors

Abstract

The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed.<>