Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,最新文献

FETs with superconducting channels 具有超导通道的场效应管

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79816

A. Kleinsasser, T. Jackson

引用次数: 0

Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs渐变折射率分离约束异质结构单量子阱激光器的光学和微波性能

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79851

S.D. Offsey, W. Schaff, P. Tasker, W. D. Braddock, L. Eastman

{"title":"Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers","authors":"S.D. Offsey, W. Schaff, P. Tasker, W. D. Braddock, L. Eastman","doi":"10.1109/CORNEL.1989.79851","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79851","url":null,"abstract":"The authors have fabricated InGaAs-GaAs-AlGaAs strained-layer graded-index separate-confinement-heterostructure (GRINSCH) quantum-well lasers grown by molecular beam epitaxy (MBE). Use of optimized growth conditions resulted in low-threshold performance. The lasers emit at a wavelength of 1.03 mu m and have threshold currents of 12 mA for 3- mu m*400- mu m devices and threshold current densities of 168 A/cm/sup 2/ for 150- mu m*800- mu m devices. They emit at longer wavelengths and have lower threshold currents than previously reported strained-layer lasers grown by MBE and have threshold currents below those of strained-layer lasers grown by OMVPE (organometallic vapor-phase epitaxy). Measurements of threshold current and microwave modulation response have been performed on strained-layer InGaAs and unstrained GaAs GRINSCH SQW (single-quantum-well) lasers with identical cladding and graded regions grown by molecular beam epitaxy. They confirm the lower threshold currents and higher modulation bandwidths that have been theoretically predicted for strained-layer lasers.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122357383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics 基于精确电荷控制特性的二维电子气场效应晶体管噪声建模

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79827

Y. Ando, T. Itoh

引用次数: 3

High power efficiency X-band GaAlAs/GaAs HBT 高功率效率x波段GaAlAs/GaAs HBT

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79831

N.L. Wang, N. Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, P. Asbeck

引用次数: 9

The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers 应变对GaInAs/GaAs和GaAs/GaInAlAs应变层量子阱激光器小信号增益和激光阈值的影响

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79854

G. Feak, D. Nichols, J. Singh, J. Loehr, J. Pamulapati, P. Bhattacharya, D. Biswas

{"title":"The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers","authors":"G. Feak, D. Nichols, J. Singh, J. Loehr, J. Pamulapati, P. Bhattacharya, D. Biswas","doi":"10.1109/CORNEL.1989.79854","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79854","url":null,"abstract":"Results of calculations on how band-structure changes introduced by strain affect the gain spectra in multi-quantum-well (MQW) lasers are presented. Reduction of threshold injection as well as increased TE mode emission occurs for the compressive-strain case. In tensile strain the thresholds for TE and TM modes approach each other. Experimental studies on the compressive-strain laser structures show that the spontaneous and lasing spectra shift to longer wavelengths, the threshold current density is reduced, and a more rapid rise of gain with increased injection occurs. The output spectrum shifted from the 959-962 nm range for the GaInAs devices with 20% In to the 1033.5-1041.0-nm range for devices with 30% In. The threshold current density decreased with increasing strain, as expected from the theory. The modal gain of the devices and the peak modal gain were shown to rise very quickly with increased injection. This qualitatively agrees with the expected decrease in hole density of states brought about by strain, which could cause the hole states to be more rapidly filled and result in a more rapid rise in the material gain.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134240056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Simulation of the variation and sensitivity of GaAs MESFET large signal figures-of-merit due to process, material, parasitic, and bias parameters GaAs MESFET大信号优值随工艺、材料、寄生和偏置参数的变化和灵敏度的模拟

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79839

D. Stoneking, R. Trew, L. Mukundan

{"title":"Simulation of the variation and sensitivity of GaAs MESFET large signal figures-of-merit due to process, material, parasitic, and bias parameters","authors":"D. Stoneking, R. Trew, L. Mukundan","doi":"10.1109/CORNEL.1989.79839","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79839","url":null,"abstract":"A simulator for calculating MESFET large-signal figures of merit and their sensitivities with respect to various device design, material and operational parameters has been developed. A study of an ion-implanted device with a 0.42- mu m gate length and 1.0-mm gate width is presented. The effects on maximum power-added efficiency, output power at the maximum power-added efficiency, and output power at 1-dB gain compression due to variation in implant peak doping density, implant range, implant straggle, gate length, gate width, and gate-drain breakdown voltage are presented. The data indicate that the device performance is most sensitive to changes in V/sub gdbd/ for values of V/sub gdbd/ less than 20 V. However, performance sensitivity goes to zero for V/sub gdbd/ greater than 20 V. RF performance is also sensitive to changes in the channel implant parameters. However, the simulated sensitivities are less than those for V/sub gdbd/. Over fairly broad ranges, device performance is less sensitive to changes in L/sub g/ and W/sub g/ but degrades rapidly at the extrema.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131090361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger's equation 基于薛定谔方程时变解的高频谐振隧穿结构分析

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79845

I. Saadat, J.P. Krusius

引用次数: 0

Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs 离子注入与异质外延混合技术:离子注入In/sub x/Ga/sub 1-x/As/GaAs mesfet

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79826

G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito

引用次数: 0

Experimental verification of the contiguous domain oscillator concept 连续域振荡器概念的实验验证

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79848

J. Cooper, Y. Yin, M. Balzan, A.E. Geissberger

引用次数: 0

Extension of high f/sub T/ operation bias range for an AlInAs/InGaAs HBT 扩展了AlInAs/InGaAs HBT的高f/sub /工作偏置范围

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79833

S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo

引用次数: 0