离子注入与异质外延混合技术:离子注入In/sub x/Ga/sub 1-x/As/GaAs mesfet

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79826

G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito

{"title":"离子注入与异质外延混合技术:离子注入In/sub x/Ga/sub 1-x/As/GaAs mesfet","authors":"G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito","doi":"10.1109/CORNEL.1989.79826","DOIUrl":null,"url":null,"abstract":"State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"53 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs\",\"authors\":\"G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito\",\"doi\":\"10.1109/CORNEL.1989.79826\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"53 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79826\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用0.5 μ m栅极In/sub 0.1/Ga/sub 0.9/As和渐变In/sub x/Ga/sub 1-x/As mesfet分别实现了55 GHz和61 GHz的f/sub t/ s的最先进的FET性能。描述了材料的生长和器件的制造，并报道了器件的特性。与In/sub 0.1/Ga/sub 0.9/As MESFET相比，渐变材料MESFET具有更好的肖特基栅极，这对器件性能至关重要。这种新颖的InGaAs MESFET适用于基于InGaAs的电路，除其他应用外，还适用于长波长光纤通信。

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Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs

State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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