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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,最新文献

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RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m 栅极长度小至0.25 μ m的p沟道Al/sub 0.5/Ga/sub 0.5/As/GaAs modfet的射频和直流特性
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79859
H. Park, P. Mandeville, R. Saito, P. Tasker, W. Schaff, L. Eastman
{"title":"RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m","authors":"H. Park, P. Mandeville, R. Saito, P. Tasker, W. Schaff, L. Eastman","doi":"10.1109/CORNEL.1989.79859","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79859","url":null,"abstract":"The authors have fabricated Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate length as small as 0.25 mu m and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7*10/sup 6/ cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"425 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133166004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimization of the design of the heterojunction vertical field effect transistor using a two-dimensional self-consistent Monte Carlo method 利用二维自洽蒙特卡罗方法优化异质结垂直场效应晶体管的设计
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79840
S. Weinzierl, J. Krusius
{"title":"Optimization of the design of the heterojunction vertical field effect transistor using a two-dimensional self-consistent Monte Carlo method","authors":"S. Weinzierl, J. Krusius","doi":"10.1109/CORNEL.1989.79840","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79840","url":null,"abstract":"Extensive Monte Carlo simulations of both steady-state and transient operation of a heterojunction vertical field-effect transistor (VFET) show that the discrepancy between measured and predicted cutoff frequencies for the device has two causes. First, experiments with lateral gate placement show that fabricated devices have not been optimized for high-speed performance. In addition, it is shown that because the operation of the devices in this study was governed by hot carrier transport and multidimensional space charge effects, previous predictions which did not take these phenomena into account are unrealistic. The structure and characteristics of the device used to verify the accuracy of the simulation method are described. A simple conceptual model which considers both local current continuity and space charges is presented for understanding the Monte Carlo results.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134183055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High voltage operation in class B GaAs X-band power MESFETs B类GaAs x波段功率mesfet的高压工作
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI: 10.1109/CORNEL.1989.79838
S. Sriram, R. C. Clarke, R. Messham, T.J. Smith, M. Driver
{"title":"High voltage operation in class B GaAs X-band power MESFETs","authors":"S. Sriram, R. C. Clarke, R. Messham, T.J. Smith, M. Driver","doi":"10.1109/CORNEL.1989.79838","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79838","url":null,"abstract":"Surface trapping effects are shown to affect adversely the RF power performance of high-voltage GaAs MESFETs and a model is presented to explain them. It is shown that the adverse effects of surface trapping can be minimized by: (1) including an undoped layer near the surface, (2) reducing the distance between the gate and n/sup +/ ledge, and (3) making the gate recess narrower than the gate. Devices fabricated with such a structure showed excellent RF power performance at 10 GHz: P/sub 0/=678 mW/mm, G /sub A/=6.8 dB, and eta /sub PA/=51.1% at a drain-bias voltage of 12 V. The design of devices to minimize surface-trapping effects is also expected to lead to self-passivating devices that will be inherently more reliable and show less 1/f noise. The high-voltage, high-efficiency devices described here will be applicable in airborne phased array radar systems where power supply requirements and heat dissipation problems limit system performance.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124362126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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