B类GaAs x波段功率mesfet的高压工作

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79838

S. Sriram, R. C. Clarke, R. Messham, T.J. Smith, M. Driver

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引用次数: 12

摘要

表面捕获效应对高压GaAs mesfet的射频功率性能有不利影响，并提出了一个模型来解释它们。结果表明，通过以下方法可以最大限度地减少表面捕获的不利影响:(1)在表面附近加入未掺杂层;(2)减小栅极与n/sup +/壁架之间的距离;(3)使栅极凹槽比栅极窄。在漏偏置电压为12 V时，采用该结构制备的器件在10 GHz频段表现出优异的射频功率性能:P/sub 0/=678 mW/mm, G /sub a /=6.8 dB, eta /sub PA/=51.1%。最小化表面捕获效应的器件设计也有望导致自钝化器件，其本质上更可靠，显示更少的1/f噪声。这里描述的高压、高效率器件将适用于机载相控阵雷达系统，其中电源要求和散热问题限制了系统性能。

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High voltage operation in class B GaAs X-band power MESFETs

Surface trapping effects are shown to affect adversely the RF power performance of high-voltage GaAs MESFETs and a model is presented to explain them. It is shown that the adverse effects of surface trapping can be minimized by: (1) including an undoped layer near the surface, (2) reducing the distance between the gate and n/sup +/ ledge, and (3) making the gate recess narrower than the gate. Devices fabricated with such a structure showed excellent RF power performance at 10 GHz: P/sub 0/=678 mW/mm, G /sub A/=6.8 dB, and eta /sub PA/=51.1% at a drain-bias voltage of 12 V. The design of devices to minimize surface-trapping effects is also expected to lead to self-passivating devices that will be inherently more reliable and show less 1/f noise. The high-voltage, high-efficiency devices described here will be applicable in airborne phased array radar systems where power supply requirements and heat dissipation problems limit system performance.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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