RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m

Abstract

The authors have fabricated Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate length as small as 0.25 mu m and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7*10/sup 6/ cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits.<>